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STMicroelectronics MDmesh M5 Type N-Channel MOSFET, 12 A, 650 V Enhancement, 3-Pin TO-252 STD16N65M5
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 2.4mm |
| Length | 6.6mm |
| Model | STD16N65M5 |
| Width | 6.2mm |
| Mount Type | Surface |
| Series | MDmesh M5 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 12A |
| Maximum Drain Source Voltage Vds | 650V |
| Maximum Drain Source Resistance Rds | 279mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 90W |
| Typical Gate Charge Qg @ Vgs | 31nC |
| Maximum Gate Source Voltage Vgs | 25V |
| Forward Voltage Vf | 1.5V |
Key Features
- Optimized for hard switching applications with low on-state losses per silicon area.
- Enhanced channel mode ensures efficient power conversion.
- Compact 3-pin TO-252 surface mount package for reliable mounting.
- Maximum power dissipation of 90 W supports high power loads.
- Operates in temperatures ranging from -55°C to 150°C for industrial stability.
- Typical gate charge of 31 nC at Vgs enables fast switching speeds.
- Maximum drain-source resistance of 279 mΩ reduces conduction losses.
- Maximum gate-source voltage of ±25 V ensures robust gate drive handling.
Product Description
STMicroelectronics STD16N65M5 MDmesh M5 Series N-Channel MOSFET provides a robust semiconductor solution designed for high-power power factor correction (PFC) and pulse width modulation (PWM) converter topologies. Rated for a maximum continuous drain current of 12 A and a maximum drain-source voltage of 650 V, this enhancement mode transistor is housed in a compact 3-pin TO-252 surface mount package.
This MOSFET features low on-state losses combined with minimal gate charge, facilitating energy-conscious operation especially in applications such as solar power converters, power supplies for consumer electronics, and electronic lighting control systems. The device's maximum power dissipation of 90 W allows for reliable operation at high load levels within its operating temperature range of -55°C to 150°C.
The typical gate charge of 31 nC at the gate-source voltage contributes to fast switching capability while maintaining efficiency. The device ensures durability and performance in demanding industrial and commercial environments, supported by a maximum gate-source voltage tolerance of 25 V and a low maximum drain-source resistance of 279 mΩ.
Its dimensions are 6.6 mm in length, 6.2 mm in width, and 2.4 mm in height, making it suitable for compact PCB designs requiring surface mount components. As part of the MDmesh M5 Series, this MOSFET is optimized to combine high performance with reliability and ease of assembly in automated manufacturing processes.
Optimized for high-power PFC and PWM topologies with low on-state losses. Compact 3-pin TO-252 surface mount package. Wide operating temperature range ensures industrial reliability. Low gate charge enables efficient switching.
High maximum power dissipation supports demanding applications. Suitable for solar power converters and electronic lighting controls. Robust voltage and current ratings for versatile industrial use.
This product is an ideal choice for engineers and designers involved in power electronics, renewable energy systems, and manufacturing automation seeking reliable, high-performance MOSFETs from a reputable semiconductor brand. Explore STMicroelectronics products and similar MOSFETs in the Electronics category at EnvMart.
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Frequently Asked Questions
The maximum continuous drain current of this model is 12 A.
This MOSFET has a maximum drain-source voltage rating of 650 V.
The dimensions of the TO-252 package are 6.6 mm in length, 6.2 mm in width, and 2.4 mm in height.
The maximum power dissipation for this MOSFET is 90 W.
The typical gate charge at Vgs for this model is 31 nC.
The maximum gate-source voltage supported is ±25 V.
This MOSFET operates within a temperature range of -55°C to 150°C.
It features a Type N enhancement channel.
The maximum drain-source resistance is 279 mΩ.
This model is optimized for high-power power factor correction (PFC) and pulse width modulation (PWM) converter topologies.
The TO-252 package has a pin count of 3.
The forward voltage for this model is 1.5 V.
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