onsemi MMBT6428LT1G is a small signal bipolar junction transistor featuring NPN polarity in a 3-pin SOT-23 surface mount package. Rated for maximum collector current of 200 mA and collector-emitter voltage of 50 V, this transistor is well-suited for moderate current amplification in various electronic circuits.
The transistor exhibits a minimum DC current gain of 250 and a maximum transition frequency of 100 MHz, making it capable for signal processing and amplification at moderate frequencies. Its power dissipation capacity of 225 mW assures consistent performance within thermal limits under typical operating conditions.
This device is engineered for robustness spanning an operating temperature range from -55°C to 150°C, supporting applications in industrial, consumer electronics, and communication devices. The compact SOT-23 package with dimensions approximately 3.04 mm length, 2.64 mm width, and 1.11 mm height enables space-efficient PCB layouts.
The transistor's maximum collector base voltage of 60 V dc and maximum emitter base voltage of 6 V provide essential electrical thresholds for circuit design considerations. This component does not carry automotive industry certification such as AEC-Q101 but is extensively used in general-purpose discrete semiconductor applications.
Typical use cases include switching, amplification, and signal conditioning in electronic instrumentation, power management modules, and communication equipment. The device's specifications and form factor permit integration into both prototype and production-level printed circuit boards supporting surface mounting techniques.
Engineers and designers will find this onsemi transistor a reliable component for discrete transistor applications requiring stable performance with moderate power and frequency demands.
Maximum DC collector current is 200 mA supporting moderate load applications. Collector-emitter voltage rating of 50 V allows safe operation within medium voltage circuits. Compact 3-pin SOT-23 surface mount package suitable for volume assembly.
High DC current gain minimum of 250 enhances amplification efficiency. Maximum power dissipation of 225 mW ensures reliable heat management. Transition frequency of 100 MHz supports high frequency signal switching and amplification.
Operating temperature range spans from -55°C to 150°C ensuring stability across environments. Pin count of 3 provides standard transistor connections for easy circuit integration. NPN polarity type suitable for standard transistor circuit configurations.
Designed without automotive AEC-Q101 qualification but fulfills general-purpose applications. Explore more products in Bipolar Transistors or browse other semiconductor components on EnvMart for robust and efficient electronic device designs.
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