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Infineon N-Channel IGBT 53 A 600 V 3-Pin TO-247 Through Hole IGW30N60TPXKSA1
Specifications
| Country of Origin | China |
|---|---|
| Brand | Infineon |
| Model | IGW30N60TPXKSA1 |
| Mount Type | Through Hole |
| Series | TrenchStop |
| Energy Rating | 1.13mJ |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -40°C |
| Pin Count | 3 |
| Maximum Continuous Collector Current Ic | 53A |
| Maximum Collector Emitter Voltage Vceo | 600V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.8V |
| Channel Type | N |
| Maximum Power Dissipation Pd | 200W |
| Maximum Gate Emitter Voltage VGEO | 20 V |
Key Features
- Features TrenchStop technology ensuring low saturation voltage and efficient switching.
- Maximum power dissipation of 200 W suited for high power applications.
- Operates between -40°C to 175°C providing a wide temperature range.
- Fast switching speed of 30 kHz enhances performance in power electronics.
- Includes a maximum gate-emitter voltage rating of 20 V for stable control.
- Constructed with an integrated fast recovery anti-parallel diode reducing switching losses.
- High energy rating of 1.13 mJ supports robustness in demanding conditions.
- Ideal for industrial, construction, and power conversion applications.
Product Description
Infineon IGW30N60TPXKSA1 is an N-Channel Insulated Gate Bipolar Transistor (IGBT) designed for high efficiency and fast switching in power electronics applications. Rated for a maximum continuous collector current of 53 A and a collector-emitter voltage of 600 V, it is housed in a 3-pin TO-247 through hole package enhancing durability and ease of mounting.
This transistor features TrenchStop technology, which helps to reduce the saturation voltage and turn-off losses, thus improving overall device performance. The device is capable of operating reliably in a broad temperature range from -40°C to 175°C, providing versatility for use in harsh environments.
The IGW30N60TPXKSA1 incorporates a maximum gate-emitter voltage of 20 V and supports switching speeds up to 30 kHz, making it suitable for industrial machines, HVAC systems, manufacturing power modules, and other demanding applications. The built-in fast recovery anti-parallel diode minimizes switching losses further improving energy efficiency.
The device's energy rating of 1.13 mJ and maximum power dissipation of 200 W affirm its robustness and reliability in continuous operation. Its through hole mount type and TO-247 package make it compatible with standard PCB assembly processes.
This Infineon IGBT transistor originates from China and is provided in new condition, ensuring quality and performance consistency for commercial and industrial buyers. Features TrenchStop technology ensuring low saturation voltage and efficient switching.
Maximum power dissipation of 200 W suited for high power applications. Operates between -40°C to 175°C providing a wide temperature range. Fast switching speed of 30 kHz enhances performance in power electronics. Includes a maximum gate-emitter voltage rating of 20 V for stable control.
Constructed with an integrated fast recovery anti-parallel diode reducing switching losses. High energy rating of 1.13 mJ supports robustness in demanding conditions. Ideal for industrial, construction, and power conversion applications.
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Frequently Asked Questions
The maximum continuous collector current for the IGW30N60TPXKSA1 is 53 A.
This model has a maximum collector-emitter voltage rating of 600 V.
The maximum power dissipation for the IGW30N60TPXKSA1 is 200 W, making it suitable for high power applications.
It operates reliably between -40°C to 175°C, allowing for use in harsh environments.
The IGW30N60TPXKSA1 supports a fast switching speed of up to 30 kHz.
This model is housed in a 3-pin TO-247 through hole package, which enhances durability and ease of mounting.
The maximum gate-emitter voltage rating for this IGBT is 20 V, ensuring stable control.
It features TrenchStop technology, which helps reduce saturation voltage and turn-off losses, improving overall performance.
The energy rating for the IGW30N60TPXKSA1 is 1.13 mJ, supporting robustness in demanding conditions.
This model is ideal for industrial machines, HVAC systems, manufacturing power modules, and other demanding applications.
The maximum collector-emitter saturation voltage for this IGBT is 1.8 V.
The IGW30N60TPXKSA1 is manufactured in China.
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