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Infineon LogicFET N-Channel MOSFET 10 A 100 V Enhancement Mode 3-Pin TO-220 IRL520NPBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 8.77mm |
| Length | 10.54mm |
| Model | IRL520NPBF |
| Width | 4.69mm |
| Mount Type | Through Hole |
| Series | LogicFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 10A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 180mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 48W |
| Typical Gate Charge Qg @ Vgs | 20nC |
| Maximum Gate Source Voltage Vgs | -16, +16V |
| Forward Voltage Vf | 1.3V |
| N-channel logicFET,IRL520N 10A 100VBrand | International Rectifier |
Key Features
- This MOSFET features enhancement mode operation for precise switching control.
- Maximum continuous drain current is 10 amperes, suitable for high-power applications.
- Rated for a maximum drain-source voltage of 100 volts with low Rds(on) of 180 milliohms.
- TO-220 package supports through-hole mounting and efficient heat dissipation.
- Supports maximum power dissipation up to 48 watts ensuring robustness under load.
- Operates over a temperature range from -55°C to +175°C for reliability in varied environments.
- Typical gate charge of 20 nC allows fast switching performance.
- Maximum gate-source voltage tolerance is -16V to +16V to ensure device protection.
Product Description
Infineon IRL520NPBF LogicFET N-Channel MOSFET is a discrete semiconductor device designed for high-power switching and amplification tasks. Featuring enhancement mode operation, it provides precise control for automation, electrical, and power management applications. Housed in a 3-pin TO-220 package, the device enables effective thermal management and easy through-hole mounting.
Its specifications include a maximum continuous drain current of 10 A and a drain-source voltage of 100 V, making it suitable for robust operation in demanding industrial environments. The low on-resistance (180 mΩ) supports efficient switching with minimal power loss. With an operating temperature range from -55°C to +175°C, it ensures reliable performance under extreme temperature variations.
The typical gate charge of 20 nC facilitates rapid switching, while the maximum gate-source voltage rating of -16 V to +16 V prevents damage and guarantees operational safety. The device supports power dissipation up to 48 W allowing it to function effectively under high load conditions with proper heatsinking.
Applications for this MOSFET include power supply circuits for voltage regulation, motor control systems requiring high current capacity, industrial automation for efficient switching, and energy-efficient power management solution designs. Proper electrostatic discharge precautions should be observed during installation to maintain device integrity.
This MOSFET features enhancement mode operation for precise switching control. Maximum continuous drain current of 10 A for demanding power applications. Rated for a drain-source voltage of 100 V with low on-resistance for efficiency.
TO-220 3-pin package supports through-hole mounting and heat dissipation. Wide operating temperature range from -55°C up to 175°C ensures reliability. Low typical gate charge of 20 nC for fast switching operations. Maximum gate-source voltage swing is ±16 V to protect the device.
Ideal for power supply, motor control, industrial automation, and power management use cases. Explore more MOSFETs and semiconductor components in the Semiconductor category at EnvMart.
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Frequently Asked Questions
The maximum continuous drain current for this model is 10 A, making it suitable for high-power applications.
This MOSFET is rated for a maximum drain-source voltage of 100 V.
It features a low on-resistance of 180 milliohms, which supports efficient switching with minimal power loss.
The operating temperature range for this model is from -55°C to +175°C, ensuring reliability in varied environments.
The typical gate charge for this model is 20 nC, allowing for fast switching performance.
This MOSFET has a maximum gate-source voltage tolerance of -16 V to +16 V to ensure device protection.
It is housed in a 3-pin TO-220 package, which supports through-hole mounting and effective thermal management.
The maximum power dissipation for this MOSFET is up to 48 W, allowing it to function effectively under high load conditions with proper heatsinking.
The dimensions of this model are 10.54 mm in length, 4.69 mm in width, and 8.77 mm in height.
This model features an N-channel configuration, suitable for enhancement mode operation.
This MOSFET is suitable for applications including power supply circuits, motor control systems, and industrial automation.
Proper electrostatic discharge precautions should be observed during installation to maintain device integrity.
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