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Infineon OptiMOS 3 N-Channel MOSFET, 120 A, 60 V Enhancement Mode, 3-Pin TO-263 IPB029N06N3GATMA1

Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Height 4.57mm
Length 10.31mm
Model IPB029N06N3GATMA1
Width 9.45mm
Mount Type Surface
Series OptiMOS 3
Maximum Operating Temperature 175°C
Package Type TO-263
Minimum Operating Temperature -55°C
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RS Stock No. 914-0185Brand: InfineonManufacturers Part No.: IPB029N06N3GATMA1
Pin Count 3
Channel Type N
Maximum Continuous Drain Current Id 120A
Maximum Drain Source Voltage Vds 60V
Maximum Drain Source Resistance Rds 3.2mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 188W
Typical Gate Charge Qg @ Vgs 124nC
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf 1.2V

Key Features

  • Supports a maximum continuous drain current of 120 A.
  • Designed for a maximum drain-source voltage of 60 V.
  • Enhancement mode channel with low on-resistance of 3.2 mΩ.
  • Package type is a surface mount 3-pin TO-263 for reliable mounting.
  • Maximum power dissipation of 188 W ensures robust thermal performance.
  • Operates within a wide temperature range from -55°C to 175°C.
  • Typical gate charge of 124 nC at Vgs provides efficient switching.
  • Maximum gate-source voltage ranges from -20 V to +20 V for flexible gate drive.

Product Description

Infineon's IPB029N06N3GATMA1 OptiMOS 3 N-Channel MOSFET is engineered to meet high-performance demands in power management and switching applications. This device supports continuous drain currents up to 120 A and is rated for a maximum drain-source voltage of 60 V. It operates in enhancement mode to provide excellent efficiency and reliability.

Featuring a 3-pin TO-263 surface-mount package, the MOSFET offers a low drain-source resistance of 3.2 mΩ, which minimizes conduction losses, boosting power density and thermal management in compact electronic designs. The device dissipates up to 188 W of power safely, supporting high-power circuits in industrial and automotive environments.

Designed for operation across a wide temperature range from -55°C up to 175°C, this MOSFET ensures reliable performance under demanding conditions. Its typical gate charge of 124 nC at Vgs contributes to fast switching capability, ideal for synchronous rectification, DC-DC converters, and switch-mode power supplies.

The gate-source voltage tolerance from -20 V to +20 V allows flexible gate driving options without risking damage. The forward voltage of 1.2 V ensures effective conduction performance with minimal losses.

Compact physical dimensions of length 10.31 mm, width 9.45 mm, and height 4.57 mm make it suitable for dense board layouts requiring power MOSFETs with minimal footprint. Infineon OptiMOS 3 series components are optimized for energy-efficient and power-dense designs.

Supports a maximum continuous drain current of 120 A. Designed for a maximum drain-source voltage of 60 V. Enhancement mode channel with low Rds(on) of 3.2 mΩ. TO-263 3-pin surface-mount package. Maximum power dissipation of 188 W.

Wide operating temperature range of -55°C to 175°C. Typical gate charge of 124 nC at Vgs. Maximum gate-source voltage ±20 V. Forward voltage of 1.2 V. Compact dimensions 10.31 mm × 9.45 mm × 4.57 mm.

This MOSFET is ideal for applications in industrial power management, automotive control units, computer power supplies, and general electronic circuit design. Its combination of high power handling, efficient switching, and robust packaging supports demanding use cases in manufacturing, HVAC, and commercial electronics sectors.

Explore the electronics components catalog at EnvMart for related Infineon semiconductors and complementary power devices to optimize your system design innovation.

Infineon OptiMOS 3 N-Channel MOSFET, 120 A, 60 V Enhancement Mode, 3-Pin TO-263 IPB029N06N3GATMA1
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Frequently Asked Questions

The maximum continuous drain current for this model is 120 A.

It is designed for a maximum drain-source voltage of 60 V.

This MOSFET comes in a surface mount 3-pin TO-263 package type.

The device has a low on-resistance of 3.2 mΩ, which helps minimize conduction losses.

It supports a maximum power dissipation of 188 W, ensuring robust thermal performance.

This MOSFET operates within a wide temperature range from -55°C to 175°C.

The typical gate charge at Vgs is 124 nC, contributing to efficient switching.

The maximum gate-source voltage ranges from -20 V to +20 V, allowing for flexible gate driving options.

The dimensions are 10.31 mm in length, 9.45 mm in width, and 4.57 mm in height.

It is suitable for applications in industrial power management, automotive control units, and computer power supplies.

The forward voltage of this MOSFET is 1.2 V, ensuring effective conduction performance.

This model belongs to the OptiMOS 3 series, which is optimized for energy-efficient designs.

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