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Infineon SIPMOS N-Channel MOSFET 660 mA 200 V Enhancement 4-Pin SOT-223 BSP297H6327XTSA1

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Infineon SIPMOS N-Channel MOSFET 660 mA 200 V Enhancement 4-Pin SOT-223 BSP297H6327XTSA1

Name: Infineon SIPMOS N-Channel MOSFET 660 mA 200 V Enhancement 4-Pin SOT-223 BSP297H6327XTSA1
Brand: Infineon
SKU: 133791
Price: 0.72 USD
Availability: InStock

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Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin	India
Brand	Infineon
Height	1.6mm
Length	6.5mm
Model	BSP297H6327XTSA1
Width	3.5mm
Mount Type	Surface
Series	SIPMOS
Maximum Operating Temperature	150°C
Package Type	SOT-223
Minimum Operating Temperature	-55°C
Pin Count	4
Automotive Standard	AEC-Q101
Channel Type	N
Maximum Continuous Drain Current Id	660mA
Maximum Drain Source Voltage Vds	200V
Maximum Drain Source Resistance Rds	1.8Ω
Channel Mode	Enhancement
Maximum Power Dissipation Pd	1.8W
Typical Gate Charge Qg @ Vgs	12.9nC
Maximum Gate Source Voltage Vgs	-20, +20V
Forward Voltage Vf	0.84V

Key Features

N-channel configuration enhances switching performance.
Low gate threshold voltage enables compatibility with logic level signals.
Maximum power dissipation of 1.8 W ensures effective thermal handling.
Compact surface-mount SOT-223 package supports space-efficient designs.
Typical total gate charge of 12.9 nC provides fast switching capabilities.
Automotive grade with AEC-Q101 qualification for reliable automotive use.
Operates within temperature range from -55°C to 150°C for wide environmental resilience.
Maximum drain-source resistance of 1.8 Ω optimizes power efficiency in circuits.

Product Description

Infineon BSP297H6327XTSA1 SIPMOS N-Channel MOSFET delivers efficient switching capability with a maximum continuous drain current of 660 mA and a drain-source breakdown voltage of 200 V. Its enhancement mode channel and low gate threshold voltage make it compatible with logic-level drive, ensuring versatile usage in electronic circuits.

Packaged in a compact 4-pin SOT-223 surface mount design, this MOSFET supports automated assembly and space-saving PCB layouts. It achieves a maximum power dissipation of 1.8 W, allowing it to operate reliably with effective thermal management up to 150°C.

The device features a typical gate charge of 12.9 nC at 10 V, facilitating rapid switching and high-frequency operations. It incorporates a maximum drain-source resistance of 1.8 Ω, balancing power loss and performance. Certified to the automotive industry standard AEC-Q101, it ensures robustness for automotive electronic applications.

Constructed primarily from silicon, the MOSFET is ideal for motor control systems, consumer electronics power management, battery management systems, signal amplification in communications, and switch-mode power supplies. Its wide operating temperature range from -55°C to 150°C makes it suitable for harsh and demanding operating environments.

N-channel enhancement mode for efficient switching. Low gate threshold voltage for logic level control. Compact surface mount SOT-223 packaging for space efficiency. 660 mA continuous drain current for versatile use. 200 V maximum drain-source voltage for high voltage applications.

Maximum power handling of 1.8 W for thermal reliability. Typical gate charge 12.9 nC supports fast switching. AEC-Q101 automotive standard certified. Wide temperature range -55°C to 150°C for stable operation. Applications include motor control, power management, and communications.

This MOSFET is a dependable choice for industrial, automotive, communication, and consumer electronics sectors. Explore a wide range of compatible semiconductor components in the Infineon portfolio through EnvMart for your specialized electronic design needs.