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Infineon High Current N-Channel MOSFET 381A, 40V, 8-Pin SuperSO8 Package BSC059N04LS6ATMA1

Category Power MOSFET Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Model BSC059N04LS6ATMA1
Mount Type Surface
Series BSC
Maximum Operating Temperature 175°C
Package Type SuperSO8 5 x 6
Minimum Operating Temperature -55°C
Standards/Approvals RoHS
Pin Count 8
Channel Type N
Maximum Continuous Drain Current Id 381A
Maximum Drain Source Voltage Vds 40V
Maximum Drain Source Resistance Rds 0.7mΩ
Channel Mode N
Maximum Power Dissipation Pd 81W
Typical Gate Charge Qg @ Vgs 80nC
Maximum Gate Source Voltage Vgs 20V
Forward Voltage Vf 1V

Key Features

  • Supports a maximum continuous drain current of 381 amperes.
  • Maximum drain-source voltage rating of 40 volts for medium-voltage switching.
  • Low on-resistance of 0.7 milliohms reduces conduction losses at high currents.
  • Typical gate charge of 80 nanocoulombs ensures responsive and efficient switching.
  • Rated for a maximum power dissipation of 81 watts for sustained thermal loads.
  • Operates over a wide temperature range from -55 °C to 175 °C.
  • Comes in a compact SuperSO8 5 x 6 mm surface-mount package with 8 pins.
  • Maximum gate-to-source voltage of 20 volts supports robust gate drive voltage.

Product Description

The Infineon BSC059N04LS6ATMA1 is a robust N-channel MOSFET designed for high current switching and power conversion tasks. Its device architecture supports continuous drain currents up to 381 A with a maximum drain-source voltage of 40 V, making it ideal for medium-voltage power applications requiring high efficiency and low losses.

The device features an exceptionally low on-resistance (Rds(on)) of just 0.7 mΩ, contributing to minimal conduction losses and enhanced thermal management under demanding operating conditions. Coupled with a typical gate charge of 80 nC at 8 V gate drive, the MOSFET delivers rapid and efficient switching suitable for synchronous rectification and motor driver circuits.

Designed for surface mounting, it is housed in a compact SuperSO8 5 x 6 mm package with 8 pins, facilitating compact PCB layouts in power modules and converters. This MOSFET can handle a maximum power dissipation of 81 W and withstands operating temperatures from -55 °C up to 175 °C, assuring reliability over a wide range of industrial thermal environments.

The maximum gate-to-source voltage rating of 20 V allows for substantial gate drive amplitude, offering flexibility in designing gate drive circuits for optimal performance. Additionally, the device fulfills RoHS environmental standards, guaranteeing compliance with restricted substance directives.

Application areas for the BSC059N04LS6ATMA1 include high-current DC-DC converters, synchronous rectification in power supplies, motor drivers requiring high continuous current, battery protection, and power distribution systems. Its compact package and thermal capabilities make it suitable for use in compact surface-mount power modules.

Supports a maximum continuous drain current of 381 amperes. Maximum drain-source voltage rating of 40 volts. Low on-resistance reduces conduction losses under high current. Typical gate charge provides efficient switching capability.

Operating thermal range from -55 °C to 175 °C. Compact SuperSO8 5x6 mm surface-mounted package with 8 pins. Maximum gate-source voltage of 20 volts for robust gate drive. RoHS compliant for environmental safety. Discover more high-quality semiconductor devices and Power MOSFETs suitable for industrial, automotive, and power electronics applications in the EnvMart catalog.

Infineon High Current N-Channel MOSFET 381A, 40V, 8-Pin SuperSO8 Package BSC059N04LS6ATMA1
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Frequently Asked Questions

The maximum continuous drain current for this model is 381 amperes.

It has a maximum drain-source voltage rating of 40 volts.

The on-resistance is rated at 0.7 milliohms, which reduces conduction losses at high currents.

The typical gate charge is 80 nanocoulombs, ensuring responsive and efficient switching.

It is rated for a maximum power dissipation of 81 watts.

This model operates over a wide temperature range from -55 °C to 175 °C.

It comes in a compact SuperSO8 package measuring 5 x 6 mm with 8 pins.

The maximum gate-to-source voltage is 20 volts, allowing for robust gate drive voltage.

Yes, this device fulfills RoHS environmental standards, ensuring compliance with restricted substance directives.

It is suitable for high-current DC-DC converters, synchronous rectification, motor drivers, battery protection, and power distribution systems.

This model is designed for surface mounting.

This MOSFET belongs to the BSC series.

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