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onsemi Silicon Junction Switching Diode, Single, 2 A Forward Current, 400 V Peak Reverse Voltage, DO-214AA MURS360BT3G

Category Switching Diodes Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 2.27mm
Length 4.6mm
Model MURS360BT3G
Width 3.95mm
Mount Type Surface
Maximum Operating Temperature 175°C
Package Type DO-214AA
Sub Type Silicon Junction
Minimum Operating Temperature -65°C
Pin Count 2
Diode Configuration Single
Peak Non-Repetitive Forward Surge Current Ifsm 100A
Maximum Forward Voltage Vf 1.25V
Peak Reverse Recovery Time trr 75ns
Maximum Forward Current If 2A
Maximum Peak Reverse Repetitive Voltage Vrrm 400V

Key Features

  • Single diode configuration designed for surface mounting.
  • Maximum forward current of 2 amperes ensures reliable operation.
  • Peak reverse repetitive voltage of 400 volts suitable for high voltage applications.
  • Fast peak reverse recovery time of 75 nanoseconds enhances switching performance.
  • Compact DO-214AA package with dimensions 4.6mm length, 3.95mm width, and 2.27mm height.
  • Wide operating temperature range from -65°C to 175°C supports harsh environments.
  • Maximum forward voltage of 1.25 volts minimizes power loss during conduction.
  • Peak non-repetitive forward surge current of 100 amperes withstands transient conditions.

Product Description

onsemi MURS360BT3G is a Silicon Junction Switching Diode designed for reliable power rectification and switching applications. It features a single diode configuration in a compact DO-214AA surface-mount package measuring 4.6mm in length, 3.95mm in width, and 2.27mm in height. The diode supports a maximum forward continuous current of 2 amperes and can withstand peak reverse repetitive voltages up to 400 volts, making it suitable for a wide range of industrial, automotive, and electronic component applications.

Its fast peak reverse recovery time of 75 nanoseconds enables efficient switching, reducing losses in circuits such as power supplies, converters, and inverters. The device operates robustly within an ambient temperature range of -65°C to 175°C, ensuring performance stability in demanding environments. The maximum forward voltage drop is 1.25 volts, reducing conduction losses and improving energy efficiency.

The diode's peak non-repetitive forward surge current rating of 100 amperes allows it to handle transient surge currents commonly encountered during power fluctuations or switching transients. Designed primarily for surface mount assembly, the MURS360BT3G diode is ideal for integration in semiconductor switching diode applications requiring compactness, reliability, and stable electrical characteristics.

Single diode configuration designed for surface mounting. Maximum forward current of 2 amperes ensures reliable operation. Peak reverse repetitive voltage of 400 volts suitable for high voltage applications. Fast peak reverse recovery time of 75 nanoseconds enhances switching performance.

Compact DO-214AA package with dimensions 4.6mm length, 3.95mm width, and 2.27mm height. Wide operating temperature range from -65°C to 175°C supports harsh environments. Maximum forward voltage of 1.25 volts minimizes power loss during conduction.

Peak non-repetitive forward surge current of 100 amperes withstands transient conditions.

This onsemi diode fits various industrial uses including electronic components manufacturing, power supply design, and industrial automation. Its robust electrical ratings and compact package make it suitable for designers and engineers requiring dependable diode performance in switching applications. Explore more semiconductors and Switching Diodes in the Electronics & Electricals category at EnvMart.

onsemi Silicon Junction Switching Diode, Single, 2 A Forward Current, 400 V Peak Reverse Voltage, DO-214AA MURS360BT3G
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Frequently Asked Questions

The maximum forward current rating of this diode is 2 amperes.

This model can withstand a peak reverse repetitive voltage of 400 volts.

It is housed in a compact DO-214AA package.

The dimensions of this unit are 4.6mm in length, 3.95mm in width, and 2.27mm in height.

The peak reverse recovery time is 75 nanoseconds, enhancing its switching performance.

It operates within a wide temperature range of -65°C to 175°C.

The maximum forward voltage drop is 1.25 volts, which minimizes power loss during conduction.

The diode has a peak non-repetitive forward surge current rating of 100 amperes.

This diode is designed for surface mounting.

It features a single diode configuration.

This diode is suitable for power rectification and switching applications in industrial, automotive, and electronic components.

The diode is manufactured in India.

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