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Infineon IPA Type N-Channel MOSFET 46 A 100 V Enhancement Mode 3-Pin TO-220FP IPA082N10NF2SXKSA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | IPA082N10NF2SXKSA1 |
| Mount Type | Through Hole |
| Series | IPA |
| Package Type | TO-220FP |
| Pin Count | 3 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 46A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 8.1mΩ |
| Channel Mode | Enhancement |
Key Features
- This MOSFET operates in enhancement mode for efficient switching applications.
- Designed for through-hole mounting, compatible with various PCB layouts.
- Maximum drain-source resistance (Rds) of 8.1 milliohms ensures low conduction losses.
- Features a compact 3-pin TO-220FP package for effective heat management.
- Suitable for power management and switching in electronic and industrial applications.
- Non-automotive standard device with reliable semiconductor performance.
- Ideal for industrial power and discrete semiconductor solutions.
Product Description
Infineon IPA082N10NF2SXKSA1 is a Type N-Channel MOSFET designed for high-efficiency switching and power management in electronic circuits. This enhancement mode device supports a maximum continuous drain current of 46 A and a maximum drain-source voltage of 100 V, housed in a 3-pin TO-220FP package suitable for through-hole PCB mounting.
With a low maximum drain-source resistance of 8.1 mΩ, the MOSFET ensures minimal power loss during conduction, making it ideal for applications such as power supplies, motor control, and industrial power electronics. The device does not comply with automotive standards but serves a broad range of industrial and electronic component needs effectively.
Its rugged package provides thermal efficiency and mechanical stability for demanding environments in semiconductor discrete component categories. The three-pin configuration simplifies integration into circuit designs requiring reliable switching elements.
This MOSFET operates in enhancement mode for efficient switching applications. Designed for through-hole mounting, compatible with various PCB layouts. Maximum drain-source resistance (Rds) of 8.1 milliohms ensuring low conduction losses.
Compact 3-pin TO-220FP package provides effective heat dissipation. Maximum continuous drain current of 46 A supports high current loads. Maximum drain-source voltage of 100 V suitable for medium voltage applications. Non-automotive standard device optimal for industrial and power management.
This product belongs to the semiconductor MOSFET category, widely used in industrial, power electronics, manufacturing, and electronic component applications. Infineon offers reliable and high-performance components meeting technical demands for discrete transistor solutions.
Explore more Infineon semiconductor products and MOSFETs in the EnvMart catalog for advanced electronic component sourcing and power management solutions.
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Frequently Asked Questions
The maximum continuous drain current for the Infineon IPA082N10NF2SXKSA1 is 46 A.
This model has a maximum drain-source voltage rating of 100 V.
The maximum drain-source resistance (Rds) is 8.1 milliohms, ensuring low conduction losses.
It is housed in a compact 3-pin TO-220FP package designed for through-hole mounting.
This model features a Type N-channel configuration.
It is suitable for power management and switching applications in electronic and industrial settings.
No, this device is a non-automotive standard MOSFET.
The channel mode of the IPA082N10NF2SXKSA1 is enhancement mode.
The Infineon IPA082N10NF2SXKSA1 is manufactured in India.
The low drain-source resistance of 8.1 mΩ minimizes power loss during conduction, enhancing efficiency.
This model is designed for through-hole mounting, making it compatible with various PCB layouts.
The compact TO-220FP package provides effective heat management, ensuring thermal efficiency and mechanical stability.
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