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onsemi NPN Power Transistor 10 A, 60 V, Surface Mount TO-252 Package MJD3055T4G

Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 16mm
Length 6.73mm
Model MJD3055T4G
Width 2.38mm
Mount Type Surface
Series MJD3055
Maximum Operating Temperature 150°C
Package Type TO-252
Minimum Operating Temperature -55°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo 60V
Minimum DC Current Gain hFE 5
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 5V
Maximum Collector Base Voltage VCBO 70V
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 20W
Maximum DC Collector Current Idc 10A
Transistor Configuration Single
Maximum Transition Frequency ft 500kHz

Key Features

  • This transistor features a maximum DC collector current of 10 A.
  • Designed with a maximum collector-emitter voltage of 60 V and collector-base voltage of 70 V.
  • The device supports a maximum power dissipation of 20 W for robust operation.
  • It offers a wide operating temperature range from -55°C to 150°C.
  • Configured as a single NPN transistor with three pins in a DPAK (TO-252) package.
  • Minimum DC current gain of 5 and a maximum emitter-base voltage of 5 V.
  • Transition frequency up to 500 kHz, suitable for power switching applications.
  • Compliance with automotive AEC-Q101 standard for reliability in automotive use cases.

Product Description

onsemi MJD3055T4G is a high-power NPN bipolar transistor designed for electronic and power control applications, capable of handling collector currents up to 10 A and voltages up to 60 V. Its TO-252 DPAK surface mount package offers space-efficient mounting with three electrical pins.

This transistor is engineered to dissipate up to 20 W of power, making it ideal for demanding industrial, automotive, and HVAC applications that require robust switching and amplification. It operates reliably over a temperature range from -55°C to 150°C, sustaining performance in harsh environments.

Featuring a collector-base voltage rating of 70 V and emitter-base voltage maximum of 5 V, the MJD3055T4G ensures safe operation within specified electrical limits. It exhibits a minimum current gain of 5, adequate for general power transistor applications.

The device's transition frequency of 500 kHz supports moderate-speed switching tasks in power converters, motor drivers, and control circuits.

Certified to the automotive AEC-Q101 standard, this transistor meets stringent quality and reliability requirements for automotive and industrial electronics. Its compact TO-252 form factor with dimensions approximately 16 mm height, 6.73 mm length, and 2.38 mm width facilitates compact PCB layouts.

Typical industrial uses include power regulation, motor control, amplification stages, and switching in manufacturing, automotive, and HVAC systems. The surface mount TO-252 package enables efficient automated PCB assembly.

This transistor features a maximum DC collector current of 10 A. Designed with a maximum collector-emitter voltage of 60 V and collector-base voltage of 70 V. The device supports a maximum power dissipation of 20 W for robust operation.

It offers a wide operating temperature range from -55°C to 150°C. Configured as a single NPN transistor with three pins in a DPAK (TO-252) package. Minimum DC current gain of 5 and a maximum emitter-base voltage of 5 V. Transition frequency up to 500 kHz, suitable for power switching applications.

Compliance with automotive AEC-Q101 standard for reliability in automotive use cases. Compact dimensions enhance integration in surface mount designs. Explore advanced semiconductor components like onsemi MJD3055T4G transistors on EnvMart for your electronic and industrial projects.

Explore more products in our Bipolar Transistors category.

onsemi NPN Power Transistor 10 A, 60 V, Surface Mount TO-252 Package MJD3055T4G
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Frequently Asked Questions

The maximum DC collector current for this transistor is 10 A.

The maximum collector-emitter voltage rating is 60 V.

This model supports a maximum power dissipation of 20 W.

The operating temperature range is from -55°C to 150°C.

The transition frequency is up to 500 kHz, suitable for moderate-speed switching applications.

It is configured as a single NPN transistor with three pins in a DPAK (TO-252) package.

The dimensions of the TO-252 package are approximately 16 mm in height, 6.73 mm in length, and 2.38 mm in width.

The minimum DC current gain is 5.

The maximum emitter-base voltage is 5 V.

It complies with the automotive AEC-Q101 standard for reliability in automotive applications.

This transistor is suitable for power regulation, motor control, amplification stages, and switching in manufacturing, automotive, and HVAC systems.

This model uses surface mount technology in a DPAK (TO-252) package, facilitating efficient automated PCB assembly.

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