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Infineon Isolated HEXFET Dual N and P-Channel Power MOSFET 2.7 A, 30 V, 8-Pin MSOP IRF7509TRPBF

Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Height 0.86mm
Length 3mm
Model IRF7509TRPBF
Width 3mm
Mount Type Surface
Series HEXFET
Maximum Operating Temperature 150°C
Package Type MSOP
Minimum Operating Temperature -55°C
Pin Count 8
Number of Elements per Chip 2
Channel Type Type N, Type P
Maximum Continuous Drain Current Id 2.7A
Maximum Drain Source Voltage Vds 30V
Maximum Drain Source Resistance Rds 200mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 1.25W
Typical Gate Charge Qg @ Vgs 7.5nC
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf 1.2V
Transistor Configuration Isolated

Key Features

  • Combines dual N and P-channel MOSFETs for efficient switching applications.
  • HEXFET technology delivers high performance in a compact package.
  • Enhancement mode channel type ensures reliable transistor operation.
  • Surface mount MSOP package with 8 pins facilitates easy PCB assembly.
  • Operates within a temperature range from -55°C to 150°C for robust thermal performance.
  • Maximum power dissipation of 1.25 W for effective heat management.
  • Maximum gate-source voltage rating of -20 V to +20 V protects the device.
  • Typical gate charge of 7.5 nC allows fast switching speeds.

Product Description

Infineon IRF7509TRPBF is a high-quality dual N and P-channel power MOSFET designed for space-saving, cost-effective switching solutions in circuits requiring compact and efficient components. The device integrates two HEXFET transistors, delivering a maximum continuous drain current of 2.7 A and a maximum drain-source voltage of 30 V in a surface mountable 8-pin MSOP package. Built with enhancement mode channel technology, it ensures reliable and effective transistor control. The MOSFET's thermal and electrical parameters support industrial and commercial applications ranging from power management to signal switching.

The device operates reliably across a broad temperature range from -55°C up to 150°C, suitable for demanding environments. Maximum power dissipation capability of 1.25 W allows it to handle significant load conditions smoothly, while the low 200 mΩ drain-source resistance optimizes energy efficiency by minimizing conduction losses. Additionally, the gate-source voltage tolerance ranging from -20 V to +20 V provides protection against potential voltage spikes during operation.

The compact MSOP package with precise dimensions (3 mm width, 3 mm length, 0.86 mm height) ensures easy integration onto densely populated printed circuit boards. This product does not carry automotive qualification but remains an excellent component for general-purpose and industrial power switching needs.

Combines dual N and P-channel MOSFETs to save PCB space and reduce costs. HEXFET power technology enhances switching speed and efficiency. Supports wide operating temperature range from -55°C to 150°C. 8-pin MSOP surface mount package for compact board layouts.

Handles a maximum continuous drain current of 2.7 A and 30 V drain-source voltage. Low gate charge of 7.5 nC for fast switching performance. Maximum power dissipation of 1.25 W for thermal stability. Maximum gate-source voltage rating of ±20 V ensures protection.

Physical size supports high-density electronic assembly. Ideal for power management and electronic switching applications in industrial and commercial environments.

Infineon’s IRF7509TRPBF is a reliable semiconductor solution in the Power MOSFET category, suitable for high-density circuit designs requiring effective power handling, switching speed, and compact form factor. Explore more power semiconductor products at EnvMart for your industrial and electronics manufacturing needs.

Infineon Isolated HEXFET Dual N and P-Channel Power MOSFET 2.7 A, 30 V, 8-Pin MSOP IRF7509TRPBF
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Frequently Asked Questions

The maximum continuous drain current for this model is 2.7 A.

It has a maximum drain-source voltage rating of 30 V.

This unit operates reliably within a temperature range from -55°C to 150°C.

The MOSFET comes in an 8-pin MSOP surface mount package.

It has a maximum gate-source voltage rating of -20 V to +20 V.

The typical gate charge is 7.5 nC, which allows for fast switching speeds.

The dimensions of this model are 3 mm in width, 3 mm in length, and 0.86 mm in height.

This device can handle a maximum power dissipation of 1.25 W.

It combines dual N and P-channel MOSFETs for efficient switching applications.

The maximum drain-source resistance is 200 mΩ, optimizing energy efficiency.

The transistor configuration is isolated, integrating two HEXFET transistors.

This product does not carry automotive qualification but is suitable for general-purpose and industrial applications.

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