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onsemi PowerTrench N-Channel MOSFET, 67 A, 100 V Enhancement Mode, 3-Pin TO-220 FDPF045N10A

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onsemi PowerTrench N-Channel MOSFET, 67 A, 100 V Enhancement Mode, 3-Pin TO-220 FDPF045N10A

Name: onsemi PowerTrench N-Channel MOSFET, 67 A, 100 V Enhancement Mode, 3-Pin TO-220 FDPF045N10A
Brand: onsemi
SKU: 134945

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Category Discrete Semiconductor Brand onsemi Condition New

Specifications

Country of Origin	India
Brand	onsemi
Height	16.07mm
Length	10.36mm
Model	FDPF045N10A
Width	4.9mm
Mount Type	Through Hole
Series	PowerTrench
Maximum Operating Temperature	175°C
Package Type	TO-220
Minimum Operating Temperature	-55°C
Pin Count	3
Channel Type	N
Maximum Continuous Drain Current Id	67A
Maximum Drain Source Voltage Vds	100V
Maximum Drain Source Resistance Rds	4.5mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	43W
Typical Gate Charge Qg @ Vgs	57nC
Maximum Gate Source Voltage Vgs	-20, +20V
Forward Voltage Vf	1.3V

Key Features

This MOSFET features a maximum continuous drain current of 67 A.
It has a maximum drain-source voltage rating of 100 V enabling robust power handling.
The device uses enhancement mode channel operation for efficient switching.
Its maximum power dissipation is rated at 43 W.
Designed with a low drain-source resistance Rds(on) of 4.5 milliohms.
The typical gate charge at Vgs is 57 nC to optimize switching speed.
It supports an operating temperature range from -55 °C up to 175 °C.
Packaged in a TO-220 form factor with dimensions approximately 16.07 mm height, 10.36 mm length, and 4.9 mm width.

Product Description

onsemi FDPF045N10A is a PowerTrench N-Channel MOSFET transistor designed for high-performance power switching with a continuous drain current of 67 A and drain-source voltage up to 100 V. This enhancement mode device comes in a 3-pin TO-220 package suitable for through-hole mounting in industrial and electronic circuit applications.

The MOSFET's low on-resistance Rds(on) of 4.5 mΩ ensures efficient conduction losses, and its maximum power dissipation rating of 43 W supports robust operation under high load. The device's typical gate charge of 57 nC enables fast switching with minimal power loss, ideal for switching power supplies, motor control, and other power management needs.

It operates reliably across a temperature range from -55 °C to 175 °C, assuring durability in harsh environments. The transistor features a maximum gate-source voltage rating of -20 V to +20 V and a forward voltage of 1.3 V, providing stable switching performance.

The compact TO-220 package measures 16.07 mm in height, 10.36 mm in length, and 4.9 mm in width, facilitating easy integration into existing PCB layouts.

This onsemi PowerTrench MOSFET is well suited for industrial electronics, power management, motor drivers, and other applications requiring efficient high-current switching transistors. It is built to meet rigorous operational demands with reliable long-term stability.

This MOSFET features a maximum continuous drain current of 67 A. It has a maximum drain-source voltage rating of 100 V enabling robust power handling. The device uses enhancement mode channel operation for efficient switching.

Its maximum power dissipation is rated at 43 W. Designed with a low drain-source resistance Rds(on) of 4.5 milliohms. The typical gate charge at Vgs is 57 nC to optimize switching speed. It supports an operating temperature range from -55 °C up to 175 °C.

Packaged in a TO-220 form factor with dimensions approximately 16.07 mm height, 10.36 mm length, and 4.9 mm width. Suitable for industrial and electronic power management applications requiring high current MOSFETs. Explore other semiconductor and MOSFET products available in the Electronics & Electricals category at EnvMart for advanced power electronics solutions.

Explore more products in our Discrete Semiconductor category.