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Vishay SIH Type N-Channel Power MOSFET, 20 A, 850 V, TO-247AC Package SIHG24N80AEF-GE3

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Vishay SIH Type N-Channel Power MOSFET, 20 A, 850 V, TO-247AC Package SIHG24N80AEF-GE3

Name: Vishay SIH Type N-Channel Power MOSFET, 20 A, 850 V, TO-247AC Package SIHG24N80AEF-GE3
Brand: Vishay
SKU: 114416
Price: 20.22 USD
Availability: InStock

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Category MOSFETs Brand Vishay Condition New

Specifications

Country of Origin	India
Brand	Vishay
Model	SIHG24N80AEF-GE3
Mount Type	Through Hole
Series	SIH
Maximum Operating Temperature	150°C
Package Type	TO-247AC
Minimum Operating Temperature	-55°C
Standards/Approvals	RoHS
Channel Type	Type N
Maximum Continuous Drain Current Id	20A
Maximum Drain Source Voltage Vds	850V
Maximum Drain Source Resistance Rds	0.17Ω
Maximum Power Dissipation Pd	208W
Typical Gate Charge Qg @ Vgs	60nC
Maximum Gate Source Voltage Vgs	30V

Key Features

Maximum continuous drain current of 20 amperes for high power applications.
High maximum drain-source voltage of 850 volts suitable for demanding circuits.
Low drain-source resistance of 0.17 ohms to reduce conduction losses.
TO-247AC through-hole package ensures easy mounting and heat dissipation.
Maximum power dissipation capability of 208 watts to handle significant thermal loads.
Wide operating temperature range from -55°C up to 150°C for reliable performance.
Maximum gate-source voltage of ±30 volts for control flexibility.
Typical gate charge of 60 nanocoulombs enabling efficient switching performance.

Product Description

Vishay SIHG24N80AEF-GE3 is a high-performance Type N-Channel Power MOSFET designed to deliver a maximum continuous drain current of 20 amperes and support a drain-source voltage of up to 850 volts. Packaged in the robust TO-247AC form factor, this device is ideal for applications requiring efficient power switching and thermal management, such as server power supplies, telecommunications infrastructure, and switch mode power supplies (SMPS).

The device features a low on-resistance of 0.17 ohms, which minimizes conduction losses and improves overall efficiency. With a maximum power dissipation of 208 watts, it can handle substantial power levels while maintaining reliable operation over a wide ambient temperature range from -55°C to 150°C.

The gate-source voltage rating of ±30 volts provides the necessary control range for stable switching, and the typical gate charge of 60 nanocoulombs allows for fast switching speeds, reducing switching losses. This MOSFET complies with RoHS directives, ensuring it meets environmental and safety requirements.

This component is part of Vishay's SIH series, which is optimized for high efficiency in applications including power factor correction (PFC) power supplies and other industrial power conversion systems.

Maximum continuous drain current of 20 A. Drain-source voltage rating of 850 V. Low on-resistance of 0.17 Ω for efficient conduction. TO-247AC package for reliable mounting and heat dissipation. High power dissipation capability of 208 W.

Operating temperature range from -55°C to 150°C. Maximum gate-source voltage of ±30 V. Typical gate charge 60 nC for fast switching. RoHS compliant for environmental safety. Suitable for server and telecom power supplies, SMPS, and PFC circuits.

For system designers working in industrial, laboratory, and commercial electronics sectors, the Vishay SIHG24N80AEF-GE3 MOSFET provides reliable, efficient switching performance and thermal robustness. This product supports high current and voltage handling while maintaining low on-state resistance to enhance overall system efficiency.

Explore more power semiconductors and discrete semiconductor products within EnvMart’s extensive Electronics & Electricals catalog to find complementary components for power supply and conversion needs.

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