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Infineon N-Channel IGBT Single Transistor IC 80 A 1200 V 5 kW TO-247 Through Hole IKY40N120CS6XKSA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 5.1mm |
| Length | 41.2mm |
| Model | IKY40N120CS6XKSA1 |
| Width | 15.9mm |
| Mount Type | Through Hole |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -40°C |
| Standards/Approvals | RoHS |
| Pin Count | 3 |
| Maximum Continuous Collector Current Ic | 80A |
| Maximum Collector Emitter Voltage Vceo | 1200V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.15V |
| Channel Type | Type N |
| Maximum Power Dissipation Pd | 5kW |
| Maximum Gate Emitter Voltage VGEO | 25 V |
Key Features
- Maximum continuous collector current of 80 amperes.
- Collector emitter voltage rated at 1200 volts.
- Maximum power dissipation capability of 5 kilowatts.
- Encapsulated in a TO-247 package with through-hole mount.
- Features a fast recovery, soft anti-parallel diode for efficient switching.
- Low gate charge reducing EMI and switching losses.
- Maximum operating temperature up to 175 degrees Celsius.
- Designed for reliable performance in power electronic applications.
Product Description
Infineon IKY40N120CS6XKSA1 is a Type N-Channel IGBT Single Transistor IC designed for robust power switching applications. It supports a maximum continuous collector current of 80 A and a collector emitter voltage of 1200 V, ensuring high performance.
This transistor features a 3-pin TO-247 package suitable for through-hole mounting, providing ease of integration into electronic circuits.
The device includes a soft, fast recovery anti-parallel diode with excellent ruggedness and temperature stability, optimized for low electromagnetic interference (EMI) and minimal switching losses.
The maximum power dissipation of 5 kW allows usage in demanding industrial, automotive, and power management scenarios. Its operating temperature range is from -40°C to 175°C, making it suitable for harsh environments and extended reliability.
80 A maximum continuous collector current. 1200 V maximum collector emitter voltage. TO-247 package for through-hole installation. Low gate charge and saturation voltage of 2.15 V. RoHS compliant for environmental safety.
Ideal for industrial power conversion, motor drives, and high-speed switching in manufacturing and energy sectors. Explore more power semiconductors on EnvMart to support a wide range of electronic and industrial automation solutions.
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Frequently Asked Questions
The maximum continuous collector current for this IGBT is 80 A.
The maximum collector emitter voltage rating is 1200 V.
It has a maximum power dissipation capability of 5 kW.
The dimensions of the TO-247 package are 41.2 mm in length, 15.9 mm in width, and 5.1 mm in height.
The operating temperature range is from -40°C to 175°C.
This IGBT supports through-hole mounting.
Yes, it features a soft, fast recovery anti-parallel diode for efficient switching.
The maximum gate emitter voltage is 25 V.
The maximum collector emitter saturation voltage is 2.15 V.
Yes, this IGBT is RoHS compliant for environmental safety.
It is designed for industrial power conversion, motor drives, and high-speed switching in manufacturing and energy sectors.
This IGBT has a pin count of 3.
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