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Infineon iPB Type N-Channel MOSFET 273A 100V TO-263 Surface Mount 3-Pin IPB60R045P7ATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | IPB60R045P7ATMA1 |
| Mount Type | Surface |
| Series | iPB |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-263 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 273A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 1.7mΩ |
| Channel Mode | N |
| Maximum Power Dissipation Pd | 81W |
| Typical Gate Charge Qg @ Vgs | 80nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.2V |
Key Features
- Super junction MOSFET design ensures high efficiency and low conduction losses.
- Suitable for hard and soft switching applications including PFC and LLC power supplies.
- Integrated gate resistor provides enhanced switching performance and robustness.
- Maximum power dissipation is rated at 81W with typical gate charge of 80nC at Vgs.
- Robust operation over a temperature range of -55°C to 175°C.
- Meets RoHS compliance and automotive standard AEC-Q101 for quality assurance.
- Features excellent ESD robustness with withstand capability greater than 2kV (HBM).
- Compact surface mount design with 3-pin TO-263 package allows easy PCB integration.
Product Description
Infineon IPB60R045P7ATMA1 is a high-performance iPB series N-Channel MOSFET designed for industrial, automotive, and power management applications. With a maximum continuous drain current of 273A and a maximum drain-source voltage of 100V, this MOSFET is capable of handling significant power loads efficiently.
Constructed on the 7th generation CoolMOS platform, it balances superior conduction losses with a low gate charge of 80nC, enhancing switching speed and overall efficiency in power supply and motor control circuits.
The device includes an integrated gate resistor, making it suitable for various switching environments including hard and soft switching in PFC (Power Factor Correction) and LLC resonant converters. Its TO-263 surface mount package with 3 pins supports reliable and compact PCB mounting.
Engineered for durability, the MOSFET can operate from -55°C up to 175°C and withstands gate-source voltages up to ±20V. The maximum power dissipation is rated at 81W, making it robust for demanding applications.
High efficiency super junction structure reduces conduction and switching losses. Enhanced commutation ruggedness for reliable hard and soft switching. ESD robustness greater than 2kV (HBM) ensures device protection. Compliance with RoHS and automotive standard AEC-Q101 confirms quality and environmental standards.
Compact TO-263 package suitable for surface mounting enhances assembly flexibility. Applications include industrial motor drives, automotive electronics, power supply modules, and energy-efficient converters requiring high current and low voltage handling.
Explore EnvMart’s extensive selection of semiconductor devices for advanced electronic design projects, including other MOSFETs and power management components from Infineon and renowned global brands.
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Frequently Asked Questions
The maximum continuous drain current for the IPB60R045P7ATMA1 is rated at 273A.
This MOSFET has a maximum drain-source voltage of 100V.
The typical gate charge at Vgs is 80nC.
The maximum power dissipation for this model is rated at 81W.
It can operate in a temperature range from -55°C to 175°C.
The IPB60R045P7ATMA1 comes in a TO-263 surface mount package with 3 pins.
This MOSFET meets the automotive standard AEC-Q101 for quality assurance.
It features excellent ESD robustness with a withstand capability greater than 2kV (HBM).
It is suitable for hard and soft switching applications, including PFC and LLC power supplies.
The maximum gate-source voltage is rated at ±20V.
The forward voltage for this device is 1.2V.
The country of origin for this MOSFET is India.
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