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Infineon IPD Type P-Channel MOSFET 13.7 A 100 V Enhancement 3-Pin TO-252 IPD19DP10NMATMA1

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Infineon IPD Type P-Channel MOSFET 13.7 A 100 V Enhancement 3-Pin TO-252 IPD19DP10NMATMA1

Name: Infineon IPD Type P-Channel MOSFET 13.7 A 100 V Enhancement 3-Pin TO-252 IPD19DP10NMATMA1
Brand: Infineon
SKU: 112771
Price: 20.22 USD
Availability: InStock

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Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin	India
Brand	Infineon
Height	2.41mm
Length	6.73mm
Model	IPD19DP10NMATMA1
Width	6.22mm
Mount Type	Surface
Series	IPD
Maximum Operating Temperature	175°C
Package Type	TO-252
Minimum Operating Temperature	-55°C
Pin Count	3
Channel Type	Type P
Maximum Continuous Drain Current Id	13.7A
Maximum Drain Source Voltage Vds	100V
Maximum Drain Source Resistance Rds	186mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	83W
Typical Gate Charge Qg @ Vgs	-36nC
Maximum Gate Source Voltage Vgs	20V
Forward Voltage Vf	-1.2V

Key Features

This enhancement-mode MOSFET features a low Rds(on) of 186 milliohms for efficient switching.
Designed for surface mount and delivers a maximum power dissipation of 83 watts.
Operates reliably within a temperature range of -55°C to 175°C for harsh environments.
Low gate charge of 36 nC enables fast switching performance.
Incorporates avalanche ruggedness suitable for battery management and industrial automation.
Compact dimensions of 6.73 mm length, 6.22 mm width, and 2.41 mm height.
Supports a maximum gate-source voltage of 20 V and forward voltage of -1.2 V.
No automotive standard approval but built to high technical standards for demanding applications.

Product Description

Infineon IPD19DP10NMATMA1 is a Type P-Channel power MOSFET in a compact 3-Pin TO-252 package rated for a maximum continuous drain current of 13.7 A and a drain-source voltage of 100 V. This enhancement-mode MOSFET features low on-resistance (186 mΩ) and low gate charge (36 nC), making it suitable for efficient power switching applications.

The device is designed for surface mount placement and supports power dissipation up to 83 watts. Its operational temperature range from -55°C to 175°C ensures reliability under varying industrial conditions. With a maximum gate-source voltage rating of 20 V and a forward voltage of -1.2 V, it provides robust performance in battery management, load switching, and reverse polarity protection circuits.

This MOSFET's easy interface to microcontrollers, fast switching characteristics, and avalanche ruggedness make it ideal for industrial automation and battery management applications that demand high-quality and high-efficiency devices.

The compact form factor, with dimensions 6.73 mm length, 6.22 mm width, and 2.41 mm height, allows for efficient PCB layout optimization. Enhancement-mode P-Channel MOSFET for efficient power switching. Low Rds(on) reduces conduction losses and improves system efficiency.

Wide operating temperature range suitable for harsh environments. Low gate charge ensures fast switching and reduced switching losses. Avalanche ruggedness enhances device robustness under transient conditions. Compact TO-252 package supports space-constrained designs.

Applications include battery management, industrial automation, and load switching. Explore more semiconductor products like this in EnvMart's MOSFET category for your electronic design and industrial automation needs.