Infineon SIPMOS N-Channel MOSFET 170 mA 400 V Enhancement Mode 4-Pin SOT-223 BSP324H6327XTSA1

Infineon BSP324H6327XTSA1 is a SIPMOS series N-Channel MOSFET designed for high-voltage switching applications requiring an enhancement mode transistor. It operates with a maximum continuous drain current of 170 mA and supports a drain-source voltage of up to 400 V. Packaged in a 4-pin SOT-223 surface-mount device with compact dimensions of 6.5 mm length, 3.5 mm width, and 1.6 mm height, it balances electrical and thermal performance for PCB assembly.

The device features a low maximum drain-source resistance of 25Ω, enabling lower conduction losses in low current circuits. With a maximum power dissipation rated at 1.8 W, it manages moderate thermal loads efficiently. Its typical gate charge of 4.54 nC facilitates faster gate switching with reduced drive requirements. The forward voltage is 0.8 V, which improves efficiency in switching events by lowering diode drops.

This MOSFET meets the automotive industry standard AEC-Q101, ensuring reliability in automotive electronic control systems. It is rated for operation across an extensive temperature range from -55°C to +150°C, making it suitable for thermally variable environments.

Typical applications include use as switching elements in auxiliary automotive circuits, high-voltage control in power supply snubbers, gate driver circuits for low-current switching stages, and load protection in sensing modules. Its 4-pin structure and surface-mount design make it ideal for compact power and control designs requiring reliable switching components.

Designed for surface-mount power switching in demanding environments. Low 25Ω maximum drain-source resistance reduces conduction losses. Handles up to 1.8W of power dissipation for moderate thermal loads. Typical gate charge of 4.54nC allows efficient gate drive.

Forward voltage of 0.8V improves diode drop efficiency during switching. Operates reliably across a wide temperature range from -55°C to 150°C. Meets automotive AEC-Q101 standard for robust automotive electronics use. Compact dimensions of 6.5 x 3.5 x 1.6 mm suit board-level integration.

Suitable for auxiliary circuits, power supply snubbers, gate driver applications, and load protection. Enhancement mode device with ±20V maximum gate-source voltage for safe gate drive design.

This product is ideal for industrial, automotive, and electronic manufacturing applications where robust and compact N-channel MOSFETs are required. Explore more Infineon semiconductor solutions and SIPMOS MOSFETs within the EnvMart catalogue.