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onsemi Darlington Transistor NPN 5 A 60 V HFE 1000, 3-Pin TO-220 TIP120G

Category Darlington Transistor Brand onsemi Condition New

Specifications

Country of Origin China
Brand onsemi
Height 4.82mm
Length 15.75mm
Model TIP120G
Mount Type Through Hole
Series TIP120
Maximum Operating Temperature 150°C
Package Type TO-220
Minimum Operating Temperature -65°C
Pin Count 3
Maximum Continuous Collector Current Ic 5A
Maximum Collector Emitter Voltage Vceo 60V
Number of Elements per Chip 1
Minimum DC Current Gain hFE 1000
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 5V
Maximum Collector Emitter Saturation Voltage VceSAT 2V
Maximum Collector Base Voltage VCBO 60V
Maximum Collector Cut-off Current 0.5mA
Maximum Power Dissipation Pd 65W
onsemi 1 Darlington Transistor NPN, 5 A 60 V HFE 1000, 3-Pin TO-220

Key Features

  • Designed for general-purpose amplifier and low-speed switching applications.
  • Features high DC current gain and low collector-emitter saturation voltage.
  • Built-in base emitter shunt resistor enhances device performance.
  • Compact plastic TO-220AB through-hole package for easy mounting.
  • Operates reliably between -65°C to 150°C temperature range.
  • Maximum power dissipation rated at 65 W for efficient thermal management.
  • Monolithic construction ensures consistent performance and durability.
  • Offers maximum emitter base voltage of 5 V and collector base voltage of 60 V.

Product Description

onsemi TIP120G is a medium power NPN Darlington bipolar power transistor designed for use as an output device in general-purpose amplification and low-speed switching applications. It delivers a maximum continuous collector current of 5 A and maximum collector emitter voltage of 60 V, making it suitable for various industrial and electronic control uses.

This transistor features a high DC current gain (hFE) of 1000 and a low collector-emitter saturation voltage of 2 V, which enhances efficiency and reduces power loss during switching. Its monolithic construction with a built-in base emitter shunt resistor ensures reliable and stable operation.

The TIP120G comes in a plastic TO-220AB through-hole package with 3 pins, facilitating straightforward PCB mounting and heat dissipation. The device supports an operating temperature range from -65°C to 150°C, allowing it to function effectively in demanding environments.

Additional technical specifications include a maximum power dissipation of 65 W, maximum emitter base voltage of 5 V, maximum collector base voltage of 60 V, and a low maximum collector cut-off current of 0.5 mA. These features make the TIP120G highly dependable for diverse electronics projects and industrial controls.

Manufactured in China, this onsemi transistor maintains high-quality standards, providing engineers and designers with a compact, efficient, and long-lasting semiconductor component.

Designed for general-purpose amplifier and switching applications. High DC current gain of 1000 for enhanced amplification. Low saturation voltage minimizes power dissipation. Built-in base emitter resistor improves device stability.

Plastic TO-220AB package with through-hole mount. Wide operating temperature range for versatile applications. Maximum power dissipation rating of 65 W. Low collector cut-off current for reduced leakage.

This transistor is an ideal component for use in industrial controls, electronic circuits, power amplifiers, and signal processing equipment. Explore more semiconductors and Darlington Transistors in the Electronics & Electricals category at EnvMart for professional-grade components.

onsemi Darlington Transistor NPN 5 A 60 V HFE 1000, 3-Pin TO-220 TIP120G
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Frequently Asked Questions

The maximum continuous collector current for this model is 5 A.

The maximum collector-emitter voltage (Vceo) is 60 V.

It has a minimum DC current gain (hFE) of 1000.

The dimensions of this transistor are 15.75 mm in length and 4.82 mm in height.

The maximum power dissipation rating is 65 W.

It operates reliably between -65°C to 150°C.

This transistor comes in a plastic TO-220AB through-hole package.

The maximum emitter base voltage (VEBO) is 5 V.

The maximum collector base voltage (VCBO) is also 60 V.

The maximum collector cut-off current is 0.5 mA.

It is designed for general-purpose amplification and low-speed switching applications.

The transistor polarity is NPN.

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