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onsemi NPN Bipolar Power Transistor, 15 A, 60 V, TO-204 Package 2N3055G

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onsemi NPN Bipolar Power Transistor, 15 A, 60 V, TO-204 Package 2N3055G

Name: onsemi NPN Bipolar Power Transistor, 15 A, 60 V, TO-204 Package 2N3055G
Brand: onsemi
SKU: 123518
Price: 4.04 USD
Availability: InStock

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Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin	Mexico
Brand	onsemi
Height	20.7mm
Length	39.37mm
Model	2N3055G
Width	26.67mm
Mount Type	Through Hole
Series	2N3055
Maximum Operating Temperature	200°C
Package Type	TO-204
Minimum Operating Temperature	-65°C
Pin Count	2
Maximum Collector Emitter Voltage Vceo	60V
Minimum DC Current Gain hFE	5
Transistor Polarity	NPN
Maximum Emitter Base Voltage VEBO	7V
Maximum Collector Base Voltage VCBO	100V
Maximum Power Dissipation Pd	115W
Maximum DC Collector Current Idc	15A
Transistor Configuration	Single
Maximum Transition Frequency ft	2.5MHz
onsemi Transistor, 15 A NPN, 60 V, 2-Pin TO-204Brand	onsemi

Key Features

The transistor supports a maximum DC collector current of 15 A.
It has a maximum collector-emitter voltage rating of 60 V.
Maximum power dissipation is rated at 115 W for durability under load.
Contains 2 pins in a through-hole mounting TO-204 package for easy integration.
Minimum DC current gain (hFE) of 5 ensures efficient amplification.
Operating temperature range spans from -65°C to 200°C suitable for diverse environments.
Maximum transition frequency is 2.5 MHz, optimized for switching amplifiers.
Compact dimensions with a height of 20.7 mm, width 26.67 mm, and length 39.37 mm.

Product Description

onsemi 2N3055G is a robust NPN bipolar power transistor rated for a maximum DC collector current of 15 A and collector-emitter voltage of 60 V. It is housed in a TO-204 metal package featuring 2 pins configured for through-hole mounting, making it suitable for industrial-grade power amplifiers and switching amplifier applications.

This transistor features a maximum power dissipation capacity of 115 W, enabling sustained high-power operation within thermal limits. It offers a minimum DC current gain of 5 and a maximum transition frequency of 2.5 MHz, making it effective for medium-frequency switching use cases.

With operating temperature tolerance ranging from -65°C to 200°C, the 2N3055G transistor performs reliably under harsh environmental conditions. Its compact size with precise dimensions (height 20.7 mm, width 26.67 mm, length 39.37 mm) facilitates easy installation in electronic assemblies requiring discrete semiconductor components.

The 2N3055G (NPN) and MJ2955 (PNP) are complementary bipolar transistors commonly used in complementary push-pull amplifier circuits. This makes the 2N3055G ideal for power supply circuits, audio amplifiers, industrial automation controls, and other manufacturing equipment.

The transistor supports a maximum DC collector current of 15 A. Maximum collector-emitter voltage is rated at 60 V. Maximum power dissipation of 115 W ensures durability during high power operation. Features a minimum DC current gain (hFE) of 5.

Operating temperature range from -65°C to 200°C accommodates industrial environments. Maximum transition frequency of 2.5 MHz optimizes fast switching. 2-pin TO-204 metal package with through-hole mount type. Compact physical dimensions (20.7 mm height, 26.67 mm width, 39.37 mm length).

The product is manufactured in Mexico and is intended for use in industrial, manufacturing, laboratory, and power electronics applications. It is designed to provide reliable performance in high power transistor requirements.

Explore a broad selection of semiconductor components and Bipolar Transistors in the Electronics & Electricals category at EnvMart to find the perfect parts for your industrial projects.