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| Country of Origin | Mexico |
|---|---|
| Brand | onsemi |
| Height | 8.51mm |
| Length | 39.37mm |
| Model | MJ11016G |
| Mount Type | Through Hole |
| Series | MJ1101 |
| Maximum Operating Temperature | 200°C |
| Package Type | TO-204 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Maximum Continuous Collector Current Ic | 30A |
| Maximum Collector Emitter Voltage Vceo | 120V |
| Number of Elements per Chip | 1 |
| Minimum DC Current Gain hFE | 200 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 5V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 4V |
| Maximum Collector Base Voltage VCBO | 120V |
| Maximum Collector Cut-off Current | 1mA |
| Maximum Power Dissipation Pd | 200W |
| • Junction Temperature | to +200°C |
| Magnatec MJ11016 NPN Darlington Transistor, 30 A 120 V HFE | 200, 3-Pin TO-3Brand: Magnatec |
| onsemi MJ11016G 1 Darlington Transistor NPN, 30 A 120 V HFE | 200, 3-Pin TO-204 |
The onsemi MJ11016G is a high-performance NPN Darlington bipolar power transistor designed for demanding electronic applications requiring high current and voltage handling capabilities. Featuring a maximum continuous collector current of 30 A and collector-emitter voltage rating of 120 V, this transistor is well suited as an output device in general purpose amplifier circuits and power regulation systems.
Manufactured with a monolithic construction and integrated base emitter shunt resistor, the MJ11016G transistor offers stable switching characteristics and high DC current gain with a minimum hFE of 200. It supports a maximum power dissipation of 200 W, ensuring dependable operation in both industrial and commercial environments.
The device comes housed in a robust, lead-free TO-204 through-hole package conforming to the TO-3 standard, facilitating secure mounting and heat dissipation. It accommodates a wide temperature range from -55°C minimum operating temperature to 200°C maximum junction temperature, making it suitable for harsh conditions encountered in automotive, industrial, HVAC, and manufacturing applications.
Key mechanical specifications include a height of 8.51 mm and length of 39.37 mm, enabling compatibility with standard power transistor layouts. The transistor is configured with 3 pins and has an NPN polarity, widely preferred for power amplification and switching circuits.
Applications of the onsemi MJ11016G include use in DC motor control, power amplifier output stages, voltage regulation, and other discrete semiconductor roles requiring reliable high current switching with excellent gain. This product is manufactured in Mexico and adheres to environmental standards with a Pb-free construction.
High DC current gain ensures efficient performance. Monolithic construction supports robust operation. Built-in base emitter shunt resistor enhances switching speed. High power dissipation rating for demanding applications.
Wide operating temperature range increases reliability. Standard TO-204 package supports easy mounting. NPN polarity for common power transistor uses. Compact size suitable for standard power circuit boards. Manufactured in Mexico ensuring consistent quality.
Ideal for industrial, automotive, and commercial electronics.
EnvMart offers this onsemi MJ11016G Darlington Transistor as a reliable semiconductor solution for diverse power amplification and switching needs in professional industrial and electronic projects.
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