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onsemi 500 mA NPN Bipolar Transistor, 300 V, 20 W Power Dissipation, 3-Pin TO-225 MJE340G

Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 11.04mm
Length 7.8mm
Model MJE340G
Width 3mm
Mount Type Through Hole
Maximum Operating Temperature 150°C
Package Type TO-225
Minimum Operating Temperature -65°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo 300V
Minimum DC Current Gain hFE 30
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 3V
Maximum Power Dissipation Pd 20W
Maximum DC Collector Current Idc 500mA
Transistor Configuration Single

Key Features

  • Maximum DC collector current is 500 mA ensuring moderate current handling capacity.
  • With a maximum collector-emitter voltage of 300 V, suitable for medium voltage applications.
  • Package type is TO-225 with through-hole mount for easy PCB integration.
  • Rated power dissipation of 20 W for reliable thermal management.
  • Transistor polarity is NPN suitable for various switching and amplification circuits.
  • Minimum DC current gain (hFE) is 30 ensuring effective amplification.
  • Wide operational temperature range from -65°C to 150°C for varied environmental conditions.
  • 3-pin configuration for standard bipolar transistor applications.

Product Description

onsemi MJE340G Bipolar Transistor is a high-quality NPN transistor designed for electronic applications requiring moderate current and high voltage handling capabilities. It offers a maximum DC collector current of 500 mA and can withstand a collector-emitter voltage up to 300 V, making it suitable for various switching and amplifier circuits in industrial and consumer electronics.

The transistor comes in a TO-225 package with a through-hole mount type, simplifying installation on printed circuit boards. Its power dissipation rating of 20 W ensures reliable thermal performance during operation. The device offers a minimum DC current gain of 30, delivering effective signal amplification.

Designed for robust operation, the MJE340G supports a wide operating temperature range from -65°C up to 150°C, suitable for demanding environmental conditions often found in industrial, commercial, and laboratory electronics.

The device features a compact form factor with dimensions of 7.8 mm length, 3 mm width, and 11.04 mm height, and a 3-pin configuration, making it compatible with a broad range of electronic circuit designs. Although it does not possess automotive standard certification, it is ideal for general-purpose electronic component needs.

Maximum DC collector current of 500 mA allows moderate power handling. Handles collector-emitter voltage of 300 V for medium-voltage circuits. TO-225 package provides sturdy physical protection and ease of mounting. Rated for 20 W power dissipation for thermal reliability.

NPN transistor configuration fits common application requirements. Minimum DC current gain of 30 ensures effective amplification. Wide operating temperature range from -65°C to 150°C supports diverse working environments.

3-pin package suitable for standard bipolar transistor use cases. Compact size allows integration into size-constrained electronic designs. No automotive compliance, optimized for general electronics applications.

This transistor is well suited for use in industrial electronics, power supply circuitry, consumer electronics, and laboratory electronics modules where a dependable bipolar transistor is needed. Its robust ratings and form factor offer versatility across different applications.

Explore the full range of Bipolar Transistors at EnvMart for all your semiconductor component needs.

onsemi 500 mA NPN Bipolar Transistor, 300 V, 20 W Power Dissipation, 3-Pin TO-225 MJE340G
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Frequently Asked Questions

The maximum DC collector current for this model is 500 mA, allowing for moderate current handling capacity.

It can withstand a maximum collector-emitter voltage of 300 V, making it suitable for medium voltage applications.

The rated power dissipation for this transistor is 20 W, ensuring reliable thermal management during operation.

The MJE340G comes in a TO-225 package type, which features a through-hole mount for easy integration into printed circuit boards.

This model has a minimum DC current gain (hFE) of 30, providing effective amplification for various circuits.

It operates within a wide temperature range from -65°C to 150°C, suitable for diverse environmental conditions.

This transistor features a 3-pin configuration, which is standard for bipolar transistor applications.

The dimensions of this model are 7.8 mm in length, 3 mm in width, and 11.04 mm in height.

It is an NPN bipolar transistor, suitable for various switching and amplification circuits.

The maximum emitter-base voltage (VEBO) for the MJE340G is 3 V.

This transistor is well-suited for industrial electronics, power supply circuitry, consumer electronics, and laboratory electronics modules.

The country of origin for this model is India.

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