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| Country of Origin | China |
|---|---|
| Brand | onsemi |
| Height | 4.82mm |
| Length | 15.75mm |
| Model | TIP120G |
| Mount Type | Through Hole |
| Series | TIP120 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -65°C |
| Pin Count | 3 |
| Maximum Continuous Collector Current Ic | 5A |
| Maximum Collector Emitter Voltage Vceo | 60V |
| Number of Elements per Chip | 1 |
| Minimum DC Current Gain hFE | 1000 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 5V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2V |
| Maximum Collector Base Voltage VCBO | 60V |
| Maximum Collector Cut-off Current | 0.5mA |
| Maximum Power Dissipation Pd | 65W |
| onsemi 1 Darlington Transistor NPN, 5 A 60 V HFE | 1000, 3-Pin TO-220 |
onsemi TIP120G is a medium power NPN Darlington bipolar power transistor designed for use as an output device in general-purpose amplification and low-speed switching applications. It delivers a maximum continuous collector current of 5 A and maximum collector emitter voltage of 60 V, making it suitable for various industrial and electronic control uses.
This transistor features a high DC current gain (hFE) of 1000 and a low collector-emitter saturation voltage of 2 V, which enhances efficiency and reduces power loss during switching. Its monolithic construction with a built-in base emitter shunt resistor ensures reliable and stable operation.
The TIP120G comes in a plastic TO-220AB through-hole package with 3 pins, facilitating straightforward PCB mounting and heat dissipation. The device supports an operating temperature range from -65°C to 150°C, allowing it to function effectively in demanding environments.
Additional technical specifications include a maximum power dissipation of 65 W, maximum emitter base voltage of 5 V, maximum collector base voltage of 60 V, and a low maximum collector cut-off current of 0.5 mA. These features make the TIP120G highly dependable for diverse electronics projects and industrial controls.
Manufactured in China, this onsemi transistor maintains high-quality standards, providing engineers and designers with a compact, efficient, and long-lasting semiconductor component.
Designed for general-purpose amplifier and switching applications. High DC current gain of 1000 for enhanced amplification. Low saturation voltage minimizes power dissipation. Built-in base emitter resistor improves device stability.
Plastic TO-220AB package with through-hole mount. Wide operating temperature range for versatile applications. Maximum power dissipation rating of 65 W. Low collector cut-off current for reduced leakage.
This transistor is an ideal component for use in industrial controls, electronic circuits, power amplifiers, and signal processing equipment. Explore more semiconductors and Darlington Transistors in the Electronics & Electricals category at EnvMart for professional-grade components.
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