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| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 2.38mm |
| Length | 6.73mm |
| Model | NTD20P06LT4G |
| Width | 6.22mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 15.5A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 150mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 65W |
| Typical Gate Charge Qg @ Vgs | 15nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
onsemi NTD20P06LT4G is a Type P-Channel MOSFET engineered for power management in electronic and industrial applications. It features a maximum continuous drain current of 15.5 A and maximum drain-source voltage of 60 V, suitable for efficient switching and amplification tasks in circuits.
This enhancement mode MOSFET comes in a compact TO-252 3-pin surface mount package, facilitating ease of integration into PCB layouts. Its power dissipation rating of 65 W supports high power operation, while the device maintains reliable performance across a wide temperature range from -55°C to 175°C, making it appropriate for demanding environments.
The device exhibits a low maximum drain-source resistance of 150 milliohms, minimizing conduction losses and improving overall efficiency. A typical gate charge of 15 nC allows for rapid switching, reducing energy consumption in driving circuits. The gate-source voltage tolerance of ±20 V ensures protection against voltage surges.
Physical dimensions include a length of 6.73 mm, width of 6.22 mm, and height of 2.38 mm, providing a small footprint for space-constrained designs. This MOSFET is commonly utilized in power management, switching regulators, and DC-DC converters within industrial, manufacturing, and consumer electronics sectors.
The device operates in enhancement mode for reliable switching performance. Package features a 3-pin TO-252 surface mount design. Maximum power dissipation is rated at 65 W for robust operation. Operating temperature range extends from -55°C to 175°C for harsh environments.
Low drain-source resistance of 150 milliohms helps reduce conduction losses. Typical gate charge is 15 nanocoulombs, enabling efficient gate drive. Maximum gate-source voltage rating is ±20 V protecting against voltage spikes.
Compact dimensions with length 6.73 mm, width 6.22 mm, and height 2.38 mm. Designed for surface mount applications in electronics and power circuits. Standard product without automotive certification suitable for general industrial use.
This onsemi MOSFET is ideal for applications in electronics circuitry for power amplification and switching. Its robust voltage, current, and thermal ratings enable versatile uses in manufacturing, industrial automation, and consumer electronics. Explore the Semiconductor category at EnvMart for a wide selection of MOSFET components and related devices.
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