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onsemi Small Signal NPN Transistor 200 mA 50 V 3-Pin SOT-23 MMBT6428LT1G

Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 1.11mm
Length 3.04mm
Model MMBT6428LT1G
Width 2.64mm
Mount Type Surface
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -55°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo 50V
Minimum DC Current Gain hFE 250
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 6V
Maximum Collector Base Voltage VCBO 60V dc
Maximum Power Dissipation Pd 225mW
Maximum DC Collector Current Idc 200mA
Transistor Configuration Single
Maximum Transition Frequency ft 100MHz
Nexperia Transistor, 100 mA NPN, 50 V, 3-Pin SOT-23Brand Nexperia

Key Features

  • Maximum DC collector current is 200 mA supporting moderate load applications.
  • Collector-emitter voltage rating of 50 V allows safe operation within medium voltage circuits.
  • Compact 3-pin SOT-23 surface mount package suitable for volume assembly.
  • High DC current gain minimum of 250 enhances amplification efficiency.
  • Maximum power dissipation of 225 mW ensures reliable heat management.
  • Transition frequency of 100 MHz supports high frequency signal switching and amplification.
  • Operating temperature range spans from -55°C to 150°C ensuring stability across environments.
  • Pin count of 3 provides standard transistor connections for easy circuit integration.

Product Description

onsemi MMBT6428LT1G is a small signal bipolar junction transistor featuring NPN polarity in a 3-pin SOT-23 surface mount package. Rated for maximum collector current of 200 mA and collector-emitter voltage of 50 V, this transistor is well-suited for moderate current amplification in various electronic circuits.

The transistor exhibits a minimum DC current gain of 250 and a maximum transition frequency of 100 MHz, making it capable for signal processing and amplification at moderate frequencies. Its power dissipation capacity of 225 mW assures consistent performance within thermal limits under typical operating conditions.

This device is engineered for robustness spanning an operating temperature range from -55°C to 150°C, supporting applications in industrial, consumer electronics, and communication devices. The compact SOT-23 package with dimensions approximately 3.04 mm length, 2.64 mm width, and 1.11 mm height enables space-efficient PCB layouts.

The transistor's maximum collector base voltage of 60 V dc and maximum emitter base voltage of 6 V provide essential electrical thresholds for circuit design considerations. This component does not carry automotive industry certification such as AEC-Q101 but is extensively used in general-purpose discrete semiconductor applications.

Typical use cases include switching, amplification, and signal conditioning in electronic instrumentation, power management modules, and communication equipment. The device's specifications and form factor permit integration into both prototype and production-level printed circuit boards supporting surface mounting techniques.

Engineers and designers will find this onsemi transistor a reliable component for discrete transistor applications requiring stable performance with moderate power and frequency demands.

Maximum DC collector current is 200 mA supporting moderate load applications. Collector-emitter voltage rating of 50 V allows safe operation within medium voltage circuits. Compact 3-pin SOT-23 surface mount package suitable for volume assembly.

High DC current gain minimum of 250 enhances amplification efficiency. Maximum power dissipation of 225 mW ensures reliable heat management. Transition frequency of 100 MHz supports high frequency signal switching and amplification.

Operating temperature range spans from -55°C to 150°C ensuring stability across environments. Pin count of 3 provides standard transistor connections for easy circuit integration. NPN polarity type suitable for standard transistor circuit configurations.

Designed without automotive AEC-Q101 qualification but fulfills general-purpose applications. Explore more products in Bipolar Transistors or browse other semiconductor components on EnvMart for robust and efficient electronic device designs.

onsemi Small Signal NPN Transistor 200 mA 50 V 3-Pin SOT-23 MMBT6428LT1G
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Frequently Asked Questions

The maximum DC collector current for the MMBT6428LT1G is 200 mA, making it suitable for moderate load applications.

The collector-emitter voltage rating is 50 V, allowing safe operation within medium voltage circuits.

This transistor has a minimum DC current gain of 250, which enhances its amplification efficiency.

The maximum power dissipation for this model is 225 mW, ensuring reliable heat management during operation.

The maximum transition frequency is 100 MHz, supporting high frequency signal switching and amplification.

The operating temperature range spans from -55°C to 150°C, ensuring stability across various environments.

The SOT-23 package dimensions are approximately 3.04 mm in length, 2.64 mm in width, and 1.11 mm in height.

This model features a pin count of 3, providing standard transistor connections for easy circuit integration.

The MMBT6428LT1G uses a single transistor configuration, suitable for standard circuit designs.

The maximum collector base voltage is 60 V dc, which is an important electrical threshold for circuit design.

The maximum emitter base voltage is 6 V, providing essential electrical limits for circuit applications.

This transistor is suitable for applications such as switching, amplification, and signal conditioning in electronic instrumentation and communication equipment.

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