Infineon iPB Type N-Channel MOSFET, 273 A Continuous Drain Current, 100 V Drain Source Voltage, 3-Pin IPB048N15N5LFATMA1

Infineon IPB048N15N5LFATMA1 is a power switching N-channel MOSFET designed for high-current and high-voltage applications demanding robust electrical and thermal performance. With a maximum continuous drain current of 273 A and a drain-source voltage rating of 100 V, this device offers reliable operation under substantial load and voltage stresses.

Its surface-mount TO-263 package facilitates efficient mounting and heat dissipation on PCBs engineered for thermal management. The low drain-source resistance of 1.7 milliohms reduces conduction losses, improving overall system efficiency. The device supports a maximum power dissipation of 81 W, allowing sustained high-power operation in demanding industrial environments.

The MOSFET operates safely with a gate-source voltage maximum of 20 V to prevent device damage and features a typical gate charge of 80 nC for predictable and stable switching. It functions reliably over an ambient temperature range of -55°C to 175°C, making it suitable for applications exposed to harsh thermal environments.

This component includes an intrinsic diode with a forward voltage drop of 1.2 V, reducing conduction loss and enhancing electrical efficiency. RoHS compliance ensures environmentally friendly usage.

Applications encompass high-current power supplies, motor drive stages, server power distribution, telecom rectifiers, inverters, and other industrial switching systems where performance and durability at elevated currents and voltages are critical.

Rated for 273 A maximum continuous drain current to handle heavy loads. Operates at a maximum drain-source voltage of 100 V suitable for robust power applications. Features a low 1.7 mΩ drain-source resistance to reduce conduction losses.

Supports a maximum power dissipation of 81 W ensuring efficient thermal management. Includes a 20 V maximum gate-source voltage to protect gate integrity during operation. Typical gate charge of 80 nC enables controlled switching energy management.

Designed for operation between -55°C and 175°C for wide temperature application ranges. Packaged in TO-263 for reliable surface mounting on heat-managed PCBs. Forward voltage drop of 1.2 V minimizes diode conduction losses for efficient circuit performance.

Compliant with RoHS standards for environmental safety and reduced hazardous substances. Explore related Power MOSFETs and semiconductor components on EnvMart for your industrial and electronic design needs.