Infineon MOSFET AG-EASY1B-1 with CoolSiC Schottky Diode, 20mW Power Dissipation, Integrated NTC DDB2U40N12W1RFB11BPSA1

Infineon DDB2U40N12W1RFB11BPSA1 is a MOSFET module featuring the AG-EASY1B-1 package type designed for high reliability and thermal efficiency. The module integrates a CoolSiC Schottky diode alongside an NTC temperature sensor embedded to monitor temperature effectively, enhancing system safety and thermal management.

This MOSFET module supports a maximum power dissipation of 20mW, making it ideal for electronic applications requiring low power but high precision control. It operates within a temperature range of -40°C to 150°C, maintaining performance even in demanding industrial environments.

Constructed on an Al2O3 substrate, this device ensures low thermal resistance, facilitating better heat dissipation and longevity. The screw mount type enhances mechanical stability, allowing robust installation into industrial and automotive electronic assemblies.

Physical dimensions are 42.5mm in length and 62.8mm in height, allowing integration into compact spaces in electronic hardware. The device meets multiple standards including IEC24720, IEC16022, IEC8859-1, and meets automotive safety requirements under IEC 60747, ensuring compliance with industry norms.

Forward voltage is rated at 1.85V, suitable for precise switching and efficient power management in semiconductor circuit designs. The module package and advanced components are engineered for applications across industrial electronics, automotive control systems, power management, and embedded systems requiring rugged and reliable MOSFET solutions.

Incorporates CoolSiC Schottky diode for efficient switching performance. Supports maximum power dissipation of 20mW, suitable for low power applications. Operating temperature range from -40°C to 150°C ensures reliability in harsh environments.

Constructed on Al2O3 substrate to deliver low thermal resistance. Designed with a screw mount type for secure installation. Dimensions include 42.5mm length and 62.8mm height, allowing compact integration. Complies with IEC24720, IEC16022, IEC8859-1 standards and automotive standard IEC 60747.

Forward voltage rating is 1.85V for optimized electrical characteristics.

This Infineon MOSFET module is well-suited for manufacturing, automotive, electronic equipment, and power semiconductor assemblies requiring durable, compact and thermally efficient components. Browse the MOSFET category on EnvMart for more advanced semiconductor devices to meet industrial and laboratory application needs.