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onsemi Type P-Channel MOSFET, 15.5 A Continuous Drain Current, 60 V Maximum Drain Source Voltage, Enhancement NTD20P06LT4G

Category MOSFET Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 2.38mm
Length 6.73mm
Model NTD20P06LT4G
Width 6.22mm
Mount Type Surface
Maximum Operating Temperature 175°C
Package Type TO-252
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type Type P
Maximum Continuous Drain Current Id 15.5A
Maximum Drain Source Voltage Vds 60V
Maximum Drain Source Resistance Rds 150mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 65W
Typical Gate Charge Qg @ Vgs 15nC
Maximum Gate Source Voltage Vgs -20, +20V

Key Features

  • The device operates in enhancement mode for reliable switching performance.
  • Package features a 3-pin TO-252 surface mount design.
  • Maximum power dissipation is rated at 65 W for robust operation.
  • Operating temperature range extends from -55°C to 175°C for harsh environments.
  • Low drain-source resistance of 150 milliohms helps reduce conduction losses.
  • Typical gate charge is 15 nanocoulombs, enabling efficient gate drive.
  • Maximum gate-source voltage rating is ±20 V protecting against voltage spikes.
  • Compact dimensions with length 6.73 mm, width 6.22 mm, and height 2.38 mm.

Product Description

onsemi NTD20P06LT4G is a Type P-Channel MOSFET engineered for power management in electronic and industrial applications. It features a maximum continuous drain current of 15.5 A and maximum drain-source voltage of 60 V, suitable for efficient switching and amplification tasks in circuits.

This enhancement mode MOSFET comes in a compact TO-252 3-pin surface mount package, facilitating ease of integration into PCB layouts. Its power dissipation rating of 65 W supports high power operation, while the device maintains reliable performance across a wide temperature range from -55°C to 175°C, making it appropriate for demanding environments.

The device exhibits a low maximum drain-source resistance of 150 milliohms, minimizing conduction losses and improving overall efficiency. A typical gate charge of 15 nC allows for rapid switching, reducing energy consumption in driving circuits. The gate-source voltage tolerance of ±20 V ensures protection against voltage surges.

Physical dimensions include a length of 6.73 mm, width of 6.22 mm, and height of 2.38 mm, providing a small footprint for space-constrained designs. This MOSFET is commonly utilized in power management, switching regulators, and DC-DC converters within industrial, manufacturing, and consumer electronics sectors.

The device operates in enhancement mode for reliable switching performance. Package features a 3-pin TO-252 surface mount design. Maximum power dissipation is rated at 65 W for robust operation. Operating temperature range extends from -55°C to 175°C for harsh environments.

Low drain-source resistance of 150 milliohms helps reduce conduction losses. Typical gate charge is 15 nanocoulombs, enabling efficient gate drive. Maximum gate-source voltage rating is ±20 V protecting against voltage spikes.

Compact dimensions with length 6.73 mm, width 6.22 mm, and height 2.38 mm. Designed for surface mount applications in electronics and power circuits. Standard product without automotive certification suitable for general industrial use.

This onsemi MOSFET is ideal for applications in electronics circuitry for power amplification and switching. Its robust voltage, current, and thermal ratings enable versatile uses in manufacturing, industrial automation, and consumer electronics. Explore the Semiconductor category at EnvMart for a wide selection of MOSFET components and related devices.

onsemi Type P-Channel MOSFET, 15.5 A Continuous Drain Current, 60 V Maximum Drain Source Voltage, Enhancement NTD20P06LT4G
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Frequently Asked Questions

The maximum continuous drain current for this model is 15.5 A.

The maximum drain-source voltage for this MOSFET is 60 V.

It has a maximum power dissipation rating of 65 W.

The operating temperature range extends from -55°C to 175°C.

The maximum drain-source resistance is 150 milliohms.

The dimensions are 6.73 mm in length, 6.22 mm in width, and 2.38 mm in height.

The typical gate charge is 15 nanocoulombs (nC).

The maximum gate-source voltage rating is ±20 V.

This model uses a surface mount TO-252 package.

It operates in enhancement mode.

This MOSFET is commonly used in power management, switching regulators, and DC-DC converters.

The country of origin for this model is India.

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