Infineon N-Channel MOSFET 381 A Continuous Current 40 V Drain-Source Voltage 8-Pin SuperSO8 BSC0906NSATMA1

Infineon BSC0906NSATMA1 is a high-performance N-channel MOSFET engineered for power electronic applications requiring substantial continuous drain current and efficient switching. Rated for 381 A continuous drain current and 40 V maximum drain-source voltage, this device suits medium-voltage circuits with considerable power demands.

This MOSFET is housed in a compact SuperSO8 surface-mount package measuring 5 x 6 mm, which promotes effective thermal dissipation through a short conduction path to printed circuit board planes. It supports power dissipation of up to 81 W, enabling it to sustain elevated thermal loads during operation.

The low drain-source resistance (Rds(on)) of 0.7 mΩ minimizes conduction losses, boosting overall efficiency. The device features a typical gate charge of 80 nC at a gate-source voltage of 8 V, facilitating smooth and predictable switching performance.

Designed to operate reliably within a temperature range from −55 °C up to +150 °C, this MOSFET ensures stability across various ambient conditions. The gate-source voltage must not exceed 20 V to prevent damage to the gate oxide layer.

Forward voltage is measured at 1 V, important for evaluating voltage drops under conduction and rectification scenarios. Infineon BSC0906NSATMA1 is RoHS compliant and does not comply with specific automotive standards.

Common applications include high-current DC-DC converter stages, synchronous rectification in power modules, motor drive output stages requiring large currents, server power distribution, and voltage regulator module (VRM) designs. Its robust specifications make it versatile for industrial, telecommunications, and computing power assemblies.

Supports continuous drain current of up to 381 A for robust power applications. Maximum drain-source voltage rating of 40 V suitable for medium-voltage systems. Low drain-source resistance of 0.7 mΩ reduces conduction losses effectively.

Power dissipation capability of 81 W allows sustained high thermal loads. Typical gate charge of 80 nC enables predictable and efficient switching control. Operates safely within gate-source voltage limits up to 20 V. Wide operating temperature range from −55 °C to +150 °C for diverse environments.

Compact surface-mount SuperSO8 package (5 x 6 mm) improves thermal conduction. Forward voltage of 1 V relevant for conduction scenarios in rectification or switching. RoHS compliant, ensuring environmental and regulatory adherence.

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