STMicroelectronics N-Channel MDmesh Power MOSFET, 11 A, 800 V, Enhancement Mode, 3-Pin TO-263 STB11NM80

STMicroelectronics STB11NM80 is a high-performance N-Channel MDmesh Power MOSFET specifically engineered for power switching applications requiring low on-resistance and high avalanche ruggedness.

This device features a maximum continuous drain current of 11 A and withstands voltages up to 800 V, packaged in a compact 3-pin TO-263 surface-mount form factor ideal for dense PCB layouts.

Developed using STMicroelectronics' proprietary MDmesh technology, it combines the multiple drain process with PowerMESH horizontal layout to achieve superior dynamic performance compared to conventional MOSFETs.

Key electrical characteristics include a maximum power dissipation of 150 W, typical gate charge of 43.6 nC at the designated gate voltage, a maximum gate-source voltage rating of 30 V, and a low forward voltage drop of 0.86 V, contributing to enhanced energy efficiency and thermal performance.

The MOSFET is designed for applications in switching power supplies, motor drives, and other industrial, laboratory, and commercial electronics requiring robust and reliable power control components.

Temperature operating range from -65 °C to +150 °C ensures device reliability even under demanding thermal conditions. Package dimensions are approximately 10.4 mm in length, 9.35 mm width, and 4.37 mm height, providing straightforward integration into surface mount assemblies.

This MOSFET utilizes MDmesh technology for low on-resistance and high avalanche capability. It features enhancement mode channel operation for efficient switching. Maximum power dissipation is rated at 150 W for robust thermal management.

Typical gate charge is 43.6 nC at Vgs, optimizing gate drive efficiency. Designed for surface mount applications with a compact TO-263 package footprint. Operating temperature range extends from -65 °C to +150 °C for reliability in harsh environments.

Maximum gate-source voltage is 30 V, ensuring safe gate control. Low forward voltage of 0.86 V improves conduction efficiency in switching circuits.

The STMicroelectronics STB11NM80 MOSFET is an ideal choice for engineers and designers focused on high efficiency and reliable switching performance in electronic power management.

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