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| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 21.08mm |
| Length | 16.26mm |
| Model | MJH11021G |
| Mount Type | Through Hole |
| Series | MJH11017 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -65°C |
| Pin Count | 3 |
| Maximum Continuous Collector Current Ic | 15A |
| Maximum Collector Emitter Voltage Vceo | 250V |
| Number of Elements per Chip | 1 |
| Minimum DC Current Gain hFE | 100 |
| Transistor Polarity | PNP |
| Maximum Emitter Base Voltage VEBO | 5V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.5V |
| Maximum Collector Base Voltage VCBO | 250V |
| Maximum Collector Cut-off Current | 5mA |
| Maximum Power Dissipation Pd | 150W |
| onsemi 1 Darlington Transistor PNP, 15 A 250 V HFE | 100, 3-Pin TO-247 |
onsemi MJH11021G is a high-performance PNP Darlington transistor designed for power switching and amplification applications. This transistor is housed in a TO-247 package featuring 3 pins and through-hole mount type.
It supports a maximum continuous collector current of 15 amperes and a maximum collector-emitter voltage of 250 volts, making it suitable for demanding power semiconductor applications. The device can dissipate up to 150 watts of power, enabling efficient operation in thermal management environments.
The transistor offers a high minimum DC current gain (hFE) of 100, which enhances its amplification capabilities. It is designed to operate securely in temperature ranges from -65°C to 150°C, suitable for automotive and industrial conditions.
Additional electrical characteristics include a maximum emitter-base voltage of 5 volts, maximum collector-base voltage of 250 volts, and a maximum collector-emitter saturation voltage of 2.5 volts. Its maximum collector cut-off current is rated at 5 mA.
Physical dimensions are approximately 21.08 mm in height and 16.26 mm in length. This device is a discrete power semiconductor component typically used in electronic designs requiring a Darlington transistor with robust current handling and voltage ratings.
Maximum continuous collector current of 15 amperes ensures high current handling capability. Collector-emitter voltage rating of 250 volts suitable for various power applications. Power dissipation up to 150 watts enables robust thermal performance.
High current gain (hFE) minimum value of 100 for efficient amplification. Transistor polarity is PNP in a 3-pin through-hole TO-247 package. Operating temperature range from -65°C to 150°C supports industrial environments.
Maximum emitter-base voltage of 5 V and collector-base voltage of 250 V provide reliable switching. Maximum collector-emitter saturation voltage of 2.5 V for efficient switching. Dimensions approximately 21.08 mm height and 16.26 mm length.
This transistor finds application in electronics, industrial power control, manufacturing machinery, and high-power amplification circuits requiring reliable and durable semiconductor components. onsemi is well-known for its quality semiconductor devices, ensuring dependable performance in demanding environments.
Explore more Darlington Transistors and other semiconductors in the Electronics & Electricals category at EnvMart for your industrial and commercial requirements.
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