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| Country of Origin | India |
|---|---|
| Brand | Microchip |
| Model | TN5325 |
| Mount Type | Through Hole |
| Series | TN5325 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-92 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 10.3A |
| Maximum Drain Source Voltage Vds | 650V |
| Maximum Drain Source Resistance Rds | 8Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 140W |
| Maximum Gate Source Voltage Vgs | 30V |
| Forward Voltage Vf | 1.8V |
Microchip TN5325 Type N-Channel MOSFET is a high-performance enhancement mode transistor designed for industrial, electronic component assemblies, and power management applications. Featuring a vertical DMOS structure with a silicon gate manufacturing process, this device combines the power capabilities of bipolar transistors with the high input impedance and positive temperature coefficient typical of MOS devices.
This device ensures reliable, thermally stable operation free from thermal runaway or secondary breakdown. Its low threshold voltage (maximum 2 V) and high gain make it suitable for switching applications requiring rapid response times.
The MOSFET operates efficiently over a broad temperature range from -55°C to 150°C, supporting robust industrial and electronic environments. It can continuously handle a drain current of 10.3 A and withstand a maximum drain-source voltage of 650 V, making it well-suited for power switching.
Key electrical characteristics include a maximum power dissipation of 140 W, forward voltage of 1.8 V, and a maximum gate-source voltage of 30 V. The package is a standard 3-pin TO-92 through-hole mount, providing compatibility with various PCB designs and manufacturing processes.
Fast switching performance is guaranteed by a rise time of 15 nanoseconds, turn-off delay of 25 nanoseconds, and fall time of 25 nanoseconds, making it optimal for responsive electronic control circuits.
This MOSFET features a low threshold voltage with a maximum of 2 V. It offers high input impedance and high gain for efficient switching. The device includes a vertical DMOS structure for improved power handling. Thermally stable with no thermal runaway or secondary breakdown risks.
Provides fast switching with rise time of 15 ns and turn-off delay of 25 ns. Capable of continuous power dissipation up to 140 W. Operating temperature range from -55°C up to 150°C. Maximum gate-source voltage rating of 30 V for enhanced control.
Through-hole mount with 3 pins in a TO-92 package for ease of installation.
This device is suitable for use in industrial electronics, power management systems, laboratory equipment, and manufacturing machinery requiring reliable power switching and control.
Explore more semiconductor products and MOSFET options on EnvMart for your industrial and electronic component needs.
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