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DiodesZetex Silicon Junction Switching Diode, Single, SOT-23, 3-Pin, 215 mA, 85 V BAS116-7-F

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DiodesZetex Silicon Junction Switching Diode, Single, SOT-23, 3-Pin, 215 mA, 85 V BAS116-7-F

Name: DiodesZetex Silicon Junction Switching Diode, Single, SOT-23, 3-Pin, 215 mA, 85 V BAS116-7-F
Brand: DiodesZetex
SKU: 129673
Price: 0.05 USD
Availability: InStock

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Category Switching Diodes Brand DiodesZetex Condition New

Specifications

Country of Origin	China
Brand	DiodesZetex
Height	1.1mm
Length	3mm
Model	BAS116-7-F
Width	1.4mm
Mount Type	Surface
Maximum Operating Temperature	150°C
Package Type	SOT-23
Sub Type	Silicon Junction
Minimum Operating Temperature	-65°C
Pin Count	3
Maximum Power Dissipation Pd	250mW
Diode Configuration	Single
Peak Non-Repetitive Forward Surge Current Ifsm	4A
Maximum Forward Voltage Vf	1.25V
Peak Reverse Recovery Time trr	3ns
Maximum Forward Current If	215mA
Maximum Peak Reverse Repetitive Voltage Vrrm	85V

Key Features

Single diode configuration with silicon junction technology.
Maximum forward current of 215 mA for reliable switching operation.
Surface mount package type SOT-23 with 3 pins for PCB mounting.
Maximum peak reverse repetitive voltage of 85 V ensures high voltage tolerance.
Peak non-repetitive forward surge current rating of 4 A for transient protection.
Low maximum forward voltage of 1.25 V allows efficient conduction.
High maximum power dissipation of 250 mW for thermal stability.
Operates in a wide temperature range from -65°C to 150°C.

Product Description

DiodesZetex BAS116-7-F is a high-quality silicon junction switching diode designed for compact and efficient electronic circuit applications. This diode features a surface mount SOT-23 package suitable for automated PCB assembly and industrial electronics manufacturing.

The single diode configuration supports a maximum forward current of 215 mA and can withstand a peak reverse repetitive voltage of 85 V, ensuring reliable performance in switching and signal processing applications. With a peak non-repetitive forward surge current of 4 A, it can handle transient spikes effectively without damage.

The diode exhibits a low maximum forward voltage of 1.25 V and a maximum power dissipation rating of 250 mW, contributing to efficient energy use and thermal stability during operation. Its extremely fast peak reverse recovery time of 3 ns enables high-speed switching in telecommunications, power supplies, and industrial control systems.

Designed to operate in harsh environments, it withstands temperatures from -65°C up to 150°C, suitable for automotive and industrial temperature ranges. Its small form factor with dimensions 3 mm in length, 1.4 mm width, and 1.1 mm height allows minimal board space consumption.

Single diode with silicon junction configuration for stable switching. Maximum forward current rating at 215 mA for dependable operation. Surface mount SOT-23 package with three pins convenient for PCB installation. Peak reverse repetitive voltage rating of 85 V protects against reverse voltages.

Peak surge current ability of 4 A handles electrical transients effectively. Max forward voltage of 1.25 V reduces power loss in circuits. 250 mW power dissipation ensures thermal reliability under load. Operational temperature range from -65°C to 150°C fits industrial uses.

Fast 3 ns peak reverse recovery time for high-frequency switching applications. Compact dimensions suitable for dense circuit layouts.

This switching diode is ideal for industrial, automotive, electronic manufacturing, and power supply applications requiring reliable, fast, and compact diode components. For more quality semiconductor devices, browse the Semiconductor category on EnvMart.

Explore more products in our Switching Diodes category.

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Frequently Asked Questions

The BAS116-7-F has a maximum forward current rating of 215 mA, ensuring reliable operation in switching applications.

This model can withstand a peak reverse repetitive voltage of 85 V, providing protection against reverse voltage conditions.

The SOT-23 package of this diode measures 3 mm in length, 1.4 mm in width, and 1.1 mm in height, making it suitable for compact circuit designs.

The maximum power dissipation rating for this diode is 250 mW, which helps maintain thermal stability during operation.

This model has a peak non-repetitive forward surge current rating of 4 A, allowing it to handle transient spikes effectively.

The BAS116-7-F operates within a temperature range of -65°C to 150°C, suitable for various industrial and automotive applications.

The maximum forward voltage for this diode is 1.25 V, which contributes to efficient conduction in circuits.

This diode has a peak reverse recovery time of 3 ns, enabling high-speed switching capabilities.

It features a single diode configuration with silicon junction technology, designed for efficient switching applications.

The SOT-23 package of this diode has a pin count of 3, facilitating easy PCB mounting.

This diode is manufactured in China, as indicated in its specifications.

This switching diode is suitable for industrial, automotive, electronic manufacturing, and power supply applications that require reliable and fast performance.