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Microchip Type N-Channel Enhancement MOSFET, 10.3 A, 650 V, 3-Pin TO-92 TN5325

Category MOSFET Brand Microchip Condition New

Specifications

Country of Origin India
Brand Microchip
Model TN5325
Mount Type Through Hole
Series TN5325
Maximum Operating Temperature 150°C
Package Type TO-92
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type Type N
Maximum Continuous Drain Current Id 10.3A
Maximum Drain Source Voltage Vds 650V
Maximum Drain Source Resistance Rds 8Ω
Channel Mode Enhancement
Maximum Power Dissipation Pd 140W
Maximum Gate Source Voltage Vgs 30V
Forward Voltage Vf 1.8V

Key Features

  • This MOSFET features a low threshold voltage with a maximum of 2 V.
  • It offers high input impedance and high gain for efficient switching.
  • The device includes a vertical DMOS structure for improved power handling.
  • Thermally stable with no thermal runaway or secondary breakdown risks.
  • Provides fast switching with rise time of 15 ns and turn-off delay of 25 ns.
  • Capable of continuous power dissipation up to 140 W.
  • Operating temperature range from -55°C up to 150°C.
  • Maximum gate-source voltage rating of 30 V for enhanced control.

Product Description

Microchip TN5325 Type N-Channel MOSFET is a high-performance enhancement mode transistor designed for industrial, electronic component assemblies, and power management applications. Featuring a vertical DMOS structure with a silicon gate manufacturing process, this device combines the power capabilities of bipolar transistors with the high input impedance and positive temperature coefficient typical of MOS devices.

This device ensures reliable, thermally stable operation free from thermal runaway or secondary breakdown. Its low threshold voltage (maximum 2 V) and high gain make it suitable for switching applications requiring rapid response times.

The MOSFET operates efficiently over a broad temperature range from -55°C to 150°C, supporting robust industrial and electronic environments. It can continuously handle a drain current of 10.3 A and withstand a maximum drain-source voltage of 650 V, making it well-suited for power switching.

Key electrical characteristics include a maximum power dissipation of 140 W, forward voltage of 1.8 V, and a maximum gate-source voltage of 30 V. The package is a standard 3-pin TO-92 through-hole mount, providing compatibility with various PCB designs and manufacturing processes.

Fast switching performance is guaranteed by a rise time of 15 nanoseconds, turn-off delay of 25 nanoseconds, and fall time of 25 nanoseconds, making it optimal for responsive electronic control circuits.

This MOSFET features a low threshold voltage with a maximum of 2 V. It offers high input impedance and high gain for efficient switching. The device includes a vertical DMOS structure for improved power handling. Thermally stable with no thermal runaway or secondary breakdown risks.

Provides fast switching with rise time of 15 ns and turn-off delay of 25 ns. Capable of continuous power dissipation up to 140 W. Operating temperature range from -55°C up to 150°C. Maximum gate-source voltage rating of 30 V for enhanced control.

Through-hole mount with 3 pins in a TO-92 package for ease of installation.

This device is suitable for use in industrial electronics, power management systems, laboratory equipment, and manufacturing machinery requiring reliable power switching and control.

Explore more semiconductor products and MOSFET options on EnvMart for your industrial and electronic component needs.

Microchip Type N-Channel Enhancement MOSFET, 10.3 A, 650 V, 3-Pin TO-92 TN5325
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Frequently Asked Questions

The TN5325 MOSFET can handle a maximum continuous drain current of 10.3 A.

This model has a maximum drain-source voltage rating of 650 V.

It is capable of continuous power dissipation up to 140 W.

The operating temperature range for the TN5325 is from -55°C to 150°C.

The maximum gate-source voltage rating for this model is 30 V.

This MOSFET comes in a standard 3-pin TO-92 package, suitable for through-hole mounting.

The TN5325 has a rise time of 15 nanoseconds for fast switching performance.

The forward voltage for this model is 1.8 V.

The TN5325 is a Type N-channel enhancement MOSFET.

The maximum drain-source resistance for the TN5325 is 8 Ω.

This model is suitable for industrial electronics, power management systems, and laboratory equipment requiring reliable power switching.

The TN5325 features a vertical DMOS structure, which improves its power handling capabilities.

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