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Infineon OptiMOS 3 N-Channel MOSFET, 90 A Continuous Drain Current, 60 V Drain Source Voltage, TO-263 IPB034N06L3GATMA1

Category Power MOSFET Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Height 4.57mm
Length 10.31mm
Model IPB034N06L3GATMA1
Width 9.45mm
Mount Type Surface
Series OptiMOS 3
Maximum Operating Temperature 175°C
Package Type TO-263
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type N
Maximum Continuous Drain Current Id 90A
Maximum Drain Source Voltage Vds 60V
Maximum Drain Source Resistance Rds 3.7mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 167W
Typical Gate Charge Qg @ Vgs 59nC
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf 1.2V

Key Features

  • Supports maximum continuous drain current of 90 A.
  • Operates at a maximum drain-source voltage of 60 V.
  • Features low on-resistance of 3.7 milliohms.
  • Maximum power dissipation rated at 167 W.
  • Enhancement-mode logic-level MOSFET designed for surface mount.
  • Operates from -55°C to 175°C maximum temperature.
  • Typical gate charge of 59 nanocoulombs enables fast switching.
  • Forward voltage drop of 1.2 V enhances efficiency.

Product Description

Infineon IPB034N06L3GATMA1 is a high-performance OptiMOS 3 N-Channel MOSFET designed for power management and efficient switching applications in industrial and electronic systems. Featuring a maximum continuous drain current of 90 A and a maximum drain-source voltage of 60 V, this device is suited for demanding power switching tasks in SMPS and DC/DC converters.

This enhancement-mode MOSFET is packaged in a surface-mount TO-263 3-pin package, measuring 10.31 mm in length, 9.45 mm in width, and 4.57 mm in height, offering compact integration flexibility. The device exhibits an impressively low on-resistance of 3.7 milliohms, enabling minimal conduction losses and improved energy efficiency.

With a maximum power dissipation rating of 167 W and operating temperature range from -55°C up to 175°C, the IPB034N06L3GATMA1 is durable and reliable for industrial power electronics including power supplies, motor drives, and conversion systems. Its typical gate charge of 59 nC facilitates fast switching speeds to enhance system performance.

This MOSFET features a maximum gate-source voltage of ±20 V and a forward voltage of 1.2 V, characteristics ideal for high-speed power circuits. The product is built using lead-free plating processes, ensuring RoHS compliance.

Applications for this MOSFET include industrial power management, computing voltage regulation, power converters, and other commercial electronic devices requiring efficient, low-loss switching.

Supports up to 90 A continuous drain current to handle large loads safely. Operates reliably up to 60 V drain-source voltage for medium voltage power systems. Enhanced low Rds(on) of 3.7 mΩ reduces power dissipation during conduction.

Enables quick switching with typical gate charge of 59 nC. Package type TO-263 suited for surface mounting on PCBs. Wide operating temperature range from -55°C to 175°C ensures reliable performance in harsh environments.

Complies with JEDEC standards suitable for high quality industrial applications. Lead-free plating supports environmentally friendly manufacturing.

This MOSFET is listed within EnvMart's Electronics & Electricals > Semiconductor > Power MOSFET category. Discover more Infineon high-performance MOSFETs and power semiconductors to enhance your industrial, laboratory, manufacturing, and HVAC system designs.

Infineon OptiMOS 3 N-Channel MOSFET, 90 A Continuous Drain Current, 60 V Drain Source Voltage, TO-263 IPB034N06L3GATMA1
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Frequently Asked Questions

The maximum continuous drain current is 90 A, allowing it to handle large loads safely.

This model operates at a maximum drain-source voltage of 60 V, making it suitable for medium voltage power systems.

The on-resistance is 3.7 milliohms, which helps to reduce power dissipation during conduction.

It is packaged in a TO-263 surface-mount type, which is designed for compact integration on printed circuit boards.

The typical gate charge is 59 nanocoulombs, enabling fast switching speeds for enhanced system performance.

The operating temperature range is from -55°C to 175°C, ensuring reliable performance in harsh environments.

The maximum power dissipation is rated at 167 W, suitable for demanding power management applications.

The forward voltage drop is 1.2 V, which enhances efficiency in high-speed power circuits.

This model features a 3-pin configuration, allowing for straightforward connections in applications.

It is an N-channel MOSFET, designed for enhancement mode operation.

It complies with JEDEC standards, ensuring it meets high-quality industrial application requirements.

The country of origin for this product is India.

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