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DiodesZetex NPN Transistor, 3 A Max Collector Current, 300 V Collector Emitter Voltage, TO-92 Package, Through ZTX857STZ

Category Bipolar Transistors Brand DiodesZetex Condition New

Specifications

Country of Origin India
Brand DiodesZetex
Height 17.98mm
Length 4.77mm
Model ZTX857STZ
Width 2.41mm
Mount Type Through Hole
Series ZTX8X
Maximum Operating Temperature 200°C
Package Type TO-92
Minimum Operating Temperature -55°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo 300V
Minimum DC Current Gain hFE 15
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 6V
Maximum Collector Base Voltage VCBO 330V
Maximum Power Dissipation Pd 1.2W
Maximum DC Collector Current Idc 3A
Transistor Configuration Single
Maximum Transition Frequency ft 100MHz

Key Features

  • Maximum DC collector current of 3 amperes.
  • Collector emitter voltage rating of 300 volts enables operation in high voltage circuits.
  • Power dissipation up to 1.2 watts.
  • Minimum DC current gain (hFE) of 15 ensures reliable amplification.
  • Compact TO-92 package with through hole mounting supports easy PCB integration.
  • Operating temperature range from -55°C to 200°C for harsh environment applications.
  • Transition frequency up to 100 MHz suitable for high frequency circuit designs.
  • NPN transistor polarity with single transistor configuration.

Product Description

DiodesZetex ZTX857STZ is a general purpose NPN bipolar transistor designed for electronic applications requiring a maximum collector current of 3 A and a collector emitter voltage of up to 300 V. This component comes in a compact and widely used TO-92 3-pin package suitable for through hole mounting, making it ideal for PCB assembly in power amplification, switching, and signal processing circuits.

The transistor features a single configuration with a minimum current gain (hFE) of 15, and can dissipate up to 1.2 W power, allowing it to handle moderate power loads efficiently. With a maximum transition frequency of 100 MHz, this device suits high frequency applications including switching regulators and signal amplifiers.

Operating in a wide temperature range from -55°C to 200°C, the ZTX857STZ transistor is reliable for use in demanding industrial, automotive, and consumer electronics environments. Its maximum collector base voltage rating of 330 V and emitter base voltage up to 6 V ensure robust performance under various circuit conditions.

The transistor’s physical dimensions are compact, with a height of 17.98 mm, length of 4.77 mm, and width of 2.41 mm, facilitating convenient implementation in compact electronic assemblies. The through hole mount type allows for stable mechanical attachment and excellent thermal performance.

Key features include a durable TO-92 package, a 3-pin configuration, and a transistor polarity of NPN, making the ZTX857STZ suitable for switching, amplification, and general purpose semiconductor applications across industrial, laboratory, HVAC, manufacturing, and automotive sectors.

Maximum DC collector current of 3 amperes. Collector emitter voltage rating of 300 volts enables operation in high voltage circuits. Power dissipation up to 1.2 watts. Minimum DC current gain (hFE) of 15 ensures reliable amplification.

Compact TO-92 package with through hole mounting supports easy PCB integration. Operating temperature range from -55°C to 200°C for harsh environment applications. Transition frequency up to 100 MHz suitable for high frequency circuit designs.

NPN transistor polarity with single transistor configuration. Maximum collector base voltage of 330 volts provides robust performance. Pin count of 3 in a compact physical footprint (height 17.98 mm, width 2.41 mm, length 4.77 mm).

Explore our comprehensive semiconductor components catalog for more electronic parts suitable for various power and signal applications.

Explore more products in our Bipolar Transistors category.

DiodesZetex NPN Transistor, 3 A Max Collector Current, 300 V Collector Emitter Voltage, TO-92 Package, Through ZTX857STZ
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Frequently Asked Questions

The maximum DC collector current for this transistor is 3 amperes.

The collector-emitter voltage rating is 300 volts, enabling operation in high voltage circuits.

It can dissipate up to 1.2 watts of power.

The minimum DC current gain (hFE) is 15, ensuring reliable amplification.

This model operates within a temperature range of -55°C to 200°C.

The maximum transition frequency is up to 100 MHz, suitable for high frequency applications.

It comes in a compact TO-92 package designed for through hole mounting.

The dimensions are 17.98 mm in height, 4.77 mm in length, and 2.41 mm in width.

The maximum collector-base voltage rating is 330 volts.

The maximum emitter-base voltage is 6 volts.

It has a single transistor configuration with NPN polarity.

The country of origin for this transistor is India.

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