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onsemi NPN Darlington Transistor 30 A 120 V High Gain HFE 200 3-Pin TO-204 MJ11016G

Category Darlington Transistor Brand onsemi Condition New

Specifications

Country of Origin Mexico
Brand onsemi
Height 8.51mm
Length 39.37mm
Model MJ11016G
Mount Type Through Hole
Series MJ1101
Maximum Operating Temperature 200°C
Package Type TO-204
Minimum Operating Temperature -55°C
Pin Count 3
Maximum Continuous Collector Current Ic 30A
Maximum Collector Emitter Voltage Vceo 120V
Number of Elements per Chip 1
Minimum DC Current Gain hFE 200
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 5V
Maximum Collector Emitter Saturation Voltage VceSAT 4V
Maximum Collector Base Voltage VCBO 120V
Maximum Collector Cut-off Current 1mA
Maximum Power Dissipation Pd 200W
• Junction Temperature to +200°C
Magnatec MJ11016 NPN Darlington Transistor, 30 A 120 V HFE 200, 3-Pin TO-3Brand: Magnatec
onsemi MJ11016G 1 Darlington Transistor NPN, 30 A 120 V HFE 200, 3-Pin TO-204

Key Features

  • High DC current gain of 200 ensures efficient amplification.
  • Designed with monolithic construction for reliable performance.
  • Built-in base emitter shunt resistor improves switching characteristics.
  • Suitable for general purpose amplifier and power applications.
  • Maximum power dissipation of 200 W supports heavy-duty operation.
  • Wide operating temperature range from -55°C to +200°C enhances durability.
  • Through-hole mounting eases installation and mechanical stability.
  • Compact dimensions with height 8.51 mm and length 39.37 mm.

Product Description

The onsemi MJ11016G is a high-performance NPN Darlington bipolar power transistor designed for demanding electronic applications requiring high current and voltage handling capabilities. Featuring a maximum continuous collector current of 30 A and collector-emitter voltage rating of 120 V, this transistor is well suited as an output device in general purpose amplifier circuits and power regulation systems.

Manufactured with a monolithic construction and integrated base emitter shunt resistor, the MJ11016G transistor offers stable switching characteristics and high DC current gain with a minimum hFE of 200. It supports a maximum power dissipation of 200 W, ensuring dependable operation in both industrial and commercial environments.

The device comes housed in a robust, lead-free TO-204 through-hole package conforming to the TO-3 standard, facilitating secure mounting and heat dissipation. It accommodates a wide temperature range from -55°C minimum operating temperature to 200°C maximum junction temperature, making it suitable for harsh conditions encountered in automotive, industrial, HVAC, and manufacturing applications.

Key mechanical specifications include a height of 8.51 mm and length of 39.37 mm, enabling compatibility with standard power transistor layouts. The transistor is configured with 3 pins and has an NPN polarity, widely preferred for power amplification and switching circuits.

Applications of the onsemi MJ11016G include use in DC motor control, power amplifier output stages, voltage regulation, and other discrete semiconductor roles requiring reliable high current switching with excellent gain. This product is manufactured in Mexico and adheres to environmental standards with a Pb-free construction.

High DC current gain ensures efficient performance. Monolithic construction supports robust operation. Built-in base emitter shunt resistor enhances switching speed. High power dissipation rating for demanding applications.

Wide operating temperature range increases reliability. Standard TO-204 package supports easy mounting. NPN polarity for common power transistor uses. Compact size suitable for standard power circuit boards. Manufactured in Mexico ensuring consistent quality.

Ideal for industrial, automotive, and commercial electronics.

EnvMart offers this onsemi MJ11016G Darlington Transistor as a reliable semiconductor solution for diverse power amplification and switching needs in professional industrial and electronic projects.

onsemi NPN Darlington Transistor 30 A 120 V High Gain HFE 200 3-Pin TO-204 MJ11016G
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Frequently Asked Questions

The maximum continuous collector current for the MJ11016G transistor is 30 A.

This model has a maximum collector-emitter voltage rating of 120 V.

The minimum DC current gain (hFE) of the onsemi MJ11016G is 200.

The MJ11016G transistor has a height of 8.51 mm and a length of 39.37 mm.

The operating temperature range for this transistor is from -55°C to +200°C.

The MJ11016G uses a through-hole mounting type, which facilitates secure installation.

The onsemi MJ11016G comes in a TO-204 package type.

The maximum power dissipation rating of this transistor is 200 W.

The polarity of the MJ11016G transistor is NPN.

The MJ11016G is suitable for applications such as DC motor control, power amplifier output stages, and voltage regulation.

The maximum collector base voltage for this transistor is 120 V.

The onsemi MJ11016G is manufactured in Mexico.

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