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Infineon SIPMOS Type P-Channel MOSFET 250 V Maximum Drain Source Voltage 190 mA Continuous Drain Current BSS192PH6327FTSA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 1.5mm |
| Length | 4.5mm |
| Model | BSS192PH6327FTSA1 |
| Width | 2.5mm |
| Mount Type | Surface |
| Series | SIPMOS |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-89 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 190mA |
| Maximum Drain Source Voltage Vds | 250V |
| Maximum Drain Source Resistance Rds | 20Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 1W |
| Typical Gate Charge Qg @ Vgs | 4.9nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | -1.1V |
Key Features
- Supports a maximum continuous drain current of 190 mA for low-current load control.
- 250 V drain-source rating enables high-voltage switching capability.
- Has a maximum drain-source resistance of 20 Ω to reduce conduction losses.
- Typical gate charge of 4.9 nC ensures predictable switching behavior.
- Maximum gate-source voltage rating of ±20 V allows for straightforward gate drive designs.
- Power dissipation is rated at 1 W to manage heat in compact layouts.
- Operates reliably from -55 °C to 150 °C, suitable for extended temperature ranges.
- Complies with automotive standard AEC-Q101 for quality and stress screening.
Product Description
Infineon BSS192PH6327FTSA1 SIPMOS type P-channel MOSFET is engineered for reliable surface-mount power switching applications. It features a maximum drain-source voltage of 250 V and supports a continuous drain current of 190 mA while operating within a power dissipation limit of 1 W, making it suitable for low-current load control with minimized conduction losses due to its 20 Ω maximum Rds.
The device employs an enhancement-mode channel, providing predictable switching with a typical gate charge of 4.9 nC at Vgs, and supports gate-source voltages up to ±20 V. Its operating temperature range from -55 °C to 150 °C ensures performance in harsh industrial and automotive environments. This MOSFET is housed in a compact 3-pin SOT-89 surface-mount package optimized for compact PCB layouts.
Compliant with the AEC-Q101 automotive standard, this component is well suited for automotive sensor power path switching, low-power reverse polarity protection circuits, high-voltage battery management subsystems, and small relay replacements in control modules. Its surface-mount design facilitates power distribution on compact boards in industrial, automotive, and electronic systems.
Supports 190 mA continuous drain current suitable for controlled low-current applications. High 250 V drain-source voltage rating for demanding switching tasks. Enhancement mode P-channel transistor with controlled gate charge characteristics.
Wide operating temperature range from -55 °C to 150 °C for harsh environments. Compact SOT-89 3-pin package for efficient PCB integration. Meets AEC-Q101 for automotive reliability standards. Ideal for use in automotive power switching, battery management, and relay replacement.
Explore a wide range of Infineon MOSFETs and semiconductor components at EnvMart for your electronic and automotive engineering needs.
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Frequently Asked Questions
The Infineon BSS192PH6327FTSA1 supports a maximum continuous drain current of 190 mA.
This model has a maximum drain-source voltage rating of 250 V, enabling it to handle high-voltage switching applications.
The power dissipation for this MOSFET is rated at 1 W, allowing it to manage heat effectively in compact layouts.
It features a typical gate charge of 4.9 nC, which ensures predictable switching behavior.
This unit operates reliably within a temperature range of -55 °C to 150 °C, making it suitable for harsh environments.
The maximum gate-source voltage rating for this MOSFET is ±20 V, facilitating straightforward gate drive designs.
The dimensions of the SOT-89 package are 4.5 mm in length, 2.5 mm in width, and 1.5 mm in height.
It complies with the AEC-Q101 automotive standard, ensuring quality and reliability for automotive applications.
The maximum drain-source resistance for this model is 20 Ω, which helps reduce conduction losses.
This device employs an enhancement-mode P-channel transistor for controlled switching operations.
The SOT-89 package of this MOSFET has a pin count of 3.
It is suitable for automotive power switching, battery management, and small relay replacements in control modules.
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