Previous
Next
Share
Free Delivery in India | Lowest Global Shipping Charges
24/7 Customer Support
Shop with confidence knowing that our 24/7 Customer Support is always available to assist with any inquiries
Save up to 28% with GST Input
Avail maximum benefits from input tax mechanism on all your Business Invoices. Get GST Invoices on your business purchases. And 0% Taxes on all worldwide deliveries
# Lowest Price Challenge
If you find this product anywhere at lower cost than us. Call us and we will not only match the price but also give a complimentary coupon
100% Original Products
Shop with assurance, as each product we offer is 100% original, ensuring quality and authenticity with every purchase
Vishay SIH Type N-Channel Power MOSFET, 20 A, 850 V, TO-247AC Package SIHG24N80AEF-GE3
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Model | SIHG24N80AEF-GE3 |
| Mount Type | Through Hole |
| Series | SIH |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-247AC |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 20A |
| Maximum Drain Source Voltage Vds | 850V |
| Maximum Drain Source Resistance Rds | 0.17Ω |
| Maximum Power Dissipation Pd | 208W |
| Typical Gate Charge Qg @ Vgs | 60nC |
| Maximum Gate Source Voltage Vgs | 30V |
Key Features
- Maximum continuous drain current of 20 amperes for high power applications.
- High maximum drain-source voltage of 850 volts suitable for demanding circuits.
- Low drain-source resistance of 0.17 ohms to reduce conduction losses.
- TO-247AC through-hole package ensures easy mounting and heat dissipation.
- Maximum power dissipation capability of 208 watts to handle significant thermal loads.
- Wide operating temperature range from -55°C up to 150°C for reliable performance.
- Maximum gate-source voltage of ±30 volts for control flexibility.
- Typical gate charge of 60 nanocoulombs enabling efficient switching performance.
Product Description
Vishay SIHG24N80AEF-GE3 is a high-performance Type N-Channel Power MOSFET designed to deliver a maximum continuous drain current of 20 amperes and support a drain-source voltage of up to 850 volts. Packaged in the robust TO-247AC form factor, this device is ideal for applications requiring efficient power switching and thermal management, such as server power supplies, telecommunications infrastructure, and switch mode power supplies (SMPS).
The device features a low on-resistance of 0.17 ohms, which minimizes conduction losses and improves overall efficiency. With a maximum power dissipation of 208 watts, it can handle substantial power levels while maintaining reliable operation over a wide ambient temperature range from -55°C to 150°C.
The gate-source voltage rating of ±30 volts provides the necessary control range for stable switching, and the typical gate charge of 60 nanocoulombs allows for fast switching speeds, reducing switching losses. This MOSFET complies with RoHS directives, ensuring it meets environmental and safety requirements.
This component is part of Vishay's SIH series, which is optimized for high efficiency in applications including power factor correction (PFC) power supplies and other industrial power conversion systems.
Maximum continuous drain current of 20 A. Drain-source voltage rating of 850 V. Low on-resistance of 0.17 Ω for efficient conduction. TO-247AC package for reliable mounting and heat dissipation. High power dissipation capability of 208 W.
Operating temperature range from -55°C to 150°C. Maximum gate-source voltage of ±30 V. Typical gate charge 60 nC for fast switching. RoHS compliant for environmental safety. Suitable for server and telecom power supplies, SMPS, and PFC circuits.
For system designers working in industrial, laboratory, and commercial electronics sectors, the Vishay SIHG24N80AEF-GE3 MOSFET provides reliable, efficient switching performance and thermal robustness. This product supports high current and voltage handling while maintaining low on-state resistance to enhance overall system efficiency.
Explore more power semiconductors and discrete semiconductor products within EnvMart’s extensive Electronics & Electricals catalog to find complementary components for power supply and conversion needs.
Explore more products in our MOSFETs category.
Looking to purchase in bulk?
- Purchase item in bulk quantity
- Get best price for your business
Frequently Asked Questions
The maximum continuous drain current for the Vishay SIHG24N80AEF-GE3 is 20 amperes.
This model has a maximum drain-source voltage rating of 850 volts.
The on-resistance of the SIHG24N80AEF-GE3 is 0.17 ohms, which helps reduce conduction losses.
It has a maximum power dissipation capability of 208 watts.
The operating temperature range for this MOSFET is from -55°C to 150°C.
This model is packaged in a TO-247AC form factor, suitable for through-hole mounting.
The maximum gate-source voltage for the SIHG24N80AEF-GE3 is ±30 volts.
The typical gate charge for this model is 60 nanocoulombs.
This MOSFET is suitable for applications such as server power supplies, telecommunications infrastructure, and switch mode power supplies (SMPS).
Yes, the SIHG24N80AEF-GE3 complies with RoHS directives, ensuring it meets environmental and safety requirements.
This model features a Type N channel, optimized for efficient power switching.
The Vishay SIHG24N80AEF-GE3 is manufactured in India.
Related Products
Other Products from this brand
$1.99
$1.93
-3%
New
$1.69
$1.64
-3%
New
$1.82
$1.77
-3%
New
$1.54
$1.50
-3%
New
$0.30
$0.29
-3%
New
Recently Viewed Products
Quantity
Global Payments 140+ Countries
Global Shipping Fedex/UPS/DHL/Aramex/
BlueDart/Delhivery/DP World
24/7 Customer Support Email/Chat/Telephonic Support
Comments (0)
Your review appreciation cannot be sent
Report comment
Report sent
Your report cannot be sent