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onsemi UniFET N-Channel MOSFET, 33 A, 250 V Enhancement, Surface Mount TO-263, 3-Pin FDB33N25TM
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 4.83mm |
| Length | 10.67mm |
| Model | FDB33N25TM |
| Width | 11.33mm |
| Mount Type | Surface |
| Series | UniFET |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-263 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 33A |
| Maximum Drain Source Voltage Vds | 250V |
| Maximum Drain Source Resistance Rds | 94mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 235W |
| Typical Gate Charge Qg @ Vgs | 36.8nC |
| Maximum Gate Source Voltage Vgs | -30, +30V |
| Forward Voltage Vf | 1.4V |
Key Features
- The MOSFET offers a maximum continuous drain current of 33 amperes.
- Its maximum drain-source voltage rating is 250 volts ensuring suitability for power applications.
- The device features a low on-resistance of 94 milliohms maximizing efficiency.
- Maximum power dissipation is rated at 235 watts for robust thermal handling.
- It supports an enhancement channel mode with a typical gate charge of 36.8 nanocoulombs at 10 volts.
- The package height is 4.83 mm, length is 10.67 mm, and width is 11.33 mm, suitable for surface mounting.
- Operating temperature ranges from -55°C to 150°C for wide environmental tolerance.
- The MOSFET includes an internal gate-source ESD diode to withstand 2000V HBM surge stress.
Product Description
onsemi FDB33N25TM is a UniFET N-Channel Enhancement Mode MOSFET designed for high voltage power switching applications. It features a maximum continuous drain current of 33 A and a drain-source voltage rating of 250 V, housed in a compact 3-pin TO-263 package suitable for surface mounting.
The MOSFET provides low on-state resistance of 94 milliohms, contributing to its efficient switching and power dissipation capability rated at 235 W. Its typical gate charge of 36.8 nC at 10 V ensures responsive switching behavior. The device can operate reliably within a wide temperature range of -55°C to 150°C, making it suitable for harsh industrial environments.
onsemi's UniFET technology integrates an internal gate-source ESD diode that allows the MOSFET to withstand electrostatic discharge events exceeding 2000 V HBM, enhancing reliability in demanding electronic circuits.
This MOSFET is suitable for a variety of industrial and commercial semiconductor applications, notably switching power converter designs such as power factor correction modules, flat panel displays, ATX power supplies, and electronic lamp ballasts.
Maximum continuous drain current: 33 A. Maximum drain-source voltage rating: 250 V. Low on-resistance: 94 mΩ. Power dissipation: 235 W. Package: Surface mount TO-263, 3-pin. Operating temperature: -55°C to 150°C. Typical gate charge: 36.8 nC at Vgs=10 V.
Internal gate-source ESD protection diode. Enhancement mode channel. Dimensions: Height 4.83 mm, Length 10.67 mm, Width 11.33 mm.
Whether for industrial power management, electronics manufacturing, or HVAC controls, the FDB33N25TM MOSFET delivers reliable performance and durability. Explore more semiconductor components on EnvMart for your electronics projects and applications.
Explore more products in our Discrete Semiconductor category.
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Frequently Asked Questions
The maximum continuous drain current of this model is 33 amperes.
It has a maximum drain-source voltage rating of 250 volts, making it suitable for high voltage applications.
This unit features a low on-resistance of 94 milliohms, which helps maximize efficiency in power applications.
The maximum power dissipation for this MOSFET is rated at 235 watts, allowing for robust thermal handling.
The dimensions of the TO-263 package are 4.83 mm in height, 10.67 mm in length, and 11.33 mm in width.
It operates reliably within a temperature range of -55°C to 150°C, suitable for harsh environments.
Yes, it includes an internal gate-source ESD diode that can withstand electrostatic discharge events exceeding 2000 V HBM.
The typical gate charge at 10 volts is 36.8 nanocoulombs.
This model features an N-channel enhancement mode, suitable for various switching applications.
The maximum gate-source voltage for this MOSFET is -30V to +30V.
This MOSFET is suitable for applications such as power factor correction modules, flat panel displays, ATX power supplies, and electronic lamp ballasts.
The TO-263 package features 3 pins.
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