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| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 0.9mm |
| Length | 2.9mm |
| Model | BSS84PH6327XTSA2 |
| Width | 1.3mm |
| Mount Type | Surface |
| Series | SIPMOS |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 170mA |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 12Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 360mW |
| Typical Gate Charge Qg @ Vgs | 1nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.24V |
Infineon BSS84PH6327XTSA2 SIPMOS Type P-Channel MOSFET is engineered for low-power switching in surface-mounted electronic assemblies, supporting a maximum continuous drain current of 170 mA and a maximum drain-source voltage of 60 V. This device operates in an enhancement mode within a small 3-pin SOT-23 package, making it ideal for compact PCB layouts in various industrial and automotive environments.
The MOSFET features a low typical gate charge of 1nC, reducing drive energy and switching losses during operation. Its maximum on-resistance of 12Ω enables efficient, controlled conduction suitable for circuits where low current loads are switched. With a maximum power dissipation rating of 360mW, the device handles moderate power levels while maintaining thermal stability from -55°C up to 150°C, ensuring reliable functionality across wide temperature ranges.
Designed to conform to AEC-Q101 automotive standards, this Infineon MOSFET is applicable in battery protection circuits, reverse-polarity switches, and load switching in automotive control modules. It is compatible with logic-level drivers used in portable instrumentation and compact power-rail selection in control boards, supporting diverse industrial, automotive, and electronics manufacturing applications.
Wide operating temperature range suitable for harsh environments. Compact SOT-23 package for small form factor assembly. Low gate charge for energy efficient switching. Controlled on-resistance for low current conduction.
Moderate power dissipation supports various load demands. Automotive grade with AEC-Q101 certification. Versatile for automotive battery and power management applications. Compatible with logic-level drivers and instrumentation.
This MOSFET is an ideal solution for engineers seeking a reliable, compact P-channel transistor with moderate voltage rating and robust thermal characteristics. It suits industrial, automotive, electronics manufacturing, and laboratory test applications requiring durable, energy-efficient discrete semiconductors. Browse Infineon products and related MOSFET components in the EnvMart catalog for advanced solutions tailored to modern electronics.
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