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onsemi Darlington Transistor NPN, 20 A, 100 V, HFE 100, 3-Pin TO-247 MJH6284G

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onsemi Darlington Transistor NPN, 20 A, 100 V, HFE 100, 3-Pin TO-247 MJH6284G

Name: onsemi Darlington Transistor NPN, 20 A, 100 V, HFE 100, 3-Pin TO-247 MJH6284G
Brand: onsemi
SKU: 131736
Price: 4.18 USD
Availability: InStock

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Category Darlington Transistor Brand onsemi Condition New

Specifications

Country of Origin	India
Brand	onsemi
Height	21.08mm
Length	16.26mm
Model	MJH6284G
Mount Type	Through Hole
Series	MJH6284
Maximum Operating Temperature	150°C
Package Type	TO-247
Minimum Operating Temperature	-65°C
Pin Count	3
Maximum Continuous Collector Current Ic	20A
Maximum Collector Emitter Voltage Vceo	100V
Number of Elements per Chip	1
Minimum DC Current Gain hFE	100
Transistor Polarity	NPN
Maximum Emitter Base Voltage VEBO	5V
Maximum Collector Emitter Saturation Voltage VceSAT	2V
Maximum Collector Base Voltage VCBO	100V
Maximum Collector Cut-off Current	5mA
Maximum Power Dissipation Pd	160W
onsemi 1 Darlington Transistor NPN, 20 A 100 V HFE	100, 3-Pin TO-247

Key Features

This transistor offers a high minimum DC current gain (hFE) of 100.
It utilizes a standard 3-pin TO-247 package for through-hole mounting.
The device operates reliably in temperatures ranging from -65°C to 150°C.
It features a maximum power dissipation of 160 W for robust performance in power applications.
Ideal for industrial power switching and amplification applications requiring durable NPN Darlington transistors.
The transistor provides a maximum collector base voltage of 100 V and maximum emitter base voltage of 5 V.
Maximum collector cut-off current is low at 5 mA, ensuring efficiency.
Maximum collector emitter saturation voltage is 2 V, suitable for efficient switching circuits.

Product Description

onsemi MJH6284G is a high-performance NPN Darlington transistor designed for power amplification and switching applications in industrial and electronic environments. The device supports a maximum continuous collector current of 20 A and can withstand a collector emitter voltage up to 100 V, making it suitable for demanding power control tasks.

Encapsulated in a 3-pin TO-247 package type, the transistor supports through-hole mounting which is widely used for robust mechanical fixation and thermal management in circuit boards. Its high minimum DC current gain (hFE) of 100 ensures efficient signal amplification across a variety of applications.

With a maximum power dissipation capability of 160 W, the MJH6284G transistor operates well within the thermal limits at elevated temperatures reaching up to 150°C, ensuring reliability under heavy loads. It also features maximum collector base and emitter base voltages of 100 V and 5 V respectively, catering to stable switching performance.

The transistor is optimized for low collector cut-off current of 5 mA and a low collector emitter saturation voltage of 2 V, providing efficient low-loss operation suitable for power supply circuits, motor drivers, and industrial machinery controls.

Engineered as a single element per chip device without specific industry approvals, the MJH6284G is ideal for general discrete semiconductor applications requiring durable, reliable NPN Darlington Transistors.

This transistor provides high gain and efficiency in power switching and amplification applications. The TO-247 package supports effective heat dissipation in industrial electronics. Operating temperature range ensures functionality in harsh environments.

Suitable for use in industrial power control, manufacturing equipment, and electronic modules. Robust electrical characteristics make it compatible with a broad range of circuit designs. Browse more industrial semiconductors and discrete components on EnvMart for your power electronics needs.