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onsemi NPN Darlington Transistor 2 A 100 V High Gain 1000, 3-Pin IPAK MJD112-1G
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 6.35mm |
| Length | 6.73mm |
| Model | MJD112-1G |
| Mount Type | Through Hole |
| Series | MJD112 |
| Maximum Operating Temperature | 150°C |
| Package Type | IPAK |
| Minimum Operating Temperature | -65°C |
| Pin Count | 3 |
| Maximum Continuous Collector Current Ic | 2A |
| Maximum Collector Emitter Voltage Vceo | 100V |
| Number of Elements per Chip | 1 |
| Minimum DC Current Gain hFE | 1000 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 5V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2V |
| Maximum Collector Base Voltage VCBO | 100V |
| Maximum Collector Cut-off Current | 20μA |
| Automotive Standard | AEC-Q101 |
| Maximum Power Dissipation Pd | 20W |
| onsemi 1 Darlington Transistor NPN, 2 A 100 V HFE | 1000, 3-Pin IPAK |
Key Features
- Designed for general purpose power and switching applications.
- Supports a maximum power dissipation of 20 watts.
- Encapsulated in a 3-pin IPAK plastic package for through-hole mounting.
- Operates reliably from -65°C up to 150°C operating temperature.
- Maximum collector base voltage and collector emitter voltage are 100 V each.
- Maximum emitter base voltage is 5 V with collector cutoff current as low as 20 microamperes.
- Meets automotive standard AEC-Q101, ensuring robustness for automotive applications.
- Suitable for output or driver stages in switching regulators, converters, and power amplifiers.
Product Description
onsemi MJD112-1G is an NPN Darlington Transistor designed for general purpose power and switching applications. It features a maximum continuous collector current of 2 Amperes and a collector emitter voltage rating of 100 Volts. With a high DC current gain of 1000, this transistor is ideal for load driving and amplification in electronic circuits.
The transistor is housed in a 3-pin IPAK package suitable for through-hole mounting, ensuring easy integration into printed circuit boards. It can dissipate up to 20 watts of power, making it capable of handling moderate power loads effectively.
Operating temperature range spans from -65°C to 150°C, ensuring suitability for demanding industrial and automotive environments. The device meets the stringent AEC-Q101 automotive standard for reliability in automotive electronic applications.
This transistor is RoHS compliant, Pb-free, and environmentally safe. It is commonly used in switching regulators, power converters, power amplifiers, and output driver stages in various electronic systems.
General purpose power and switching transistor with 2 A maximum collector current. High DC gain of 1000 for efficient amplification. Durable 3-pin IPAK plastic package for through-hole mounting. Wide operating temperature range from -65°C to 150°C.
Complies with automotive standard AEC-Q101. Handles 20 W maximum power dissipation safely. Lead-free and RoHS compliant for environmental safety. Suitable for industrial, automotive, and power electronic applications. Low collector cutoff current improves efficiency.
This Darlington Transistor is part of the MJD112 series by onsemi, known for its robust performance in power switching and amplification. It is essential for designers needing a reliable, high-gain transistor for use in electronics manufacturing, automotive electronics, industrial control units, and power management systems.
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Frequently Asked Questions
The maximum continuous collector current for this model is 2 Amperes.
It has a maximum collector emitter voltage rating of 100 Volts.
The transistor features a high DC current gain of 1000.
It can dissipate up to 20 watts of power safely.
This transistor operates reliably in a temperature range from -65°C to 150°C.
It is encapsulated in a 3-pin IPAK plastic package suitable for through-hole mounting.
This model meets the automotive standard AEC-Q101, ensuring robustness for automotive applications.
The maximum emitter base voltage is 5 Volts.
The maximum collector cut-off current is 20 microamperes.
The height is 6.35 mm and the length is 6.73 mm.
This transistor has a pin count of 3.
It is suitable for use in switching regulators, power converters, power amplifiers, and output driver stages.
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