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Nexperia Silicon Junction Switching Diode 6-Pin SC-88 Package 200 mA 100 V BAV99S,115

Category Switching Diodes Brand Nexperia Condition New

Specifications

Country of Origin Malaysia
Brand Nexperia
Height 1mm
Length 2.2mm
Model BAV99S,115
Width 1.35mm
Mount Type Surface
Series BAV99
Maximum Operating Temperature 150°C
Package Type SC-88
Sub Type Silicon Junction
Minimum Operating Temperature -65°C
Pin Count 6
Maximum Power Dissipation Pd 250mW
Diode Configuration Series
Peak Non-Repetitive Forward Surge Current Ifsm 4A
Maximum Forward Voltage Vf 1.25V
Peak Reverse Recovery Time trr 4ns
Maximum Forward Current If 200mA
Maximum Peak Reverse Repetitive Voltage Vrrm 100V
Reverse voltage VR ≤ 100 V
Low capacitance Cd ≤ 1.5 pF

Key Features

  • High-speed switching with a peak reverse recovery time of 4 ns.
  • Encapsulated in a compact SC-88 surface mount package with 6 pins.
  • Maximum power dissipation of 250 mW for reliable operation.
  • Operates over a wide temperature range from -65°C to 150°C.
  • Low capacitance of up to 1.5 pF minimizes signal distortion.
  • Maximum forward voltage rating of 1.25 V to optimize power efficiency.
  • Supports maximum peak surge current of 4 A for transient conditions.
  • Designed with planar technology and hermetically sealed packaging.

Product Description

Nexperia BAV99S,115 silicon junction Switching Diodes are high-speed diodes fabricated using planar technology. The diodes are encapsulated in small surface-mount SC-88 plastic packages with 6 pins, suitable for high density circuit boards. These diodes support a maximum forward current of 200 mA and peak reverse voltage of 100 V, making them robust for typical switching applications.

With a peak reverse recovery time (trr) of 4 ns and low capacitance (Cd ≤ 1.5 pF), they provide fast switching capability and low signal distortion. The maximum forward voltage is 1.25 V, and the diodes can dissipate a maximum power of 250 mW, ensuring reliable performance under rated conditions.

These diodes operate reliably in a broad temperature range from -65°C to 150°C, which suits varied industrial and electronic applications. Their design also includes a peak non-repetitive forward surge current capacity of 4 A, accommodating transient load conditions.

Encapsulation is hermetically sealed to ensure protection against environmental factors enhancing longevity and stability. The small SC-88 package form factor combined with the device's electrical characteristics make it ideal for use in telecommunications, industrial switching circuits, general-purpose switching, and other high-speed switching requirements.

Manufactured in Malaysia, these components satisfy the needs of high-performance, compact electronic circuits and are a trusted choice for semiconductor switching diode applications in industrial and commercial electronics.

High-speed switching with fast recovery time of 4 ns. Compact 6-pin SC-88 surface mount package. Rated for maximum forward current of 200 mA. Low capacitance reduces interference and losses. Wide operating temperature range from -65°C to 150°C.

Maximum forward voltage 1.25 V ensures efficient operation. Peak surge current capability up to 4 A for surge protection. Hermetically sealed for environmental resistance. Suitable for telecommunications and industrial switching uses.

Explore more semiconductor and switching diode products on EnvMart for reliable industrial-grade electronic components.

Nexperia Silicon Junction Switching Diode 6-Pin SC-88 Package 200 mA 100 V BAV99S,115
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Frequently Asked Questions

The maximum forward current for this diode is 200 mA.

The peak reverse recovery time is 4 ns, allowing for high-speed switching capabilities.

The SC-88 package has dimensions of 2.2 mm in length, 1.35 mm in width, and 1 mm in height.

The maximum peak reverse voltage for this diode is 100 V.

The maximum power dissipation rating is 250 mW, ensuring reliable operation under rated conditions.

It operates over a wide temperature range from -65°C to 150°C.

The low capacitance value is up to 1.5 pF, which helps minimize signal distortion.

This diode uses a surface mount type for installation.

The peak non-repetitive forward surge current capacity is 4 A, accommodating transient load conditions.

This diode is manufactured in Malaysia.

The BAV99S,115 utilizes a series diode configuration.

The maximum forward voltage rating is 1.25 V, optimizing power efficiency.

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