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| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 0.86mm |
| Length | 3mm |
| Model | IRF7509TRPBF |
| Width | 3mm |
| Mount Type | Surface |
| Series | HEXFET |
| Maximum Operating Temperature | 150°C |
| Package Type | MSOP |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Number of Elements per Chip | 2 |
| Channel Type | Type N, Type P |
| Maximum Continuous Drain Current Id | 2.7A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 200mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 1.25W |
| Typical Gate Charge Qg @ Vgs | 7.5nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.2V |
| Transistor Configuration | Isolated |
Infineon IRF7509TRPBF is a high-quality dual N and P-channel power MOSFET designed for space-saving, cost-effective switching solutions in circuits requiring compact and efficient components. The device integrates two HEXFET transistors, delivering a maximum continuous drain current of 2.7 A and a maximum drain-source voltage of 30 V in a surface mountable 8-pin MSOP package. Built with enhancement mode channel technology, it ensures reliable and effective transistor control. The MOSFET's thermal and electrical parameters support industrial and commercial applications ranging from power management to signal switching.
The device operates reliably across a broad temperature range from -55°C up to 150°C, suitable for demanding environments. Maximum power dissipation capability of 1.25 W allows it to handle significant load conditions smoothly, while the low 200 mΩ drain-source resistance optimizes energy efficiency by minimizing conduction losses. Additionally, the gate-source voltage tolerance ranging from -20 V to +20 V provides protection against potential voltage spikes during operation.
The compact MSOP package with precise dimensions (3 mm width, 3 mm length, 0.86 mm height) ensures easy integration onto densely populated printed circuit boards. This product does not carry automotive qualification but remains an excellent component for general-purpose and industrial power switching needs.
Combines dual N and P-channel MOSFETs to save PCB space and reduce costs. HEXFET power technology enhances switching speed and efficiency. Supports wide operating temperature range from -55°C to 150°C. 8-pin MSOP surface mount package for compact board layouts.
Handles a maximum continuous drain current of 2.7 A and 30 V drain-source voltage. Low gate charge of 7.5 nC for fast switching performance. Maximum power dissipation of 1.25 W for thermal stability. Maximum gate-source voltage rating of ±20 V ensures protection.
Physical size supports high-density electronic assembly. Ideal for power management and electronic switching applications in industrial and commercial environments.
Infineon’s IRF7509TRPBF is a reliable semiconductor solution in the Power MOSFET category, suitable for high-density circuit designs requiring effective power handling, switching speed, and compact form factor. Explore more power semiconductor products at EnvMart for your industrial and electronics manufacturing needs.
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