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STMicroelectronics MDmesh N-Channel MOSFET 11A 600V Enhancement Mode 3-Pin TO-220 STP13NM60N
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 15.75mm |
| Length | 10.4mm |
| Model | STP13NM60N |
| Width | 4.6mm |
| Mount Type | Through Hole |
| Series | MDmesh |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 11A |
| Maximum Drain Source Voltage Vds | 600V |
| Maximum Drain Source Resistance Rds | 360mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 90W |
| Typical Gate Charge Qg @ Vgs | 30nC |
| Maximum Gate Source Voltage Vgs | -25, +25V |
| Forward Voltage Vf | 1.5V |
Key Features
- Features a TO-220 through-hole package suitable for efficient heat dissipation.
- Maximum continuous drain current of 11A ensures reliable power handling.
- Maximum drain-source voltage of 600V supports high-voltage applications.
- Low maximum drain-source resistance of 360 milliohms reduces conduction losses.
- Wide operating temperature range from -55°C to 150°C for harsh environments.
- Enhancement mode channel provides efficient switching performance.
- Maximum power dissipation capacity of 90 watts enables high power applications.
- Typical gate charge of 30 nanocoulombs provides fast switching characteristics.
Product Description
STMicroelectronics STP13NM60N is a high-performance MDmesh N-Channel MOSFET designed for use in electronic power and semiconductor applications. This device features an enhancement mode channel with a maximum continuous drain current of 11 amperes and can withstand drain-source voltages up to 600 volts. Packaged in a rugged 3-pin TO-220 through-hole package, it offers excellent thermal management and ease of mounting.
The MOSFET is capable of dissipating a maximum power of 90 watts, suitable for demanding industrial, power electronics, and automotive applications. It operates effectively over a wide temperature range from -55°C to 150°C, making it reliable in harsh operating environments.
Its low maximum drain-source resistance of 360 milliohms minimizes energy losses during conduction, improving overall device efficiency. The device’s typical gate charge of 30 nanocoulombs ensures rapid switching, making it suitable for applications requiring high-speed switching.
The MOSFET supports a gate-source voltage ranging between -25 to +25 volts, providing flexibility in driving conditions. With a forward voltage drop of 1.5 volts, it guarantees effective conduction and power efficiency.
TO-220 package allows for easy mounting and excellent heat dissipation. Designed for Industrial, Power Electronic, and Automotive systems applications. Suitable for power supply circuits, motor controls, and switching regulators.
Through hole mount for reliable mechanical installation. Robust design ensures long-term durability and performance stability.
This STMicroelectronics MDmesh MOSFET unit comes with standard 3-pin connections, simplifying integration into existing circuit boards and devices. Its specifications align it well with applications requiring strong electrical endurance, thermal stability, and performance efficiency in the electronics component sector.
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Frequently Asked Questions
The maximum continuous drain current of this model is 11A, ensuring reliable power handling in various applications.
This MOSFET can withstand a maximum drain-source voltage of 600V, making it suitable for high-voltage applications.
It is packaged in a TO-220 through-hole package, which allows for efficient heat dissipation and easy mounting.
The maximum power dissipation capacity of this model is 90 watts, enabling it to handle high power applications effectively.
The typical gate charge for this model is 30 nanocoulombs, which provides fast switching characteristics.
This MOSFET operates effectively over a wide temperature range from -55°C to 150°C, making it reliable in harsh environments.
The maximum drain-source resistance is 360 milliohms, which helps to reduce conduction losses and improve efficiency.
The forward voltage drop for this MOSFET is 1.5 volts, ensuring effective conduction and power efficiency.
This model features an enhancement mode N-channel, which provides efficient switching performance.
The maximum gate-source voltage for this MOSFET ranges from -25 to +25 volts, allowing flexibility in driving conditions.
The dimensions of the STP13NM60N are 15.75 mm in height, 10.4 mm in length, and 4.6 mm in width.
This MOSFET is designed for industrial, power electronics, and automotive applications, including power supply circuits and motor controls.
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