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| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 2.27mm |
| Length | 4.6mm |
| Model | MURS360BT3G |
| Width | 3.95mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 175°C |
| Package Type | DO-214AA |
| Sub Type | Silicon Junction |
| Minimum Operating Temperature | -65°C |
| Pin Count | 2 |
| Diode Configuration | Single |
| Peak Non-Repetitive Forward Surge Current Ifsm | 100A |
| Maximum Forward Voltage Vf | 1.25V |
| Peak Reverse Recovery Time trr | 75ns |
| Maximum Forward Current If | 2A |
| Maximum Peak Reverse Repetitive Voltage Vrrm | 400V |
onsemi MURS360BT3G is a Silicon Junction Switching Diode designed for reliable power rectification and switching applications. It features a single diode configuration in a compact DO-214AA surface-mount package measuring 4.6mm in length, 3.95mm in width, and 2.27mm in height. The diode supports a maximum forward continuous current of 2 amperes and can withstand peak reverse repetitive voltages up to 400 volts, making it suitable for a wide range of industrial, automotive, and electronic component applications.
Its fast peak reverse recovery time of 75 nanoseconds enables efficient switching, reducing losses in circuits such as power supplies, converters, and inverters. The device operates robustly within an ambient temperature range of -65°C to 175°C, ensuring performance stability in demanding environments. The maximum forward voltage drop is 1.25 volts, reducing conduction losses and improving energy efficiency.
The diode's peak non-repetitive forward surge current rating of 100 amperes allows it to handle transient surge currents commonly encountered during power fluctuations or switching transients. Designed primarily for surface mount assembly, the MURS360BT3G diode is ideal for integration in semiconductor switching diode applications requiring compactness, reliability, and stable electrical characteristics.
Single diode configuration designed for surface mounting. Maximum forward current of 2 amperes ensures reliable operation. Peak reverse repetitive voltage of 400 volts suitable for high voltage applications. Fast peak reverse recovery time of 75 nanoseconds enhances switching performance.
Compact DO-214AA package with dimensions 4.6mm length, 3.95mm width, and 2.27mm height. Wide operating temperature range from -65°C to 175°C supports harsh environments. Maximum forward voltage of 1.25 volts minimizes power loss during conduction.
Peak non-repetitive forward surge current of 100 amperes withstands transient conditions.
This onsemi diode fits various industrial uses including electronic components manufacturing, power supply design, and industrial automation. Its robust electrical ratings and compact package make it suitable for designers and engineers requiring dependable diode performance in switching applications. Explore more semiconductors and Switching Diodes in the Electronics & Electricals category at EnvMart.
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