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| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 21.1mm |
| Length | 16.13mm |
| Model | IPZ65R065C7XKSA1 |
| Width | 5.21mm |
| Mount Type | Surface |
| Series | CoolMOS |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 4 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 33A |
| Maximum Drain Source Voltage Vds | 700V |
| Maximum Drain Source Resistance Rds | 65mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 171W |
| Typical Gate Charge Qg @ Vgs | 65nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 0.9V |
Infineon IPZ65R065C7XKSA1 CoolMOS Type N-Channel MOSFET is a high-performance semiconductor device designed for efficient power switching applications. It features a 4-pin TO-247 surface mount package optimized for power electronics where high current and voltage ratings are required.
This MOSFET provides a maximum continuous drain current of 33 A and a maximum drain-source voltage of 700 V, making it suitable for applications such as power supplies, converters, and inverters in industrial environments. The CoolMOS technology incorporated in this device ensures better efficiency by decreasing conduction and switching losses, highlighted by its excellent figure of merit in RDS(on) and gate charge.
The device supports an enhancement mode channel with a maximum gate-source voltage rating of ±20 V and low typical forward voltage of 0.9 V, which enhances its switching speed and efficiency. Its rugged construction delivers a minimum operating temperature of -55°C ensuring reliability in harsh conditions. The package dimensions provide ease of mounting and integration into a variety of PCB layouts.
The MOSFET's specifications, such as a maximum power dissipation of 171 W and a low on-resistance of 65 milliohms, allow system designers to optimize thermal performance and efficiency. It is free from halogens and compliant with multiple environmental standards.
Apart from industrial and commercial use, this MOSFET is ideal for applications in HVAC systems, manufacturing machinery, and automotive electronics requiring robust switching power devices.
This MOSFET features a 4-pin TO-247 package for surface mounting. It incorporates advanced CoolMOS technology for enhanced efficiency and reduced switching losses. The device operates up to a maximum power dissipation of 171 W.
It supports a maximum gate-source voltage of 20 V and typical gate charge of 65 nC. Designed for rugged operation with minimum operating temperature of -55°C. The maximum drain-source on-resistance is 65 milliohms, enabling lower conduction losses.
Packaged in a halogen-free mold compound and meeting environmental compliance requirements. Suitable for industrial, power supply, and electronic applications that require efficient switching components. Explore the Infineon range on EnvMart and find reliable components for your electronic circuit needs.
Explore more products in our Discrete Semiconductor category.
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