Previous
Next
Share
Free Delivery in India | Lowest Global Shipping Charges
24/7 Customer Support
24/7 Customer Support

Shop with confidence knowing that our 24/7 Customer Support is always available to assist with any inquiries

24/7 Customer Support
Save up to 28% with GST Input

Avail maximum benefits from input tax mechanism on all your Business Invoices. Get GST Invoices on your business purchases. And 0% Taxes on all worldwide deliveries

Lowest Price Challenge
# Lowest Price Challenge

If you find this product anywhere at lower cost than us. Call us and we will not only match the price but also give a complimentary coupon

Lowest Price Challenge
100% Original Products

Shop with assurance, as each product we offer is 100% original, ensuring quality and authenticity with every purchase

Infineon CoolMOS Type N-Channel MOSFET 33 A 700 V Enhancement 4-Pin TO-247 IPZ65R065C7XKSA1

Category Discrete Semiconductor Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Height 21.1mm
Length 16.13mm
Model IPZ65R065C7XKSA1
Width 5.21mm
Mount Type Surface
Series CoolMOS
Package Type TO-247
Minimum Operating Temperature -55°C
Pin Count 4
Channel Type Type N
Maximum Continuous Drain Current Id 33A
Maximum Drain Source Voltage Vds 700V
Maximum Drain Source Resistance Rds 65mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 171W
Typical Gate Charge Qg @ Vgs 65nC
Maximum Gate Source Voltage Vgs 20V
Forward Voltage Vf 0.9V

Key Features

  • This MOSFET features a 4-pin TO-247 package for surface mounting.
  • It incorporates advanced CoolMOS technology for enhanced efficiency and reduced switching losses.
  • The device operates up to a maximum power dissipation of 171 W.
  • It supports a maximum gate-source voltage of 20 V and typical gate charge of 65 nC.
  • Designed for rugged operation with minimum operating temperature of -55°C.
  • The maximum drain-source on-resistance is 65 milliohms, enabling lower conduction losses.
  • Packaged in a halogen-free mold compound and meeting environmental compliance requirements.
  • Suitable for industrial, power supply, and electronic applications that require efficient switching components.

Product Description

Infineon IPZ65R065C7XKSA1 CoolMOS Type N-Channel MOSFET is a high-performance semiconductor device designed for efficient power switching applications. It features a 4-pin TO-247 surface mount package optimized for power electronics where high current and voltage ratings are required.

This MOSFET provides a maximum continuous drain current of 33 A and a maximum drain-source voltage of 700 V, making it suitable for applications such as power supplies, converters, and inverters in industrial environments. The CoolMOS technology incorporated in this device ensures better efficiency by decreasing conduction and switching losses, highlighted by its excellent figure of merit in RDS(on) and gate charge.

The device supports an enhancement mode channel with a maximum gate-source voltage rating of ±20 V and low typical forward voltage of 0.9 V, which enhances its switching speed and efficiency. Its rugged construction delivers a minimum operating temperature of -55°C ensuring reliability in harsh conditions. The package dimensions provide ease of mounting and integration into a variety of PCB layouts.

The MOSFET's specifications, such as a maximum power dissipation of 171 W and a low on-resistance of 65 milliohms, allow system designers to optimize thermal performance and efficiency. It is free from halogens and compliant with multiple environmental standards.

Apart from industrial and commercial use, this MOSFET is ideal for applications in HVAC systems, manufacturing machinery, and automotive electronics requiring robust switching power devices.

This MOSFET features a 4-pin TO-247 package for surface mounting. It incorporates advanced CoolMOS technology for enhanced efficiency and reduced switching losses. The device operates up to a maximum power dissipation of 171 W.

It supports a maximum gate-source voltage of 20 V and typical gate charge of 65 nC. Designed for rugged operation with minimum operating temperature of -55°C. The maximum drain-source on-resistance is 65 milliohms, enabling lower conduction losses.

Packaged in a halogen-free mold compound and meeting environmental compliance requirements. Suitable for industrial, power supply, and electronic applications that require efficient switching components. Explore the Infineon range on EnvMart and find reliable components for your electronic circuit needs.

Explore more products in our Discrete Semiconductor category.

Infineon CoolMOS Type N-Channel MOSFET 33 A 700 V Enhancement 4-Pin TO-247 IPZ65R065C7XKSA1
Looking to purchase in bulk?
  • Purchase item in bulk quantity
  • Get best price for your business

Comments (0)

No customer reviews for the moment.

Frequently Asked Questions

The maximum continuous drain current for this model is 33 A.

This MOSFET has a maximum drain-source voltage rating of 700 V.

It operates with a maximum power dissipation of 171 W.

The typical gate charge for this model is 65 nC.

It supports a maximum gate-source voltage of ±20 V.

The dimensions of the TO-247 package are 21.1 mm in height, 16.13 mm in length, and 5.21 mm in width.

This MOSFET is designed for operation at a minimum temperature of -55°C.

The maximum drain-source on-resistance is 65 milliohms.

It uses a Type N enhancement channel.

This model is suitable for industrial, power supply, and electronic applications requiring efficient switching components.

The forward voltage for this device is 0.9 V.

This MOSFET has a pin count of 4.

Related Products

Other Products from this brand

$8.33
$8.08 Save 3%
Tax included
Quantity
Delivery Time Delivered within 0-3 days
  • Global Payments 140+ CountriesGlobal Payments 140+ Countries
  • Global Shipping Fedex/UPS/DHL/Aramex/
BlueDart/Delhivery/DP WorldGlobal Shipping Fedex/UPS/DHL/Aramex/ BlueDart/Delhivery/DP World
  • 24/7 Customer Support Email/Chat/Telephonic Support24/7 Customer Support Email/Chat/Telephonic Support
$8.33
$8.08
Tax included