onsemi 1 NPN Darlington Bipolar Power Transistor, 30 A, 120 V, 200 hFE, 3-Pin Through Hole TO-204 MJ11016G

onsemi MJ11016G is an NPN type Darlington bipolar power transistor designed for heavy-duty switching and amplification applications in electronics. Packaged in a robust TO-204 through hole case, it is able to handle a continuous collector current of 30 A and a collector-emitter voltage of 120 V, making it suitable for power amplifier circuits and industrial output drivers.

This transistor offers a minimum DC current gain (hFE) of 200, ensuring effective amplification in signal processing and control circuits. It features monolithic construction with an integrated base emitter shunt resistor, enhancing performance stability and device reliability.

The MJ11016G transistor supports a maximum power dissipation rating of 200 W, allowing it to operate reliably under demanding thermal conditions with an operating temperature range from -55°C up to 200°C junction temperature. Its compact dimensions of 8.51 mm height and 39.37 mm length make it adaptable for various circuit board layouts.

Its 3-pin TO-204 package is designed for through hole mounting, facilitating traditional assembly methods. With a maximum collector-emitter saturation voltage of 4 V and emitter-base voltage limit of 5 V, the device also provides strong electrical parameter safeguards for efficient operation.

This product is ideal for industrial, manufacturing, and electronic amplifier applications where reliable high current and voltage capabilities are required. The transistor is sold in trays or packs and does not carry automotive certifications, making it a versatile choice for general purpose power transistor needs.

High DC current gain of 200 for efficient amplification. Rated for maximum power dissipation of 200 W. Designed for through hole mounting with 3-pin configuration. Suitable for general purpose amplifier output device applications.

Wide operating temperature range from -55°C to 200°C. Monolithic construction with built-in base emitter shunt resistor. Maximum collector-emitter saturation voltage of 4 V. NPN transistor polarity with a maximum emitter base voltage of 5 V.

Compact dimensions with 8.51 mm height and 39.37 mm length. Non-automotive standard version without additional certifications. Explore more power semiconductors and bipolar transistor products on EnvMart for your industrial, laboratory, and commercial applications.

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