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STMicroelectronics N-channel MDmesh K5, SuperMESH5™ MOSFET, 19.5 A, 800 V, Enhancement Mode, 3-Pin TO-220 STP25N80K5
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 15.75mm |
| Length | 10.4mm |
| Model | SuperMESH5 |
| Width | 4.6mm |
| Mount Type | Through Hole |
| Series | MDmesh K5, SuperMESH5 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 19.5A |
| Maximum Drain Source Voltage Vds | 800V |
| Maximum Drain Source Resistance Rds | 260mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 250W |
| Typical Gate Charge Qg @ Vgs | 40nC |
| Maximum Gate Source Voltage Vgs | -30, +30V |
| Forward Voltage Vf | 1.5V |
Key Features
- This MOSFET operates in enhancement mode for efficient switching.
- Maximum power dissipation is 250 W for high load capacity.
- Typical gate charge is 40 nC at gate-source voltage of 40 V.
- Maximum drain-source resistance is 260 mΩ, optimizing conduction losses.
- Designed for through-hole mounting with 3 pin count.
- Operating temperature ranges from -55°C to 150°C for harsh environments.
- Physical dimensions include 15.75 mm height, 10.4 mm length, and 4.6 mm width.
- Maximum gate-source voltage ranges from -30 V to +30 V.
Product Description
STMicroelectronics STP25N80K5 is an N-channel MOSFET from the MDmesh K5, SuperMESH5™ series designed for power switching applications requiring high current and voltage ratings. This device is housed in a 3-pin TO-220 package, facilitating through-hole mounting in industrial, electronic, and power control systems.
It supports a maximum continuous drain current of 19.5 A and withstands a maximum drain-source voltage of 800 V, suitable for demanding switching tasks. The enhancement mode channel and typical gate charge of 40 nC at 40 V gate voltage enable fast switching and efficient operation in power electronics circuits.
The MOSFET can dissipate up to 250 W, making it robust for high power applications, while offering a low maximum drain-source resistance of 260 mΩ that reduces conduction losses. Operating temperature conditions from -55°C to 150°C make it reliable for use in automotive, industrial, and general-purpose electronic systems.
Physical dimensions measure 15.75 mm in height, 10.4 mm in length, and 4.6 mm in width, allowing compact integration. This MOSFET uses a TO-220 package type for effective heat dissipation. The N-channel enhancement mode is ideal for switching high voltages and currents.
It includes a maximum gate-source voltage rating of -30 V to +30 V for gate protection. Pin count of 3 pins suits basic semiconductor applications. No automotive standards or certifications are indicated for this product.
This STMicroelectronics MDmesh K5, SuperMESH5™ series MOSFET is suitable for industrial electronics, power control, manufacturing automation, and energy management systems. Explore more MOSFETs and semiconductors on EnvMart for your design and production needs.
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Frequently Asked Questions
The maximum continuous drain current for this MOSFET is 19.5 A.
It can withstand a maximum drain-source voltage of 800 V.
The typical gate charge at a gate-source voltage of 40 V is 40 nC.
The maximum power dissipation is 250 W.
The physical dimensions are 15.75 mm in height, 10.4 mm in length, and 4.6 mm in width.
The maximum drain-source resistance is 260 mΩ.
The operating temperature range is from -55°C to 150°C.
This MOSFET supports through-hole mounting with a 3-pin configuration.
The package type is TO-220.
The maximum gate-source voltage ranges from -30 V to +30 V.
This MOSFET utilizes an N-channel configuration.
This MOSFET is suitable for industrial electronics, power control, manufacturing automation, and energy management systems.
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