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STMicroelectronics MDmesh M5 N-Channel MOSFET, 33 A, 650 V Enhancement, 3-Pin TO-263 Package STB42N65M5
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 4.6mm |
| Length | 10.75mm |
| Model | STB42N65M5 |
| Width | 10.4mm |
| Mount Type | Surface |
| Series | MDmesh M5 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-263 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 33A |
| Maximum Drain Source Voltage Vds | 650V |
| Maximum Drain Source Resistance Rds | 79mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 190W |
| Typical Gate Charge Qg @ Vgs | 100nC |
| Maximum Gate Source Voltage Vgs | -25, +25V |
| Forward Voltage Vf | 1.2V |
Key Features
- Features a low on-state resistance of 79 mΩ to minimize conduction losses.
- Designed for surface mounting in a 3-pin TO-263 package for compact assembly.
- Enhancement mode channel for reliable switching performance.
- Capable of maximum power dissipation of 190 W for high power applications.
- Operating temperature range from -55°C to 150°C for extended reliability.
- Typical gate charge of 100 nC at Vgs supports efficient switching.
- Maximum gate-source voltage tolerates ±25 V for protection against voltage spikes.
- Forward voltage drop of 1.2 V during operation enhances efficiency.
Product Description
STMicroelectronics STB42N65M5 is an N-channel MDmesh M5 power MOSFET with a maximum continuous drain current of 33 A and a maximum drain-source voltage of 650 V, packaged in a 3-pin TO-263 surface mount configuration. This enhancement mode MOSFET is engineered for efficient operation in high-power applications such as power factor correction (PFC) and pulse width modulation (PWM) topologies.
Designed to minimize on-state losses, the device features a low drain-source resistance of 79 mΩ and a typical gate charge of 100 nC at Vgs, enabling compact and energy-efficient designs suitable for consumer electronics, solar power converters, and electronic lighting control systems. Its maximum power dissipation rating of 190 W and robust operating temperature range of -55°C up to 150°C allow reliable performance in demanding industrial and commercial environments.
The MOSFET supports a wide gate-source voltage range of ±25 V, providing high voltage spike immunity. With a forward voltage drop of 1.2 V, it optimizes switching efficiency for hard switching applications.
Compact in size, with dimensions of 10.75 mm length, 10.4 mm width, and 4.6 mm height, it fits well in constrained PCB layouts. Low on-state resistance of 79 mΩ reduces power loss. Enhancement mode reliable switching with 3-pin TO-263 package.
High maximum drain current of 33 A for demanding loads. Wide operating temperatures from -55°C to 150°C for durability. Typical gate charge of 100 nC supports high switching speeds. Maximum power dissipation of 190 W for sustained operation.
Gate-source voltage tolerance of ±25 V. Designed for energy efficiency in PFC and PWM applications. Ideal for solar, power supply, and lighting control uses. Compact TO-263 package suitable for surface mounting.
This STMicroelectronics MDmesh M5 MOSFET is ideal for industrial, manufacturing, solar energy, HVAC, and commercial electronic solutions where reliable high-power switching and energy efficiency are critical.
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Frequently Asked Questions
The maximum continuous drain current for this model is 33 A.
The maximum drain-source voltage rating is 650 V.
It features a low on-state resistance of 79 mΩ, which helps minimize conduction losses.
The typical gate charge at Vgs is 100 nC, supporting efficient switching.
The dimensions are 10.75 mm in length, 10.4 mm in width, and 4.6 mm in height.
The maximum power dissipation is rated at 190 W, suitable for high power applications.
The operating temperature range is from -55°C to 150°C, allowing for extended reliability.
It is packaged in a 3-pin TO-263 surface mount configuration.
The maximum gate-source voltage tolerance is ±25 V, providing protection against voltage spikes.
This MOSFET is designed for high-power applications such as power factor correction (PFC) and pulse width modulation (PWM) topologies.
It features an N-channel enhancement mode for reliable switching performance.
The forward voltage drop during operation is 1.2 V, which enhances efficiency.
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