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| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 4.57mm |
| Length | 10.31mm |
| Model | IPB034N06L3GATMA1 |
| Width | 9.45mm |
| Mount Type | Surface |
| Series | OptiMOS 3 |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-263 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 90A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 3.7mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 167W |
| Typical Gate Charge Qg @ Vgs | 59nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.2V |
Infineon IPB034N06L3GATMA1 is a high-performance OptiMOS 3 N-Channel MOSFET designed for power management and efficient switching applications in industrial and electronic systems. Featuring a maximum continuous drain current of 90 A and a maximum drain-source voltage of 60 V, this device is suited for demanding power switching tasks in SMPS and DC/DC converters.
This enhancement-mode MOSFET is packaged in a surface-mount TO-263 3-pin package, measuring 10.31 mm in length, 9.45 mm in width, and 4.57 mm in height, offering compact integration flexibility. The device exhibits an impressively low on-resistance of 3.7 milliohms, enabling minimal conduction losses and improved energy efficiency.
With a maximum power dissipation rating of 167 W and operating temperature range from -55°C up to 175°C, the IPB034N06L3GATMA1 is durable and reliable for industrial power electronics including power supplies, motor drives, and conversion systems. Its typical gate charge of 59 nC facilitates fast switching speeds to enhance system performance.
This MOSFET features a maximum gate-source voltage of ±20 V and a forward voltage of 1.2 V, characteristics ideal for high-speed power circuits. The product is built using lead-free plating processes, ensuring RoHS compliance.
Applications for this MOSFET include industrial power management, computing voltage regulation, power converters, and other commercial electronic devices requiring efficient, low-loss switching.
Supports up to 90 A continuous drain current to handle large loads safely. Operates reliably up to 60 V drain-source voltage for medium voltage power systems. Enhanced low Rds(on) of 3.7 mΩ reduces power dissipation during conduction.
Enables quick switching with typical gate charge of 59 nC. Package type TO-263 suited for surface mounting on PCBs. Wide operating temperature range from -55°C to 175°C ensures reliable performance in harsh environments.
Complies with JEDEC standards suitable for high quality industrial applications. Lead-free plating supports environmentally friendly manufacturing.
This MOSFET is listed within EnvMart's Electronics & Electricals > Semiconductor > Power MOSFET category. Discover more Infineon high-performance MOSFETs and power semiconductors to enhance your industrial, laboratory, manufacturing, and HVAC system designs.
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