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| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 4.57mm |
| Length | 10.31mm |
| Model | IPB029N06N3GATMA1 |
| Width | 9.45mm |
| Mount Type | Surface |
| Series | OptiMOS 3 |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-263 |
| Minimum Operating Temperature | -55°C |
| Pay online using | Or choose to pay later via bank transfer |
| RS Stock No. | 914-0185Brand: InfineonManufacturers Part No.: IPB029N06N3GATMA1 |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 120A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 3.2mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 188W |
| Typical Gate Charge Qg @ Vgs | 124nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.2V |
Infineon's IPB029N06N3GATMA1 OptiMOS 3 N-Channel MOSFET is engineered to meet high-performance demands in power management and switching applications. This device supports continuous drain currents up to 120 A and is rated for a maximum drain-source voltage of 60 V. It operates in enhancement mode to provide excellent efficiency and reliability.
Featuring a 3-pin TO-263 surface-mount package, the MOSFET offers a low drain-source resistance of 3.2 mΩ, which minimizes conduction losses, boosting power density and thermal management in compact electronic designs. The device dissipates up to 188 W of power safely, supporting high-power circuits in industrial and automotive environments.
Designed for operation across a wide temperature range from -55°C up to 175°C, this MOSFET ensures reliable performance under demanding conditions. Its typical gate charge of 124 nC at Vgs contributes to fast switching capability, ideal for synchronous rectification, DC-DC converters, and switch-mode power supplies.
The gate-source voltage tolerance from -20 V to +20 V allows flexible gate driving options without risking damage. The forward voltage of 1.2 V ensures effective conduction performance with minimal losses.
Compact physical dimensions of length 10.31 mm, width 9.45 mm, and height 4.57 mm make it suitable for dense board layouts requiring power MOSFETs with minimal footprint. Infineon OptiMOS 3 series components are optimized for energy-efficient and power-dense designs.
Supports a maximum continuous drain current of 120 A. Designed for a maximum drain-source voltage of 60 V. Enhancement mode channel with low Rds(on) of 3.2 mΩ. TO-263 3-pin surface-mount package. Maximum power dissipation of 188 W.
Wide operating temperature range of -55°C to 175°C. Typical gate charge of 124 nC at Vgs. Maximum gate-source voltage ±20 V. Forward voltage of 1.2 V. Compact dimensions 10.31 mm × 9.45 mm × 4.57 mm.
This MOSFET is ideal for applications in industrial power management, automotive control units, computer power supplies, and general electronic circuit design. Its combination of high power handling, efficient switching, and robust packaging supports demanding use cases in manufacturing, HVAC, and commercial electronics sectors.
Explore the electronics components catalog at EnvMart for related Infineon semiconductors and complementary power devices to optimize your system design innovation.
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