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DiodesZetex High Voltage NPN Bipolar Transistor 500mA 300V 3-Pin SOT-23 FMMT497TA

Category Bipolar Transistors Brand DiodesZetex Condition New

Specifications

Country of Origin China
Brand DiodesZetex
Height 1.12mm
Length 3.04mm
Model FMMT497TA
Width 1.4mm
Mount Type Surface
Series FMMT497
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -55°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo 300V
Minimum DC Current Gain hFE 20
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 5V
Maximum Collector Base Voltage VCBO 300V
Maximum Power Dissipation Pd 500mW
Maximum DC Collector Current Idc 500mA
Transistor Configuration Single
Maximum Transition Frequency ft 75MHz

Key Features

  • This is a high voltage NPN transistor suitable for amplification and switching applications.
  • The transistor has a maximum power dissipation of 500mW ensuring reliable performance.
  • It operates in temperatures ranging from -55°C to 150°C for wide environmental compatibility.
  • Featuring a minimum DC current gain of 20 and a maximum transition frequency of 75MHz.
  • Compact dimensions of 3.04mm length, 1.4mm width, and 1.12mm height allow for dense circuit integration.
  • Designed for surface mount technology with a robust SOT-23 package type.
  • Ideal for use in industrial, electronic, and automotive semiconductor applications.
  • Manufactured in China with new product condition assurance.

Product Description

DiodesZetex FMMT497TA is a high voltage NPN bipolar transistor designed for amplification and switching in various electronic applications. It supports a maximum DC collector current of 500mA and withstands collector-emitter voltages of up to 300V, making it suitable for robust industrial and commercial use.

The transistor is housed in a space-saving 3-pin SOT-23 surface mount package, facilitating high-density PCB designs and automated manufacturing processes. It delivers consistent performance with a maximum power dissipation rating of 500mW and operates reliably across a wide temperature range from -55°C to 150°C.

Its minimum DC current gain (hFE) of 20 and a maximum transition frequency of 75MHz ensure effective signal amplification and switching speed for various applications, including power management, signal processing, and automotive electronics.

The precise dimensions of 3.04mm length, 1.4mm width, and 1.12mm height make this transistor well-suited for compact electronic circuits where space is at a premium.

The transistor configuration is single and specifically optimized for NPN polarity, offering a maximum collector base voltage of 300V and a maximum emitter base voltage of 5V, enhancing device durability and operational stability.

This product complies with standard manufacturing quality but has no specific certifications or automotive standards. The country of origin is China, and the product condition is new, ensuring reliability and consistency in performance.

Ideal for use in electronic components manufacturing, power and connector assemblies, and semiconductor discrete applications within industrial, manufacturing, and automotive sectors. The transistor's compact size and robust electrical characteristics provide versatility across many PCB and electronic design scenarios.

This is a high voltage NPN transistor suitable for amplification and switching applications. The transistor has a maximum power dissipation of 500mW ensuring reliable performance. It operates in temperatures ranging from -55°C to 150°C for wide environmental compatibility.

Featuring a minimum DC current gain of 20 and a maximum transition frequency of 75MHz. Compact dimensions of 3.04mm length, 1.4mm width, and 1.12mm height allow for dense circuit integration. Designed for surface mount technology with a robust SOT-23 package type.

Ideal for use in industrial, electronic, and automotive semiconductor applications. Manufactured in China with new product condition assurance. Explore the full range of semiconductor Bipolar Transistors at EnvMart for reliable, high-quality electronic components tailored to varied industry needs.

DiodesZetex High Voltage NPN Bipolar Transistor 500mA 300V 3-Pin SOT-23 FMMT497TA
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Frequently Asked Questions

The maximum collector-emitter voltage (Vceo) for this model is 300V.

It can handle a maximum DC collector current of 500mA.

The maximum power dissipation rating is 500mW.

This transistor operates within a temperature range of -55°C to 150°C.

The minimum DC current gain (hFE) is 20.

It has a maximum transition frequency of 75MHz.

The dimensions are 3.04mm in length, 1.4mm in width, and 1.12mm in height.

It is housed in a 3-pin SOT-23 surface mount package.

The maximum emitter-base voltage (VEBO) is 5V.

The configuration of this transistor is single, optimized for NPN polarity.

This transistor is manufactured in China.

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