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onsemi PNP Power Transistor, Maximum DC Collector Current -8 A, Maximum Collector Emitter Voltage -250 V, 3-Pin MJE15033G
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 30.02mm |
| Length | 10.53mm |
| Model | MJE15033G |
| Width | 4.83mm |
| Mount Type | Through Hole |
| Series | MJE15033 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -65°C |
| Pin Count | 3 |
| Maximum Collector Emitter Voltage Vceo | -250V |
| Minimum DC Current Gain hFE | 10 |
| Transistor Polarity | PNP |
| Maximum Emitter Base Voltage VEBO | 5V |
| Maximum Collector Base Voltage VCBO | 250V |
| Maximum Power Dissipation Pd | 50W |
| Maximum DC Collector Current Idc | -8A |
| Transistor Configuration | Single |
| Maximum Transition Frequency ft | 30MHz |
Key Features
- Maximum DC collector current of -8 amperes supports demanding load conditions.
- Maximum collector-emitter voltage rated at -250 volts ensures robust switching capabilities.
- Through-hole mount type facilitates easy PCB assembly and reliable mechanical stability.
- Maximum power dissipation of 50 watts allows efficient heat management.
- Minimum DC current gain of 10 enhances amplification performance.
- 3-pin configuration supports single transistor setup.
- Operating temperature range from -65°C to 150°C suits varied industrial environments.
- Maximum transition frequency of 30 MHz suitable for moderate frequency switching applications.
Product Description
onsemi MJE15033G is a PNP power transistor tailored for applications requiring high collector current and voltage handling capabilities. Encapsulated in a sturdy TO-220 package with through-hole mount, it offers straightforward PCB integration for industrial, communication, and power management systems.
Its maximum DC collector current of -8A and collector-emitter voltage of -250V make it suitable for power amplification and switching tasks in electronic circuits. The transistor features a minimum DC current gain (hFE) of 10, granting effective signal amplification.
With a maximum power dissipation of 50W, the device manages thermal loads efficiently, ensuring reliability in harsh conditions. The device operates reliably in a temperature range between -65°C and 150°C, supporting use in a range of industrial and automotive environments.
The transistor offers a maximum transition frequency of 30 MHz, which supports moderate-speed switching operations. Its 3-pin TO-220 format is ideal for through-hole mounting on power and control boards.
This PNP transistor is widely used in power supply controls, automotive electronics, motor drivers, and industrial switching circuitry. Maximum DC collector current of -8 A. Collector-emitter voltage up to -250 V. Through-hole mount with TO-220 package.
Power dissipation handling of 50 W. 3-pin single transistor configuration. Operating temperature span from -65°C to 150°C. Maximum transition frequency at 30 MHz. Minimum DC current gain of 10. Explore additional onsemi transistor products and electronic components on EnvMart for your industrial and commercial needs.
Explore more products in our Bipolar Transistors category.
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Frequently Asked Questions
The maximum DC collector current of this model is -8 A, making it suitable for demanding load conditions.
This transistor has a maximum collector-emitter voltage of -250 V, ensuring robust switching capabilities.
The maximum power dissipation for this unit is 50 W, allowing for efficient heat management during operation.
It operates reliably within a temperature range of -65°C to 150°C, suitable for various industrial environments.
The maximum transition frequency is 30 MHz, which supports moderate-speed switching applications.
This model features a through-hole mount type, which facilitates easy PCB assembly and reliable mechanical stability.
It has a 3-pin configuration and is designed for single transistor setups.
The minimum DC current gain (hFE) is 10, enhancing its amplification performance.
The dimensions are 30.02 mm in height, 10.53 mm in length, and 4.83 mm in width.
The maximum emitter-base voltage (VEBO) is 5 V, which is an important specification for its operation.
The country of origin for this model is India.
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