Toshiba N-Channel MOSFET, 30 A, 60 V Enhancement Mode, TO-220 3-Pin Through Hole TK30A06N1,S4X(S

Toshiba TK30A06N1,S4X(S is a high-performance N-Channel MOSFET designed for power electronic applications requiring reliable switching and amplification. It features a maximum continuous drain current of 30 A and a drain-source voltage rating of 60 V, ensuring capability in a wide range of industrial and electronic circuits.

The device is housed in a TO-220 3-pin package, optimized for through-hole mounting and efficient heat dissipation. This form factor facilitates straightforward integration into PCB layouts requiring robust power handling.

Its electrical characteristics include a maximum drain-source resistance of 15 milliohms, aiding in minimizing conduction losses. The forward voltage of -1.2 V and a maximum power dissipation of 25 W support energy-efficient operation in high current scenarios.

Designed for enhancement mode operation, it suits switching applications where precise gate control is critical. The maximum gate-source voltage range of -20 V to +20 V allows flexible drive voltages. Its typical gate charge of 16 nC promotes rapid switching speeds important in PWM and other control schemes.

The transistor operates reliably up to a maximum junction temperature of 150°C, making it well-suited for demanding industrial, automotive, and consumer electronics environments. The 3 pin configuration and through-hole mounting style ensure mechanical stability and simplify assembly processes.

Designed for enhancement mode operation suitable for switching and amplification. TO-220 package provides effective thermal dissipation and easy mounting. Maximum drain-source resistance is 15 mΩ for efficient conduction.

Maximum power dissipation rated at 25 W supports robust performance. Operating temperature up to 150°C ensures reliability in demanding conditions. Pin count of 3 for straightforward PCB integration and wiring. Through hole mount type facilitating mechanical stability.

Forward voltage drop is -1.2 V, enhancing energy efficiency. Maximum gate-source voltage ±20 V for flexible drive conditions. Typical gate charge is 16 nC at Vgs supporting fast switching.

This MOSFET is ideal for industrial power management, electronic circuit design, automotive electronics, and general semiconductor component applications. Its reliable specifications and proven Toshiba build quality provide confidence in electronic performance.

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