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DiodesZetex NPN Bipolar Transistor 3 A 100 V 3-Pin SOT-23 ZXTN25100BFHTA

Category Bipolar Transistors Brand DiodesZetex Condition New

Specifications

Country of Origin Germany
Brand DiodesZetex
Height 1.1mm
Length 3mm
Model ZXTN25100BFHTA
Width 2.5mm
Mount Type Surface
Series ZXTNX
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -55°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo 100V
Minimum DC Current Gain hFE 50
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 7V
Maximum Collector Base Voltage VCBO 170V
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 1.81W
Maximum DC Collector Current Idc 3A
Transistor Configuration Single
Maximum Transition Frequency ft 160MHz

Key Features

  • Supports maximum collector current of 3 amperes.
  • Maximum collector-emitter voltage rating of 100 volts.
  • Transistor configured as a single NPN type.
  • Package type is compact SOT-23 suitable for surface mount technology.
  • Rated maximum power dissipation is 1.81 watts.
  • High transition frequency up to 160 MHz enables fast switching.
  • Wide operating temperature range from -55 to 150 degrees Celsius.
  • Automotive grade with AEC-Q101 qualification.

Product Description

DiodesZetex ZXTN25100BFHTA is a high-performance NPN bipolar transistor specially designed for applications requiring robust current handling and voltage resistance. Encased in a compact 3-pin SOT-23 surface mount package, this transistor supports a maximum collector current of 3 A and can withstand collector-emitter voltages up to 100 V. It suits general purpose amplification and switching tasks in industrial, automotive, and electronic circuit designs.

The transistor features a single NPN configuration with a minimum DC current gain (hFE) of 50, ensuring efficient signal amplification. Its maximum power dissipation rating of 1.81 W allows reliable operation while controlling thermal conditions. With a maximum transition frequency (ft) of 160 MHz, it supports high-speed switching essential for modern electronics. The wide operating temperature range from -55 °C up to 150 °C makes it suitable for harsh environments, including automotive electronics where AEC-Q101 standards are critical.

Physical dimensions of 3 mm (length) by 2.5 mm (width) and a height of 1.1 mm, coupled with surface mount technology (SMT) compatibility, enable compact PCB layouts and automated assembly line processing. Its Germany origin assures stringent quality controls and consistency in performance.

Maximum DC collector current of 3 A for demanding load applications. Maximum collector-emitter voltage of 100 V provides high voltage tolerance. Single NPN transistor configuration offers versatile electronic uses. Compact SOT-23 surface mount package supports efficient PCB integration.

Rated for power dissipation of 1.81 W to maintain thermal stability. High frequency cutoff at 160 MHz ensures rapid switching capability. Operates reliably from -55 °C to 150 °C temperature range. Automotive qualified per AEC-Q101 standards for stringent quality.

Precise physical dimensions of 3 mm x 2.5 mm x 1.1 mm for space-saving designs. Manufactured in Germany ensuring premium build quality.

This transistor is widely used in automotive electronics, industrial machinery control systems, consumer electronics, and other applications demanding reliable high current switching with compact form factor. For additional information and technical support, consider browsing the Bipolar Transistors category at EnvMart.

DiodesZetex NPN Bipolar Transistor 3 A 100 V 3-Pin SOT-23 ZXTN25100BFHTA
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Frequently Asked Questions

The maximum collector current rating of this transistor is 3 amperes.

The maximum collector-emitter voltage rating is 100 volts.

It comes in a compact SOT-23 package suitable for surface mount technology.

The rated maximum power dissipation is 1.81 watts.

The maximum transition frequency is up to 160 MHz, enabling fast switching.

It operates reliably within a temperature range from -55 °C to 150 °C.

The minimum DC current gain (hFE) is 50.

This model is configured as a single NPN transistor.

The physical dimensions are 3 mm in length, 2.5 mm in width, and 1.1 mm in height.

It is qualified per AEC-Q101 standards, making it suitable for automotive applications.

This transistor is manufactured in Germany, ensuring stringent quality controls.

It is widely used in automotive electronics, industrial machinery control systems, and consumer electronics.

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