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Wolfspeed N-Channel MOSFET 1 kV, 22 A, Enhancement Mode, 8-Pin TO-263 Package C3M0120100J

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Wolfspeed N-Channel MOSFET 1 kV, 22 A, Enhancement Mode, 8-Pin TO-263 Package C3M0120100J

Name: Wolfspeed N-Channel MOSFET 1 kV, 22 A, Enhancement Mode, 8-Pin TO-263 Package C3M0120100J
Brand: Wolfspeed
SKU: 147590
Price: 16.24 USD
Availability: InStock

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Category MOSFET Brand Wolfspeed Condition New

Specifications

Country of Origin	India
Brand	Wolfspeed
Height	4.32mm
Length	10.23mm
Model	C3M0120100J
Width	9.12mm
Mount Type	Surface
Series	C3M
Maximum Operating Temperature	150°C
Package Type	TO-263
Minimum Operating Temperature	-55°C
Pin Count	8
Channel Type	N
Maximum Continuous Drain Current Id	22A
Maximum Drain Source Voltage Vds	1kV
Maximum Drain Source Resistance Rds	170mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	83W
Typical Gate Charge Qg @ Vgs	21.5nC
Maximum Gate Source Voltage Vgs	+15, +9V
Forward Voltage Vf	4.8V

Key Features

Supports a maximum continuous drain current of 22 amperes.
Operates with a maximum drain-source voltage of 1 kilovolt.
Features low drain-source resistance of 170 milliohms for efficient conduction.
Capable of dissipating up to 83 watts of power safely.
High operating temperature range from -55°C to 150°C.
Includes fast intrinsic diode with low reverse recovery charge for optimized switching.
Typical gate charge of 21.5 nanocoulombs at specified gate voltage.
Equipped with an 8-pin surface-mounted TO-263 package for easy integration.

Product Description

Wolfspeed C3M0120100J is a highly optimized N-Channel MOSFET semiconductor device operating at 1 kilovolt and 22 amperes maximum current. Packaged in an 8-pin TO-263 surface-mount form factor, it is engineered to meet the demanding power design challenges of modern industrial and automotive applications, including electric vehicle charging systems and three-phase industrial power supplies.

The device features a low drain-source resistance of 170 milliohms and a maximum power dissipation capability of 83 watts, allowing for efficient conduction and thermal management during operation. It supports a wide temperature range from -55°C minimum to 150°C maximum operating temperature, making it suitable for demanding environments.

Its architecture includes a high-speed switching intrinsic diode with low reverse recovery charge (Qrr), enabling reduced switching losses and enhanced efficiency. The typical gate charge is 21.5 nanocoulombs at the specified gate voltage, ensuring fast and reliable gate control.

Additional important specifications include a maximum gate-source voltage of +15V and +9V, and a forward voltage of 4.8 volts. The compact physical dimensions are 10.23 mm in length, 9.12 mm in width, and 4.32 mm in height, optimized for surface mounting.

Maximum continuous drain current: 22 A. Maximum drain-source voltage: 1 kV. TO-263 package, 8-pin surface mount. Drain-source resistance: 170 mΩ. Max power dissipation: 83 W. Operating temperature range: -55°C to 150°C. Typical gate charge: 21.5 nC at Vgs.

High-speed switching and low output capacitance. Optimized for electric vehicle charging and industrial power supplies. Easy parallel connection and simple drive requirements.

This Wolfspeed MOSFET is ideal for industrial, automotive, power management, and electronic control system applications, delivering reliable performance with high blocking voltage and low conduction losses.

Explore other high-performance semiconductors and MOSFETs in the Electronics & Electricals category on EnvMart.