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onsemi PNP Transistor BCP53-16T1G, -1.5 A Collector Current, -80 V Collector Emitter Voltage, 4-Pin SOT-223 Package

Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 7.3mm
Length 6.7mm
Model BCP53-16T1G
Width 1.75mm
Mount Type Surface
Series BCP53
Maximum Operating Temperature 150°C
Package Type SOT-223
Minimum Operating Temperature -65°C
Pin Count 4
Maximum Collector Emitter Voltage Vceo -80V
Minimum DC Current Gain hFE 100
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO 5V
Maximum Collector Base Voltage VCBO 100V
Maximum Power Dissipation Pd 1.5W
Maximum DC Collector Current Idc -1.5A
Transistor Configuration Single
Maximum Transition Frequency ft 50MHz
STMicroelectronics STN9360 Transistor, -500 mA PNP, -600 V, 3-Pin SOT-223Brand STMicroelectronics
Nexperia BCP53-16,115 Transistor, -1 A PNP, -80 V, 4-Pin SOT-223Brand Nexperia

Key Features

  • This transistor features a maximum power dissipation of 1.5 W for thermal management.
  • It includes a single transistor configuration with PNP polarity suitable for various general purpose applications.
  • The device operates within a temperature range from -65°C to 150°C for wide environmental tolerance.
  • The package dimensions are 7.3 mm in height, 6.7 mm in length, and 1.75 mm in width ensuring compact PCB layout.
  • Maximum transition frequency is 50 MHz supporting moderate frequency switching operations.
  • This transistor has a minimum DC current gain (hFE) of 100 for efficient amplification.
  • The maximum voltages include a collector-base voltage of 100 V and emitter-base voltage of 5 V, providing robust voltage handling.

Product Description

onsemi BCP53-16T1G is a PNP bipolar transistor designed for surface mounted circuit board applications, housed in a compact 4-Pin SOT-223 package. It supports a maximum DC collector current of -1.5 A and a collector-emitter voltage rating of -80 V, making it suitable for a variety of general purpose electronic circuits.

This transistor offers a power dissipation capacity of 1.5 watts and operates reliably across a broad temperature range from -65°C to 150°C, ensuring stability in demanding industrial and commercial environments.

With a minimum DC current gain (hFE) of 100 and a maximum transition frequency of 50 MHz, the BCP53-16T1G transistor efficiently handles amplification and switching tasks in signal processing, power regulation, and analog circuits.

The device’s compact dimensions - 7.3 mm height, 6.7 mm length, and 1.75 mm width - allow for high-density PCB layouts in automotive, industrial, and consumer electronic applications.

Supports maximum collector current of -1.5 A and collector-emitter voltage of -80 V. Single configuration PNP transistor with a 4-Pin SOT-223 surface mount package. Wide operating temperature range from -65°C to 150°C for durability.

Minimum current gain of 100 ensures effective amplification. Maximum power dissipation of 1.5 W helps manage thermal load efficiently. Maximum collector-base voltage rating of 100 V and emitter-base voltage rating of 5 V.

Transition frequency up to 50 MHz suitable for general purpose switching.

onsemi BCP53-16T1G transistor is commonly used in industrial automation, power supply circuits, and signal processing modules. It is ideal for engineers requiring a reliable and compact transistor with moderate voltage and current ratings.

Explore more high-quality Bipolar Transistors and semiconductor components at EnvMart for your electronic design needs.

onsemi PNP Transistor BCP53-16T1G, -1.5 A Collector Current, -80 V Collector Emitter Voltage, 4-Pin SOT-223 Package
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Frequently Asked Questions

The maximum DC collector current for this model is -1.5 A.

The collector-emitter voltage rating for this transistor is -80 V.

This transistor is housed in a 4-Pin SOT-223 package.

The operating temperature range for the BCP53-16T1G is from -65°C to 150°C.

The minimum DC current gain (hFE) for this transistor is 100.

This model has a maximum power dissipation of 1.5 W.

The maximum transition frequency for the BCP53-16T1G is 50 MHz.

The dimensions of this transistor are 7.3 mm in height, 6.7 mm in length, and 1.75 mm in width.

The maximum collector-base voltage (VCBO) for the BCP53-16T1G is 100 V.

The BCP53-16T1G is a PNP bipolar transistor.

This transistor is suitable for general purpose applications including signal processing, power regulation, and industrial automation.

The maximum emitter-base voltage (VEBO) for the BCP53-16T1G is 5 V.

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