DiodesZetex High Voltage NPN Transistor 500 mA Collector Current, 300 V Collector-Emitter Voltage, 3-Pin SOT-23 FMMT497TA

DiodesZetex FMMT497TA is a high voltage NPN bipolar transistor designed for surface mount applications. Packaged in a compact 3-pin SOT-23 format, this transistor supports a maximum DC collector current of 500 mA and maximum collector-emitter voltage of 300 V, making it suitable for high voltage switching and amplification tasks in various industrial electronic circuits.

Featuring a maximum power dissipation of 500 mW, the FMMT497TA transistor manages thermal loads effectively within operating temperatures ranging from -55°C to 150°C. This wide temperature range allows its deployment in rugged industrial, automotive, and commercial electronics that require reliable performance under varying environmental conditions.

With a maximum transition frequency of 75 MHz, the transistor meets the demands of moderate frequency analog and switching circuits. The device's single transistor configuration and NPN polarity make it a versatile semiconductor component in discrete transistor designs.

The transistor package dimensions measure 3.04 mm in length, 1.40 mm in width, and 1.12 mm in height, optimized for surface mounting on printed circuit boards (PCBs), facilitating automated assembly and compact device design.

Designed for high voltage switching and amplification applications. Collector current of 500 mA maximum supports robust electronic loads. Compact 3-pin SOT-23 surface mount package compatible with modern PCB manufacturing.

500 mW maximum power dissipation ensures stability under thermal load. Wide temperature tolerance from -55°C to 150°C for diverse environments. Maximum transition frequency of 75 MHz suitable for moderate frequency circuits.

NPN polarity with single transistor configuration provides versatile usage. Manufactured in China with adherence to environmental safety standards.

The FMMT497TA transistor is ideal for industrial, automotive, and commercial electronics requiring dependable high voltage bipolar transistor solutions. It enables efficient amplification and switching in discrete semiconductor circuits, embedded systems, and power management.

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