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| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 4.57mm |
| Length | 10.36mm |
| Model | IKP15N65F5XKSA1 |
| Width | 15.95mm |
| Mount Type | Through Hole |
| Series | TrenchStop |
| Energy Rating | 0.17mJ |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -40°C |
| Standards/Approvals | RoHS |
| Pin Count | 3 |
| Maximum Continuous Collector Current Ic | 30A |
| Maximum Collector Emitter Voltage Vceo | 650V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.1V |
| Channel Type | N |
| Maximum Power Dissipation Pd | 105W |
| Maximum Gate Emitter Voltage VGEO | 20 V |
The Infineon IKP15N65F5XKSA1 model is a high-performance N-Channel Insulated Gate Bipolar Transistor (IGBT) that incorporates TrenchStop technology to deliver fast switching speeds and energy-efficient operation. Rated for a maximum continuous collector current of 30 A and a collector-emitter voltage rating of 650 V, this device is optimized for various power electronics and industrial switching applications.
The device is housed in a TO-220 package with three pins designed for through-hole mounting, providing excellent thermal dissipation capabilities for power handling up to 105 W. It features a maximum gate-emitter voltage of 20 V, ensuring robust gate control without degradation.
With a maximum operating temperature of 175°C and minimum operating temperature of -40°C, the IKP15N65F5XKSA1 is suitable for demanding industrial environments. Its low collector-emitter saturation voltage (VceSAT) of 2.1 V reduces conduction losses, improving overall efficiency in high-current switching circuits.
The compact physical dimensions of length 10.36 mm, width 15.95 mm, and height 4.57 mm allow for flexible PCB layout and integration. The transistor is compliant with RoHS standards, guaranteeing minimal environmental impact and suitability for electronics manufacturing.
This IGBT series combines the ease of MOSFET gate drive with the current and voltage handling capabilities of bipolar transistors, making it ideal for applications such as motor drives, power supplies, and industrial automation systems.
This IGBT features TrenchStop technology for low saturation voltage and reduced switching losses. The device comes in a TO-220 package with three pins and through-hole mounting. It supports a maximum power dissipation of 105 W for robust performance.
The maximum gate-emitter voltage rating is 20 V and it operates reliably from -40°C up to 175°C. The transistor includes a low VCEsat of 2.1 V, ensuring efficient conduction. Its compact dimensions measure approximately 10.36 mm length, 15.95 mm width, and 4.57 mm height.
RoHS compliant and suitable for industrial and power electronics applications.
Ideal for applications in industrial control, power electronics, and energy-efficient motor drives, the Infineon IKP15N65F5XKSA1 provides reliable and efficient switching performance under demanding conditions.
Explore our extensive semiconductor and IGBT module selection at EnvMart for related industrial-grade components and devices.
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